Layer member forming method

• US 5,650,013 A
• Filed: 11/30/1994
• Issued: 07/22/1997
• Est. Priority Date: 11/26/1984
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): CHANG, JONI YUK YING
• Application Number:
  US08/351,140
• Time in Patent Office: 965 Days
• Field of Search: 118/723 E, 118/723 MP, 118/728, 118/723 R, 156/345, 134/1.2
• US Class Current: 118/723.0MP
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/482 using incoherent light, UV to IR, e.g. lamps
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

A chemical vapor reaction processing apparatus including a reaction chamber; a power source; a source of a reactive film forming gas; a device for inputting the reactive film forming gas into the chamber; a pair of electrodes connected to the power source, at least a portion of the pair of electrodes being provided in the reaction chamber; a power source for supplying a first electric power into the reaction chamber through the pair of electrodes to generate a plasma of the reactive film forming gas in the chamber for providing a plasma CVD deposition of the reactive film forming gas on a surface; a source of a reactive cleaning gas; a device for inputting the reactive cleaning gas into the chamber where the power source supplies a second electric power into the reaction chamber through the pair of electrodes to generate a plasma of the reactive cleaning gas in the chamber so that an inner wall of the chamber is cleaned by the plasma. The reactive cleaning gas may be a (a) fluoride cleaning gas or (b) a fluoride cleaning gas and a hydrogen cleaning gas.

Claims

1. A chemical vapor reaction processing apparatus comprising:

a reaction chamber;

a power source

a source of a reactive film forming gas;

means for inputting said reactive film forming gas into said chamber;

a pair of electrodes connected to said power source, at least a portion of said pair of electrodes being provided in said reaction chamber;

means for causing said power source to supply a first electric power into said reaction chamber through said pair of electrodes to generate a first plasma of said reactive film forming gas in said chamber for providing a plasma CVD deposition of said reactive film forming gas on a substrate disposed at one of said pair of electrodes;

a source of a reactive cleaning gas;

means for inputting said reactive cleaning gas into said chamber through the other one of said pair of electrodes; and

means for causing said power source to supply a second electric power into said reaction chamber through said pair of electrodes to generate a second plasma of said reactive cleaning gas in said chamber,

wherein the inside of said chamber has unnecessary layers removed therefrom by said second plasma.

2. The apparatus of claim 1 wherein said electrodes are cleaned by said plasma.

5. The apparatus of claim 1 wherein the cleaning by said plasma and plasma chemical vapor deposition are carried out by said electrodes.

6. The apparatus of claim 1 wherein a substrate holder is used as one of said electrodes.

7. The apparatus of claim 1 further comprising means for holding at least one substrate in said plasma wherein the cleaning is carried out after removing said substrate outside said reaction chamber.

3. A chemical vapor reaction processing apparatus comprising:

a reaction chamber;

a power source;

a source of a reactive film forming gas;

means for inputting said reactive film forming gas into said chamber;

a pair of electrodes connected to said power source, at least a portion of said pair of electrodes being provided in said reaction chamber;

means for causing said power source to supply a first electric power into said reaction chamber through said pair of electrodes to generate a first plasma of said first reactive film forming gas in said chamber for providing a plasma CVD deposition of said first reactive film forming gas on a substrate disposed at one of said pair of electrodes;

a source of a hydrogen cleaning gas;

a source of a nitrogen fluoride cleaning gas;

means for inputting said nitrogen fluoride cleaning gas into said chamber;

means for inputting said hydrogen cleaning gas into said chamber;

means for causing said power source to supply a second electric power into said reaction chamber through said pair of electrodes to generate a plasma of said nitrogen fluoride gas and said hydrogen gas in said chamber,

wherein the inside of said chamber has unnecessary layers removed therefrom by said plasma of said nitrogen fluoride gas and subsequently cleaned by said plasma of said hydrogen gas.

8. The apparatus of claim 3 wherein the cleaning by said plasma of said fluoride gas and the cleaning by said plasma of said hydrogen gas and plasma chemical vapor deposition are carried out by said electrodes.

9. The apparatus of claim 3 wherein a substrate holder is used as one of said electrodes.

4. A chemical vapor reaction processing apparatus comprising:

a reaction chamber;

a power source;

a source of a reactive film forming gas;

means for inputting said reactive film forming gas into said chamber;

a pair of electrodes connected to a power source, at least a portion of said pair of electrodes being provided in said reaction chamber;

means for causing said power source to supply a first electric power into said reaction chamber through said pair of electrodes to generate a first plasma of said first reactive film forming gas in said chamber for providing a plasma CVD deposition of said first reactive film forming gas on a substrate disposed at one of said pair of electrodes;

a source of a nitrogen fluoride cleaning gas;

means for inputting said nitrogen fluoride cleaning gas into said chamber; and

a power source for supplying an electric power into said reaction chamber through said pair of electrodes to generate a plasma of said nitrogen fluoride gas in said chamber by said electrodes,

wherein the inside of said chamber has unnecessary layers removed therefrom by said plasma.

10. The apparatus of claim 4 wherein the cleaning by said plasma and plasma chemical vapor deposition are carried out by said electrodes.

11. The apparatus of claim 4 wherein a substrate holder is used as one of said electrodes.