Photovoltaic oxide charge measurement probe technique

• US 5,650,731 A
• Filed: 12/12/1996
• Issued: 07/22/1997
• Est. Priority Date: 05/12/1995
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Verkuil, Roger Leonard, Yun, Bob Hong, Fung, Min-Su
• Primary Examiner(s): Nguyen, Vinh P.
• Application Number:
  US08/764,776
• Time in Patent Office: 222 Days
• Field of Search: 324/751, 324/752, 324/750, 324/719, 324/662, 324/761, 324/765, 324/73.1, 324/158.1, 324/71.3, 250/310, 250/311, 250/492, 356/400, 356/401, 257/48, 437/8
• US Class Current: 324/754.03
• CPC Class Codes: G01R 29/24 Arrangements for measuring quantities of charge
• CPC Class Codes: G01R 31/2831 Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates G01R31/318511 takes precedence; testing during manufacture H01L22/00
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An apparatus for measuring charge in an oxide layer overlying a silicon substrate containing very high density product chips characterized by thick oxides and high substrate doping levels in the field regions. A specially designed extremely thin conductive probe is pressed against the oxide layer whose charge is to be measured. A bias is applied to the probe for biasing the underlying silicon surface into accumulation or inversion. An intensity modulated light beam is focussed at the point of probe contact. The resulting amplitude modulated photovoltage is detected and applied to a computer to derive the value of the oxide charge therefrom.

Claims

1. Apparatus for measuring charge in an oxide layer overlying a silicon substrate, said apparatus comprising:

a solid, opaque, conductive probe pressed into contact with said oxide layer said probe having a tip,

focussed light beam means for illuminating the point of contact of said probe to said oxide layer from a direction to the side of said probe to minimize the effect of shadowing by said opaque probe,

modulating means coupled to said light beam means for intensity modulating said light to produce a modulated photovoltage within said substrate,

synchronized detector means coupled to said probe and to said modulating means for detecting said photovoltage, and

computing means coupled to receive said detected photovoltage to derive the value of said charge therefrom.

2. Apparatus as deflned in claim 1 wherein said tip is characterized by an inner contacting region having a first radius of curvature and an outer non-contacting region having a second radius of curvature, said first radius being greater than said second radius.

3. Apparatus as defined in claim 1 and further including direct current biasing means coupled to said probe for biasing said substrate into accumulation.

4. Apparatus as defined in claim 1 and further including direct current biasing means coupled to said probe for biasing said substrate surface into inversion.

5. Apparatus as defined in claim 1 wherein said modulating means intensity modulates said light in a sinusoidal fashion.

6. Apparatus as defined in claim 1 wherein said probe is a tungsten needle.

7. Apparatus as defined in claim 6 wherein the tip diameter of said needle is of the order of 15 microns.

8. Apparatus as defined in claim 1 wherein said oxide layer is about 1000 Angstroms thick.

9. Apparatus as defined in claim 1 wherein said substrate has a doping concentration of about 5E17 atoms/cm3.

10. Apparatus for measuring charge in an oxide layer overlying a silicon substrate said apparatus comprising:

a solid, opaque, conductive probe pressed into contact with said oxide layer, said probe being composed of a material selected from the group consisting of a wire and a needle, said probe having a tip with a tip diameter of said needle of the order of 15 microns,

focussed light beam means for illuminating the point of contact of said probe to said oxide layer from a direction to the side of said probe to minimize the effect of shadowing by said opaque probe,

modulating means coupled to said light beam means for intensity modulating said light to produce a modulated photovoltage within said substrate,

synchronized detector means coupled to said probe and to said modulating means for detecting said photovoltage, and

computing means coupled to receive said detected photovoltage to derive the value of said charge therefrom.

11. Apparatus as defined in claim 10 wherein said tip is characterized by an inner contacting region having a first radius of curvature and an outer non-contacting region having a second radius of curvature, said first radius being greater than said second radius.

12. Apparatus as defined in claim 10 and further including direct current biasing means coupled to said probe for biasing said substrate into accumulation.

13. Apparatus as defined in claim 10 and further Including direct current biasing means coupled to said probe for biasing said substrate surface into inversion.

14. Apparatus as defined in claim 10 wherein said modulating means intensity modulates said light in a sinusoidal fashion.

15. Apparatus as defined in claim 10 wherein said probe is a tungsten needle.

16. Apparatus as defined in claim 15 wherein the tip diameter of said needle is of the order of 15 microns.

17. Apparatus as defined in claim 10 wherein said oxide layer is about 1000 Angstroms thick.

18. Apparatus as defined in claim 10 wherein said substrate has a doping concentration of about 5E17 atoms/cm3.

19. Apparatus for measuring charge in an oxide layer overlying a silicon substrate said apparatus comprising:

a solid, opaque, tungsten conductive probe pressed into contact with said oxide layer, said probe being composed of a tungsten needle, said needle having a tip diameter of the order of 15 microns, said tip being characterized by an inner contacting region having a first radius of curvature and an outer non-contacting region having a second radius of curvature, said first radius being greater than said second radius to minimize the effect of shadowing by said opaque probe,

direct current biasing means coupled to said probe for biasing said substrate into a state selected from the group consisting of accumulation and inversion,

focussed light beam means for illuminating the point of contact of said tungsten probe to said oxide layer from a direction to the side of said probe,

modulating means coupled to said light beam means for intensity modulating said light to produce a modulated photovoltage within said substrate modulated in a sinusoidal fashion,

synchronized detector means coupled to said probe and to said modulating means for detecting said photovoltage, and

computing means coupled to receive said detected photovoltage to derive the value of said charge therefrom.