Diamond composite films for protective coatings on metals and method of formation

• US 5,645,900 A
• Filed: 10/25/1994
• Issued: 07/08/1997
• Est. Priority Date: 04/22/1993
• Status: Expired due to Fees

• Current Assignee: United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration
• Original Assignee: United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration
• Inventors: Shing, Yuh-han, Ong, Tiong P.
• Primary Examiner(s): Beck, Shrive
• Assistant Examiner(s): CHEN, BRET P
• Application Number:
  US08/328,947
• Time in Patent Office: 987 Days
• Field of Search: 427/571, 427/574, 427/577, 427/578, 427/255.7
• US Class Current: 427/571
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C23C 16/274 using microwave discharges
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/32 Carbides
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium

Abstract

Composite films consisting of diamond crystallites and hard amorphous films such as diamond-like carbon, titanium nitride, and titanium oxide are provided as protective coatings for metal substrates against extremely harsh environments. A composite layer having diamond crystallites and a hard amorphous film is affixed to a metal substrate via an interlayer including a bottom metal silicide film and a top silicon carbide film. The interlayer is formed either by depositing metal silicide and silicon carbide directly onto the metal substrate, or by first depositing an amorphous silicon film, then allowing top and bottom portions of the amorphous silicon to react during deposition of the diamond crystallites, to yield the desired interlayer structure.

Claims

1. A method for forming a structure of multiple diamond crystallite composites on a metal or carbon substrate within an electron cyclotron resonance microwave plasma chemical vapor deposition chamber, the method comprising:

a first step of reacting the substrate with silane and hydrogen to form a metal silicide on the substrate if the substrate is metal or reacting the substrate with silane, methane and hydrogen to form silicon carbide on the substrate if the substrate is carbon

a second step of depositing diamond crystallites onto the metal silicide or silicon carbide layer;

a third step of depositing an amorphous layer onto the diamond crystallites and onto exposed portions of the metal silicide or silicon carbide layer; and

repeating the first step through the third step at least one time, each iteration creating one diamond crystallite composite.

2. The method of claim 1, wherein the amorphous layer is selected from the group consisting of amorphous carbon;

titanium dioxide;

titanium nitride; and

titanium carbide.

3. A method for forming a structure of multiple diamond crystallite composites on a metal substrate within an electron cyclotron resonance microwave plasma chemical vapor deposition chamber , the steps of forming the structure comprising:

depositing an amorphous silicon film on a surface of the metal substrate by mixing hydrogen with silane at a temperature less than 100 degrees Celsius within the chamber;

heating the amorphous silicon to 800 degrees Celsius to form an interlayer in a bottom portion of the amorphous silicon film through a chemical reaction of the surface with the silicon film;

forming an interlayer of silicon carbide in a top portion of the amorphous silicon film through a chemical reaction of methane with the silicon film at about 800 degrees Celsius;

nucleating and depositing diamond crystallites on the silicon carbide interlayer by mixing methane and hydrogen at about 800 degrees Celsius;

depositing an amorphous layer of diamond-like carbon, titanium carbide, titanium dioxide pr titanium nitride onto the diamond crystallites and onto exposed portions of the silicon carbide interlayer; and

repeating the above steps at least one time, each iteration creating one diamond crystallite composite.

4. The method of claim 3, wherein the amorphous layer is selected from the group consisting of amorphous carbon;

titanium dioxide;

titanium nitride; and

titanium carbide.