Variable cell size collimator

• US 5,650,052 A
• Filed: 10/04/1995
• Issued: 07/22/1997
• Est. Priority Date: 10/04/1995
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Murphy, William J., West, Robert S., Edelstein, Sergio, Khurana, Nitin, Van Gogh, James, Parkhe, Vijay, Miyamoto, Keiji, Mosely, Roderick C.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US08/539,177
• Time in Patent Office: 657 Days
• Field of Search: 204/192.12, 204/298.11
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: H01J 2237/3327 Coating high aspect ratio workpieces
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H01J 37/3447 Collimators, shutters, apertures

Abstract

Sputtering apparatus and method suitable for forming a step coating on a workpiece. A workpiece is supported in a chamber, particles are emitted from a sputtering source, and the particles are passed through a collimating filter having a plurality of transmissive cells positioned between the sputtering source and the workpiece to limit the angles at which the particles can be deposited onto the workpiece. The collimating filter varies in height from a center portion to an outer portion while preferably maintaining a constant cell aspect ratio.

Claims

1. An apparatus for sputter depositing a film on a workpiece, comprising:

a) a chamber enclosing a sputtering source and a substrate support member, the substrate support member having a generally planar workpiece receiving surface disposed generally parallel to the sputtering surface of the sputtering source; and

b) a collimator mounted between the sputtering source and the workpiece having a plurality of particle transmissive cells therein, the transmissive cells being variably spaced from the sputtering source and allowing sputtered material to pass therethrough in a direction toward the substrate when the collimator is mounted below the sputtering source;

c) wherein the collimator has upper and lower surfaces, at least one of said surfaces being a convex surface or a concave surface.

2. The apparatus of claim 1, wherein the collimator has a concave lower surface thereon.

3. The apparatus of claim 2, wherein the transmissive cells vary in height from a center portion of the collimator to an outer portion of the collimator.

4. The apparatus of claim 3, wherein the transmissive cells vary in width from the center portion to the outer portion.

5. The apparatus of claim 4, wherein the transmissive cells increase in width from the center portion to the outer portion.

6. The apparatus of claim 5, wherein the aspect ratio of the each cell is equal.

7. The apparatus of claim 2, wherein the collimator has a convex upper surface.

8. The apparatus of claim 1, wherein the collimator has a planar lower surface.

10. The method of claim 7, wherein the collimator has a convex upper surface and a concave lower surface.

9. A method of forming a deposition layer on a substrate, comprising the steps of:

a) providing a sputter deposition chamber having at least a target and a substrate therein;

b) sputtering the target to provide a flux of target particles for deposition on the substrate; and

c) placing a collimator having a plurality of particle transmissive cells therein intermediate the substrate and the target, the collimator having upper and lower surfaces, at least one of said surfaces being a convex surface or a concave surface such that a portion of the target particles sputtered from the target pass through the apertures provided in the collimator and deposit on the substrate.

11. A physical vapor deposition device for depositing material onto a semi-conductor workpiece, comprising:

a) a chamber;

b) vacuum means for evacuating the chamber of air;

c) a target of material to be deposited onto the workpiece mounted in the chamber;

d) means for sputtering the target material;

e) a workpiece support member located in the chamber for holding the workpiece; and

f) a collimator mounted between the target and the workpiece, the collimator comprising a plate of electrically non-conductive material having a plurality of passages therein and having upper and lower surfaces, at least one of said surfaces being a convex surface or a concave surface, the passages sized to account for greater material buildup in the center of the collimator relative to the outer edge throughout the life of the target.

12. The device of claim 11, wherein the collimator has a convex upper surface and a concave lower surface.

13. A filter member for use in a semiconductor processing apparatus, comprising:

a) a filter plate having opposed major surfaces, at least one of said surfaces being a convex surface or a concave surface; and

b) the plate comprising a plurality of cells defined by a plurality of cell walls generally perpendicular to said opposed major surfaces.

14. The filter member of claim 13, wherein the plate has a convex surface.

15. The filter member of claim 13, wherein the plate has a concave surface.

16. The filter member of claim 15, wherein the plate has a convex upper surface and a concave lower surface.

17. An apparatus for sputter depositing a film on a workpiece, comprising:

a) a chamber enclosing a sputtering source and a substrate support member, the substrate support member having a generally planar workpiece receiving surface disposed generally parallel to the sputtering surface of the sputtering source; and

b) a collimator mounted between the sputtering source and the workpiece and having a plurality of particle transmissive cells therein, the transmissive cells being variably spaced from the sputtering source and allowing sputtered material to pass therethrough in a direction toward the substrate when the collimator is mounted below the sputtering source;

c) wherein the collimator has a concave upper surface and a planar lower surface.

18. An apparatus for sputter depositing a film on a workpiece, comprising:

a) a chamber enclosing a sputtering source and a substrate support member, the substrate support member having a generally planar workpiece receiving surface disposed generally parallel to the sputtering surface of the sputtering source; and

b) a collimator mounted between the sputtering source and the workpiece and having a plurality of particle transmissive cells therein, the transmissive cells being variably spaced from the sputtering source and allowing sputtered material to pass therethrough in a direction toward the substrate when the collimator is mounted below the sputtering source;

c) wherein the collimator has an upper and lower surface;

d) wherein the transmissive cells vary in height from a center portion of the collimator to an outer portion of the collimator; and

e) wherein the transmissive cells vary in width from the center portion to the outer portion.

19. The apparatus of claim 18, wherein the transmissive cells increase in width from the center portion to the outer portion.

20. The apparatus of claim 19, wherein the aspect ratio of each transmissive cell is equal.

21. An apparatus for sputtering depositing a film on a workpiece, comprising:

a) a chamber enclosed a sputtering source and a substrate support member, the substrate support member having a generally planar workpiece receiving surface disposed generally parallel to the sputtering surface of the sputtering source; and

b) a collimator mounted between the sputtering source and the workpiece and having a plurality of particle transmissive cells therein, the transmissive cells being variably spaced from the sputtering source and allowing sputtered material to pass therethrough in a direction toward the substrate when the collimator is mounted below the sputtering source;

c) wherein the collimator has an upper and lower surface; and

d) wherein the upper surface presents a convex surface adjacent the sputtering source and the lower surface presents a concave surface adjacent the workpiece.

22. The apparatus of claim 21, wherein the cell height is uniform.