Active-matrix device having silicide thin film resistor disposed between an input terminal and a short-circuit ring
First Claim
1. An active-matrix substrate comprising a transparent insulative substrate, thin film transistors arranged in a matrix pattern on the transparent substrate, pixel electrodes each connected to a drain electrode of each of the thin film transistors, a plurality of gate lines each adapted to supply a signal to a gate electrode of each of the thin film transistors, a plurality of source signal lines intersecting the plurality of gate lines and each adapted to supply a signal to a source electrode of each of the thin film transistors, a single shortcircuiting ring for shortcircuiting each of the signal lines at the outermost periphery of the transparent insulative substrate, and a thin film resistor having a resistance of 10 kΩ
- to 500 kΩ
provided intermediate between an input terminal of each of the signal lines and the single shortcircuiting ring wherein the thin film resistor comprises a silicon film &
a silicide film overlying the silicon film.
2 Assignments
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Accused Products
Abstract
An active-matrix substrate including a transparent insulative substrate, thin film transistors arranged in a matrix pattern on the transparent substrate, pixel electrodes each connected to a drain electrode of each of the thin film transistors, a plurality of gate lines each adapted to supply a signal to a gate electrode of each of the thin film transistors, a plurality of source signal lines intersecting the plurality of gate lines and each adapted to supply a signal to a source electrode of each of the thin film transistors, a shortcircuiting ring for shortcircuiting each of the signal lines at the periphery of the transparent insulative substrate, and a thin film resistor having a resistance of 10 kΩ to 500 kΩ provided intermediate between an input terminal of each of the signal lines and the shortcircuiting ring.
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Citations
4 Claims
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1. An active-matrix substrate comprising a transparent insulative substrate, thin film transistors arranged in a matrix pattern on the transparent substrate, pixel electrodes each connected to a drain electrode of each of the thin film transistors, a plurality of gate lines each adapted to supply a signal to a gate electrode of each of the thin film transistors, a plurality of source signal lines intersecting the plurality of gate lines and each adapted to supply a signal to a source electrode of each of the thin film transistors, a single shortcircuiting ring for shortcircuiting each of the signal lines at the outermost periphery of the transparent insulative substrate, and a thin film resistor having a resistance of 10 kΩ
- to 500 kΩ
provided intermediate between an input terminal of each of the signal lines and the single shortcircuiting ring wherein the thin film resistor comprises a silicon film &
a silicide film overlying the silicon film. - View Dependent Claims (2, 3, 4)
- to 500 kΩ
Specification