Infrared image pickup device

• US 5,650,622 A
• Filed: 06/05/1996
• Issued: 07/22/1997
• Est. Priority Date: 06/06/1995
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Takahashi, Susumu, Ookawa, Norio, Kaneta, Osamu, Ueno, Masashi
• Primary Examiner(s): FIELDS, CAROLYN
• Application Number:
  US08/658,799
• Time in Patent Office: 412 Days
• Field of Search: 250/332, 250/370.08, 250/370.15, 250/338.4
• US Class Current: 250/332
• CPC Class Codes: H04N 25/671 for non-uniformity detection or correction
• CPC Class Codes: H04N 5/33 Transforming infrared radiation cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20

Abstract

Circuitry for a bolometer-type image pickup device improves the signal-to-noise ratio and reduces variations of an output offset level due to temperature variations of the device. A clamp voltage is applied to an amplifier 18 via a clamping diode 36 connected thereto. This reduces a difference between an input voltage during an off-state of one of horizontal FET switches 9, 10, and an input voltage during the off-state of both horizontal FET switches 9, 10, thereby improving a signal-to-noise ratio by narrowing a frequency band of an external circuit. Further, a variable load resistor 43 whose resistance varies with temperature similarly to those of bolometers 1-4, a resistance of a pseudo resistor 44 which is substantially equal to a sum of conductive resistances of vertical FET switches 1, 14 and horizontal FET switches 9, 10, and a compensating diode 45 whose forward bias voltage varies with temperature similarly to those of pixel separating diodes 39-42 are connected in series between the horizontal FET switches 9, 10 and a bias current output terminal 12, thereby offsetting variations of an output offset level due to temperature variations.

Claims

1. An infrared image pickup device comprising:

(a) bolometers arranged two-dimensionally;

(b) vertical transistors disposed on respective columns;

(c) a vertical scanning circuit connected to first electrodes of the vertical transistors;

(d) horizontal transistors disposed on respective rows;

(e) a horizontal scanning circuit connected to first electrodes of the horizontal transistors;

(f) a first bias current terminal connected to terminals at one side of the bolometers via second electrodes and third electrodes of the vertical transistors;

(g) a second bias current terminal;

(h) a load resistor having one terminal connected to the second bias current terminal and the other terminal connected to terminals at the other side of the bolometers via second electrodes and third electrodes of the horizontal transistors;

(i) pixel separating diodes connected to the bolometers in series;

(j) an amplifier having an input terminal connected to a node between the horizontal transistors and the load resistor;

(k) an output terminal connected to an output of the amplifier;

(l) a clamp voltage input terminal;

(m) a clamping diode having one terminal connected to an input terminal of the amplifier and the other terminal connected to the clamp voltage input terminal; and

(n) a substrate for supporting the elements (a) to (m) thereon.

2. The infrared image pickup device according to claim 1, wherein

the first bias current terminal is a bias current output terminal,

the second bias current terminal is a bias current input terminal,

the bolometers have terminals at one side connected to anodes of the pixel separating diodes and terminals at the other side connected to the bias current input terminal via the horizontal transistors and the load resistor,

the pixel separating diodes have cathodes connected to the bias current output terminal via the vertical transistors, and

the clamping diode has an anode connected to an input terminal of the amplifier and a cathode connected to the clamp voltage input terminal.

3. The infrared image pickup device according to claim 1, wherein

the first bias current terminal is a bias current output terminal,

the second bias current terminal is a bias current input terminal,

the bolometers have terminals at one side connected to cathodes of the pixel separating diodes and terminals at the other side connected to the bias current output terminal via the vertical transistors,

the pixel separating diodes have anodes connected to the bias current input terminal via the horizontal transistors and the load resistor, and

the clamping diode has an anode connected to an input terminal of the amplifier and a cathode connected to the clamp voltage input terminal.

