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Active-matrix device having silicide thin film resistor disposed between an input terminal and a short-circuit ring

  • US 5,650,834 A
  • Filed: 12/23/1994
  • Issued: 07/22/1997
  • Est. Priority Date: 07/05/1994
  • Status: Expired due to Fees
First Claim
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1. An active-matrix substrate comprising a transparent insulative substrate, thin film transistors arranged in a matrix pattern on the transparent substrate, pixel electrodes each connected to a drain electrode of each of the thin film transistors, a plurality of gate lines each adapted to supply a signal to a gate electrode of each of the thin film transistors, a plurality of source signal lines intersecting the plurality of gate lines and each adapted to supply a signal to a source electrode of each of the thin film transistors, a single shortcircuiting ring for shortcircuiting each of the signal lines at the outermost periphery of the transparent insulative substrate, and a thin film resistor having a resistance of 10 kΩ

  • to 500 kΩ

    provided intermediate between an input terminal of each of the signal lines and the single shortcircuiting ring wherein the thin film resistor comprises a silicon film &

    a silicide film overlying the silicon film.

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