Plasma cleaning method for removing residues in a plasma process chamber
First Claim
1. A plasma cleaning method for removing oxide residues in a plasma process chamber wherein substrates are processed, comprising steps of:
- introducing a cleaning gas comprising a fluorine-based gas into the plasma process chamber;
performing a plasma cleaning step by activating the cleaning gas and forming a plasma cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas for a time sufficient to remove oxide residues on the interior surfaces;
coating the interior surfaces with silicon dioxide, the coating step being carried out by introducing a coating gas mixture comprising a silicon-containing gas into the chamber, activating the coating gas mixture and forming a plasma coating gas, and contacting the interior surfaces with the plasma coating gas until the interior surfaces are coated with silicon dioxide; and
conditioning uncoated interior surfaces by introducing a conditioning gas comprising a hydrogen-containing gas into the chamber, contacting the interior surfaces with the conditioning gas in a non-plasma state for a time sufficient to remove fluorine from the interior surfaces.
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Accused Products
Abstract
A method for cleaning and conditioning a plasma processing chamber wherein oxide residues have been previously formed on interior surfaces of the chamber. The method includes introducing a cleaning gas including a fluorine-based gas into the chamber followed by performing a plasma cleaning step. The plasma cleaning step is performed by activating the cleaning gas mixture and forming a plasma cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas and removing oxide residues on the interior surfaces. The cleaning step is followed by coating the interior surfaces with silicon dioxide to adhere loose particles to the interior surfaces and a conditioning step wherein uncoated interior surfaces are treated to remove fluorine therefrom. An advantage of the cleaning and conditioning method is that it is not necessary to open the chamber. Also, it is possible to remove oxide residues during the cleaning step and remove fluorine remaining after the cleaning step during the conditioning step. The conditioning step is carried out by introducing a hydrogen-containing gas into the chamber as a purge gas or the chamber can be pressurized by the hydrogen-containing gas followed by evacuating the chamber.
180 Citations
23 Claims
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1. A plasma cleaning method for removing oxide residues in a plasma process chamber wherein substrates are processed, comprising steps of:
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introducing a cleaning gas comprising a fluorine-based gas into the plasma process chamber; performing a plasma cleaning step by activating the cleaning gas and forming a plasma cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas for a time sufficient to remove oxide residues on the interior surfaces; coating the interior surfaces with silicon dioxide, the coating step being carried out by introducing a coating gas mixture comprising a silicon-containing gas into the chamber, activating the coating gas mixture and forming a plasma coating gas, and contacting the interior surfaces with the plasma coating gas until the interior surfaces are coated with silicon dioxide; and conditioning uncoated interior surfaces by introducing a conditioning gas comprising a hydrogen-containing gas into the chamber, contacting the interior surfaces with the conditioning gas in a non-plasma state for a time sufficient to remove fluorine from the interior surfaces. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A plasma cleaning method for removing oxide residues in a plasma process chamber wherein substrates are processed, comprising steps of:
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introducing a cleaning gas comprising a fluorine-based gas into the plasma process chamber; performing a plasma cleaning step by activating the cleaning gas and forming a plasma cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas for a time sufficient to remove oxide residues on the interior surfaces; coating the interior surfaces with silicon dioxide, the coating step being carried out by introducing a coating gas mixture comprising a silicon-containing gas into the chamber, activating the coating gas mixture and forming a plasma coating gas, and contacting the interior surfaces with the plasma coating gas until the interior surfaces are coated with silicon dioxide;
the coating gas comprising SiH4, O2 and Ar andconditioning uncoated interior surfaces by introducing a conditioning gas comprising a hydrogen-containing gas into the chamber, contacting the interior surfaces with the conditioning gas in a non-plasma state for a time sufficient to remove fluorine from the interior surfaces. - View Dependent Claims (22)
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23. A plasma cleaning method for removing oxide residues in a plasma process chamber wherein substrates are processed, comprising steps of:
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introducing a cleaning gas comprising a fluorine-based gas into the plasma process chamber; performing a plasma cleaning step by activating the cleaning gas and forming a plasma cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas for a time sufficient to remove oxide residues on the interior surfaces; coating the interior surfaces with silicon dioxide, the coating step being carried out by introducing a coating gas mixture comprising a silicon-containing gas into the chamber, activating the coating gas mixture and forming a plasma coating gas, and contacting the interior surfaces with the plasma coating gas until the interior surfaces are coated with silicon dioxide; conditioning uncoated interior surfaces by introducing a conditioning gas comprising a hydrogen-containing gas into the chamber, contacting the interior surfaces with the conditioning gas in a non-plasma state for a time sufficient to remove fluorine from the interior surfaces; and the chamber being located in an ECR reactor and including water-cooled aluminum chamber walls and at least one water-cooled aluminum component maintained at a temperature of less than 100°
C. during the plasma cleaning step, the component being coated with a silicon dioxide coating which traps Al and F in the coating.
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Specification