4. The infrared image pickup device according to claim 1, wherein

the first bias current terminal is a bias current input terminal,

the second bias current terminal is a bias current output terminal,

the bolometers have terminals at one side connected to anodes of the pixel separating diodes and terminals at the other side connected to the bias current input terminal via the vertical transistors,

the pixel separating diodes have cathodes connected to the bias current output terminal via the horizontal transistors and the load resistor, and

the clamping diode has a cathode connected to an input terminal of the amplifier and an anode connected to the clamp voltage input terminal.

5. The infrared image pickup device according to claim 1, wherein

the first bias current terminal is a bias current input terminal,

the second bias current terminal is a bias current output terminal,

the bolometers have terminals at one side connected to cathodes of the pixel separating diodes and terminals at the other side connected to the bias current output terminal via the horizontal transistors and the load resistor,

the pixel separating diodes have anodes connected to the bias current input terminal via the vertical transistors, and

the clamping diode has a cathode connected to an input terminal of the amplifier and an anode connected to the clamp voltage input terminal.

6. An infrared image pickup device comprising:

(a) bolometers arranged two-dimensionally;

(b) vertical transistors disposed on respective columns;

(c) a vertical scanning circuit connected to first electrodes of the vertical transistors;

(d) horizontal transistors disposed on respective rows;

(e) a horizontal scanning circuit connected to first electrodes of the horizontal transistors;

(f) a first bias current terminal connected to terminals at one side of the bolometers via second electrodes and third electrodes of the vertical transistors;

(g) a second bias current terminal;

(h) a load resistor including one terminal connected to the second bias current terminal and the other terminal connected to terminals at the other side of the bolometers via second electrodes and third electrodes of the horizontal transistors;

(i) pixel separating diodes connected to the bolometers in series;

(j) an amplifier having an input terminal connected to a node between the horizontal transistors and the load resistor;

(k) an output terminal connected to an output of the amplifier; and

(l) a substrate for supporting the elements (a) to (k) thereon,

wherein the load resistor has;

a variable load resistor whose resistance value varies with temperature similarly to resistance values of the bolometers;

a pseudo resistor whose resistance value is substantially equal to a sum of a conductive resistance of one of the vertical transistors and a conductive resistance of one of the horizontal transistors; and

a compensating diode whose forward bias voltage varies with temperature similarly to forward bias voltages of the pixel separating diodes.

7. The infrared image pickup device according to claim 6, wherein

the first bias current terminal is a bias current output terminal,

the second bias current terminal is a bias current input terminal,

the bolometers have terminals at one side connected to anodes of the pixel separating diodes and terminals at the other side connected to the bias current input terminal via the horizontal transistors and the load resistor,

the pixel separating diodes have cathodes connected to the bias current output terminal via the vertical transistors, and

the compensating diode is oriented such that the bias current flows from the bias current input terminal to the bias current output terminal.

8. The infrared image pickup device according to claim 6, wherein

the first bias current terminal is a bias current output terminal,

the second bias current terminal is a bias current input terminal,

the bolometers have terminals at one side connected to cathodes of the pixel separating diodes and terminals at the other side connected to the bias current output terminal via the vertical transistors,

the pixel separating diodes have anodes connected to the bias current input terminal via the horizontal transistors and the load resistor, and

the compensating diode is oriented such that the bias current flows from the bias current input terminal to the bias current output terminal.

9. The infrared image pickup device according to claim 6, wherein

the first bias current terminal is a bias current input terminal,

the second bias current terminal is a bias current output terminal,

the bolometers have terminals at one side connected to anodes of the pixel separating diodes and terminals at the other side connected to the bias current input terminal via the vertical transistors,

the pixel separating diodes have cathodes connected to the bias current output terminal via the horizontal transistors and the load resistor, and

the compensating diode is oriented such that the bias current flows from the bias current input terminal to the bias current output terminal.

