Micromachined hinge having an integral torsion sensor

• US 5,648,618 A
• Filed: 01/31/1996
• Issued: 07/15/1997
• Est. Priority Date: 10/18/1993
• Status: Expired due to Term

• Current Assignee: Rockstar Consortium US LP (Rockstar Consortium Inc.)
• Original Assignee: Armand P. Neukermans
• Inventors: Neukermans, Armand P., Slater, Timothy G.
• Primary Examiner(s): NOT, DEFINED
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US08/595,042
• Time in Patent Office: 531 Days
• Field of Search: 73/504.02, 73/504.12, 73/504.14, 73/504.15, 73/510, 73/511, 73/514.16, 73/514.33, 73/514.34, 73/514.35, 73/514.36 , 73/862.08, 73/862.381
• US Class Current: 73/862.08
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01P 15/132 with electromagnetic counterbalancing means
• CPC Class Codes: G01P 2015/0831 the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
• CPC Class Codes: G01P 2015/0837 the mass being suspended so as to only allow movement perpendicular to the plane of the substrate, i.e. z-axis sensor
• CPC Class Codes: G02B 26/0833 the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD G02B26/0825 takes precedence; micromechanical devices in general B81B
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: G02B 26/085 the reflecting means being moved or deformed by electromagnetic means
• CPC Class Codes: G02B 26/0858 the reflecting means being moved or deformed by piezoelectric means
• CPC Class Codes: G02B 26/101 with both horizontal and vertical deflecting means, e.g. raster or XY scanners colour television using laser beams scanning a display screen H04N9/3129

Abstract

An elongated micromachined silicon hinge includes an integral four-terminal piezo voltage torsion sensor. The micromachined hinge is disposed between masses that are located at opposite ends of the hinge, and that are fabricated integrally with the hinge by micromachining. Concurrent application of a torsional force to the hinge, by rotation of the masses about the hinge'"'"'s longitudinal axis, and an electric current through the hinge'"'"'s silicon, generates a voltage that appears across a pair of voltage sensing electrodes.

Claims

1. A silicon micromachined hinge that includes an integral torsion sensor, said silicon micromachined hinge comprising:

an elongated, single crystal silicon, micromachined bar having a length and a thickness, a major axis disposed along the length of said bar, and major surfaces that are disposed on opposite sides of said bar, that span between opposed ends of said bar, and to which are secured masses that are fabricated integrally with said bar by micromachining, said masses being capable of rotationally twisting said bar in a restorable manner about the major axis;

a four-terminal piezo voltage sensor for sensing torsion in said bar, said four-terminal piezo voltage sensor including;

at least two spaced-apart current electrodes disposed on a first of the major surfaces of said bar for making ohmic contact to an adjacent layer of silicon, said current electrodes being adapted for transmitting an electric current through the silicon; and

at least two spaced-apart voltage sensing electrodes disposed on the first of the major surfaces of said bar along a line generally perpendicular to electric current flow through the silicon between the current electrodes;

whereby upon application of a torsional force to said bar, by rotation of the masses about the major axis of said bar, concurrently with transmission of electric current between the current electrodes through the adjacent layer of silicon, a voltage, generated by the silicon in response to concurrent application of the torsional force and the electric current flow, appears across the voltage sensing electrodes.

2. The silicon micromachined hinge of claim 1 wherein said current electrodes are elongated, having a length oriented generally perpendicular to the major axis.

3. The silicon micromachined hinge of claim 1 wherein said current electrodes are elongated, having a length oriented generally parallel to the major axis.

4. The silicon micromachined hinge of claim 1 further comprising electrical leads connected respectively to each of the current electrodes and to each of the voltage electrodes, said electrical leads being electrically insulated from the silicon and from each other.

5. The silicon micromachined hinge of claim 4 wherein the silicon has both a (100) crystallographic direction and a (110) crystallographic direction, the major axis of said bar being aligned in either the (100) crystallographic direction or in the (110) crystallographic direction of the silicon.

6. The silicon micromachined hinge of claim 1 wherein said bar further includes piezo resistive means for sensing longitudinal and bending stresses in said bar.

7. The silicon micromachined hinge of claim 1 further comprising means for applying an electric current to the two spaced-apart current electrodes, and means for measuring voltage appearing across the two spaced-apart voltage sensing electrodes.

8. The silicon micromachined hinge of claim 7 wherein the means for applying current across the two spaced-apart current electrodes applies an alternating current to the two spaced-apart current electrodes.

9. The silicon micromachined hinge of claim 8 wherein the alternating current applied to the current electrodes has a frequency higher than the resonant frequency exhibited by said bar in combination with the masses secured to the opposed ends of said bar.

10. The silicon micromachined hinge of claim 1 wherein the layer of silicon of said bar immediately adjacent to the spaced-apart current electrodes and the voltage sensing electrodes is processed to restrict the electric current to a depth less than or equal to one-half the thickness of said bar.

11. The silicon micromachined hinge of claim 10 wherein the depth of the electric current is restricted to less than or equal to one-half the thickness of said bar by a junction isolation region formed in the layer of silicon adjacent to the current electrodes.

12. The silicon micromachined hinge of claim 10 wherein the depth of the electric current is restricted to less than or equal to one-half the thickness of said bar by heavily doping the layer of silicon of said bar adjacent to the current electrodes.

13. The silicon micromachined hinge of claim 10 wherein the depth of the electric current is restricted to a few microns immediately adjacent to the first of the major surfaces upon which are disposed the spaced-apart current electrodes and voltage sensing electrodes.

14. The silicon micromachined hinge of claim 1 wherein the silicon has both a (100) crystallographic direction and a (110) crystallographic direction, the major axis of said bar being aligned in either the (100) crystallographic direction or in the (110) crystallographic direction of the silicon.