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Method for forming thin film transistor

  • US 5,650,338 A
  • Filed: 03/23/1994
  • Issued: 07/22/1997
  • Est. Priority Date: 08/26/1991
  • Status: Expired due to Fees
First Claim
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1. A method for forming a thin film transistor, comprising the steps of:

  • forming a non-single crystalline semiconductor island region on a substrate;

    forming an insulating film covering the non-single crystalline semiconductor island region;

    forming a gate electrode comprising an anode-oxidizable material on the insulating film to obtain a first laminate;

    dipping the first laminate in an electrolytic solution and applying an electric current to the gate electrode as a positive electrode to form an anodic oxide film on a surface of the gate electrode;

    introducing an impurity into the non-single crystalline semiconductor island region using the gate electrode and the anodic oxide film as a mask to obtain a second laminate; and

    dipping the second laminate in the electrolytic solution and applying a positive or negative voltage to the gate electrode.

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