10. The infrared image pickup device according to claim 6, wherein

the first bias current terminal is a bias current input terminal,

the second bias current terminal is a bias current output terminal,

the bolometers have terminals at one side connected to cathodes of the pixel separating diodes and terminals at the other side connected to the bias current output terminal via the horizontal transistors and the load resistor,

the pixel separating diodes have anodes connected to the bias current input terminal via the vertical transistors, and

the compensating diode is oriented such that the bias current flows from the bias current input terminal to the bias current output terminal.

11. An infrared image pickup device comprising:

(a) bolometers arranged two-dimensionally;

(b) vertical transistors disposed on respective columns;

(c) a vertical scanning circuit connected to first electrodes of the vertical transistors;

(d) horizontal transistors disposed on respective rows;

(e) a horizontal scanning circuit connected to first electrodes of the horizontal transistors;

(f) a first bias current terminal connected to terminals at one side of the bolometers via second electrodes and third electrodes of the vertical transistors;

(g) a second bias current terminal;

(h) a load resistor including one terminal connected to the second bias current terminal and the other terminal connected to terminals at the other side of the bolometers via second electrodes and third electrodes of the horizontal transistors;

(i) pixel separating diodes connected to the bolometers in series;

(j) an amplifier having an input terminal connected to a node between the horizontal transistors and the load resistor;

(k) an output terminal connected to an output of the amplifier; and

(l) a substrate for supporting the elements (a) to (k) thereon,

wherein the load resistor has;

a variable load resistor whose resistance value varies with temperature similarly to resistance values of the bolometers;

a compensating vertical transistor having a conductive resistance varying with temperature substantially similarly to a conductive resistance of the vertical transistors;

a terminal for controlling the compensating vertical transistor and being connected to a first electrode of the compensating vertical transistor;

a compensating horizontal transistor having a conductive resistance varying with temperature substantially similarly to a conductive resistance of the horizontal transistors;

a terminal for controlling the compensating horizontal transistor and being connected to a first electrode of the compensating horizontal transistor; and

a compensating diode whose forward bias voltage varies with temperature similarly to resistance values of the pixel separating diodes.

12. The infrared image pickup device according to claim 11, wherein

the first bias current terminal is a bias current output terminal,

the second bias current terminal is a bias current input terminal,

the bolometers have terminals at one side connected to anodes of the pixel separating diodes and terminals at the other side connected to the bias current input terminal via the horizontal transistors and the load resistor,

the pixel separating diodes have cathodes connected to the bias current output terminal via the vertical transistors, and

the compensating diode is oriented such that the bias current flows from the bias current input terminal to the bias current output terminal.

13. The infrared image pickup device according to claim 11, wherein

the first bias current terminal is a bias current output terminal,

the second bias current terminal is a bias current input terminal,

the bolometers have terminals at one side connected to cathodes of the pixel separating diodes and terminals at the other side connected to the bias current output terminal via the vertical transistors,

the pixel separating diodes have anodes connected to the bias current input terminal via the horizontal transistors and the load resistor, and

the compensating diode is oriented such that the bias current flows from the bias current input terminal to the bias current output terminal.

14. The infrared image pickup device according to claim 11, wherein

the first bias current terminal is a bias current input terminal,

the second bias current terminal is a bias current output terminal,

the bolometers have terminals at one side connected to anodes of the pixel separating diodes and terminals at the other side connected to the bias current input terminal via the vertical transistors,

the pixel separating diodes have cathodes connected to the bias current output terminal via the horizontal transistors and the load resistor, and

the compensating diode is oriented such that the bias current flows from the bias current input terminal to the bias current output terminal.

15. The infrared image pickup device according to claim 11, wherein

the first bias current terminal is a bias current input terminal,

the second bias current terminal is a bias current output terminal,

the bolometers have terminals at one side connected to cathodes of the pixel separating diodes and terminals at the other side connected to the bias current output terminal via the horizontal transistors and the load resistor,

the pixel separating diodes have anodes connected to the bias current input terminal via the vertical transistors, and

the compensating diode is oriented such that the bias current flows from the bias current input terminal to the bias current output terminal.