Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile
First Claim
1. A lateral thin-film Silicon-On-Insulator (SOI) device comprising a semiconductor substrate, a thin buried oxide insulating layer on said substrate, and a lateral semiconductor device provided in a thin semiconductor film on said thin buried oxide, said thin semiconductor film comprising a first region of a first conductivity type, a second region of a second conductivity type opposite to that of the first and spaced apart from said first region by a lateral drift region of said second conductivity type having a substantially linear lateral doping profile, a top oxide insulating layer over said thin semiconductor film and having a substantially linearly-graded portion over a major portion of said lateral drift region which increases in thickness from adjacent said first region to adjacent said second region, and a conductive field plate on at least said linearly-graded portion of said top oxide insulating layer.
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Abstract
A lateral thin-film silicon-on-insulator (SOI) device includes a lateral semiconductor device such as a diode or MOSFET provided in a thin semiconductor film on a thin buried oxide. The lateral semiconductor device structure includes at least two semiconductor regions separated by a lateral drift region. By providing a substantially linear lateral doping profile in the lateral drift region, and by providing a conductive field plate on a linearly-graded top oxide insulating layer, a device structure is obtained in which conduction losses can be reduced without reducing breakdown voltage.
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7 Claims
- 1. A lateral thin-film Silicon-On-Insulator (SOI) device comprising a semiconductor substrate, a thin buried oxide insulating layer on said substrate, and a lateral semiconductor device provided in a thin semiconductor film on said thin buried oxide, said thin semiconductor film comprising a first region of a first conductivity type, a second region of a second conductivity type opposite to that of the first and spaced apart from said first region by a lateral drift region of said second conductivity type having a substantially linear lateral doping profile, a top oxide insulating layer over said thin semiconductor film and having a substantially linearly-graded portion over a major portion of said lateral drift region which increases in thickness from adjacent said first region to adjacent said second region, and a conductive field plate on at least said linearly-graded portion of said top oxide insulating layer.
Specification