Method of making asymmetric low power MOS devices

• US 5,650,340 A
• Filed: 05/31/1995
• Issued: 07/22/1997
• Est. Priority Date: 08/18/1994
• Status: Expired due to Term

• Current Assignee: Sun Microsystems Incorporated (Oracle Corporation)
• Original Assignee: Sun Microsystems Incorporated (Oracle Corporation)
• Inventors: Burr, James B., Brassington, Michael P.
• Primary Examiner(s): Bowers, Jr., Charles L.
• Assistant Examiner(s): Radomsky, Leon
• Application Number:
  US08/456,048
• Time in Patent Office: 783 Days
• Field of Search: 437/29, 437/30, 437/35, 437/40 DM, 437/40 AS, 437/41 DM, 437/41 AS, 437/44
• US Class Current: 438/286
• CPC Class Codes: H01L 29/1045 the doping structure being parallel to the channel length, e.g. DMOS like
• CPC Class Codes: H01L 29/1083 with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
• CPC Class Codes: H01L 29/1087 characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers
• CPC Class Codes: H01L 29/66659 with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
• CPC Class Codes: H01L 29/7832 the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/7835 with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

Low threshold voltage MOS devices having asymmetric halo implants are disclosed herein. An asymmetric halo implant provides a pocket region located under a device'"'"'s source or drain near where the source (or drain) edge abuts the device'"'"'s channel region. The pocket region has the same conductivity type as the device'"'"'s bulk (albeit at a higher dopant concentration) and, of course, the opposite conductivity type as the device'"'"'s source and drain. Only the source or drain, not both, have the primary pocket region. An asymmetric halo device behaves like two pseudo-MOS devices in series: a "source FET" and a "drain FET." If the pocket implant is located under the source, the source FET will have a higher threshold voltage and a much shorter effective channel length than the drain FET.

Claims

1. A method of forming an asymmetric MOS transistor on a semiconductor substrate, the method comprising the following steps:

forming a bulk region having a first conductivity type;

forming a gate over a portion of said bulk region defining a channel region, wherein the conditions employed to form the gate and the channel region are such that the MOS transistor has an absolute threshold voltage between about -150 and about +150 millivolts;

performing an asymmetric halo implant which implants dopant atoms of said first conductivity type to form a pocket region on a first side of said channel region but not on a second side of said channel region; and

forming source and drain regions of a second conductivity type separated by the channel region, wherein the pocket region of the first conductivity type abuts at least a portion of one of said source and drain regions and proximate said channel region effectively creating two pseudo-metal oxide semiconductor devices connected in series, a first pseudo device disposed away from the pocket region and having a first threshold voltage and a second pseudo device located proximate the pocket region and having a second threshold voltage which is higher in magnitude than the first threshold voltage, wherein the second pseudo device has a second effective channel length that is shorter than a first effective channel length of the first pseudo device and a substantial number of carriers can be transported across the channel of said second pseudo device ballistically.

2. The method of claim 1 wherein the step of performing an asymmetric halo implant is conducted at an implant energy of between about 50 and 70 keV and at a dose of between about 5×

10¹² to 5×

10¹³ cm^-2.

3. The method of claim 1 wherein the step of forming source and drain regions includes a step of conducting an implant of said second conductivity type at an implant energy of between about 20 and 60 keV and at a dose of between about 10¹³ -10¹⁴ cm^-2.

4. The method of claim 3 further comprising the following steps:

forming a spacer on the sides of said gate; and

conducting a second implant of said second conductivity type in the source and drain regions and on either side the spacer, wherein said second implant is conducted at an implant energy of between about 50-100 keV and at a dose of between about 1×

10¹⁵ -5×

10¹⁵ cm^-2.

5. The method of claim 4 wherein the step of performing an asymmetric halo implant is conducted before said step of forming a spacer.

6. The method of claim 1 wherein the step of performing an asymmetric halo implant forms a pocket region having an average dopant concentration of at least about 1×

10¹⁶ atoms/cm³.

7. The method of claim 1 wherein the channel region includes a total dopant concentration of not greater than about 1×

10¹⁶ atoms/cm³.

8. The process of claim 1 wherein the first effective channel length is at most about 0.1 micrometers.

9. The process of claim 8 wherein the first effective channel length ranges from between about 200 to about 500 Angstroms.

10. A method of forming an asymmetric MOS transistor on a semiconductor substrate, the method comprising the following steps:

forming a bulk region having a first conductivity type;

forming a gate over a portion of said bulk region defining a channel region;

forming source and drain tip regions of a second conductivity type separated by the channel region;

forming a first spacer on the sides of said gate;

performing an asymmetric halo implant which implants dopant atoms of said first conductivity type to form a pocket region on a first side of said channel region but not on a second side of said channel region, wherein the step of performing the asymmetric halo implant comes after the step of forming the first spacer;

forming a second spacer on the sides of the first spacer; and

forming source and drain plug regions by conducting a second implant of said second conductivity type on either side the second spacer, wherein the pocket region abuts at least a portion of one of said source and drain plug regions and proximate said channel region effectively creating two pseudo-metal oxide semiconductor devices connected in series, a first pseudo device disposed away from the pocket region and having a first threshold voltage and a second pseudo device located proximate the pocket region and having a second threshold voltage which is higher in magnitude than the first threshold voltage, the second pseudo device has a second effective channel length that is shorter than a first effective channel length of the first pseudo device and a substantial number of carriers can be transported across the channel of said second pseudo device ballistically.

11. The method of claim 10 wherein the step of performing an asymmetric halo implant is conducted at an implant energy of between about 50 and 70 keV and at a dose of between about 5×

10¹² to 5×

10¹³ cm^-2.

12. The method of claim 10 wherein the step of performing an asymmetric halo implant forms a pocket region having an average dopant concentration of at least about 1×

10¹⁶ atoms/cm³.

13. The method of claim 10 wherein the channel region includes a total dopant concentration of not greater than about 1×

10¹⁶ atoms/cm³.

14. The method of claim 10 wherein the step of forming source and drain tip regions includes a step of conducting an implant of said second conductivity type at an implant energy of between about 20 and 60 keV and at a dose of between about 10¹³ -10¹⁴ cm^-2.

15. The method of claim 10 wherein the step of forming source and drain plug regions is conducted by implanting at an implant energy of between about 50-100 keV and at a dose of between about 1×

10¹⁵ -5×

10¹⁵ cm^-2.