Monolithic microwave circuit with thick conductors

• US 5,652,173 A
• Filed: 05/09/1996
• Issued: 07/29/1997
• Est. Priority Date: 05/09/1996
• Status: Expired due to Term

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: Philips Electronics North America Corporation (Koninklijke Philips N.V.)
• Inventors: Kim, Manjin Jerome
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US08/647,386
• Time in Patent Office: 446 Days
• Field of Search: 437/21, 437/47, 437/51, 437/60, 437/918, 437/919
• US Class Current: 438/381
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 28/24 with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 438/97 Specified etch stop material

Abstract

A monolithic microwave integrated circuit (MMIC) is produced by a method which forms multilevel conductive members, including thick low-loss metallic members. The low-loss metallic members are particularly useful for forming inductors and interconnecting circuit components. The MMIC is formed on a thick oxide layer of a silicon-on-insulator structure having a high-resistivity silicon substrate to inhibit RF interaction with the substrate.

Claims

1. A method of making a monolithic microwave integrated circuit including thick metallic conductors, said method comprising the steps of:

a. forming at least one insulating layer onto an insulating silicon substrate;

b. depositing onto the at least one insulating layer a predetermined pattern of a conductive etch-stop material which is convertible to an insulating material, said pattern including at least one area that is to remain conductive and at least one area that is to be converted to insulating material;

c. depositing onto the pattern of etch-stop material, and onto any exposed areas of the at least one insulating layer, a first layer of low-temperature oxide material having a thickness corresponding to the thickness of the thick metallic conductors;

d. etching through the first layer of LTO material in a first sub-pattern corresponding to the at least one area that is to be converted to insulating material to form at least one cavity that corresponds to and exposes the at least one area;

e. converting the exposed at least one area of the conductive etch-stop material to an insulating material;

f. etching through the first layer of LTO material in a second sub-pattern corresponding to at least one portion of the at least one area of the conductive etch-stop material which is to remain conductive to form at least one cavity that corresponds to and exposes the at least one portion; and

g. filling the cavities corresponding to the at least one area and to the at least one portion with a metallic conductor material forming respective thick conductors.

3. A method as in claim 1 or 2 including the steps of:

a. selectively depositing a conductive passivation layer onto exposed portions of the thick conductors;

b. depositing a second layer of LTO material onto the passivation layer and onto exposed areas of the first layer of LTO material;

c. selectively etching through the second layer of LTO material to expose at least one area of the passivation layer via which electrical contact is to be made with a respective one of the thick conductors;

d. selectively depositing a conductive layer onto the exposed at least one area of the passivation layer to make said electrical contact.

4. A method as in claim 1 or 2 where the insulating silicon substrate has a resistivity greater than 100 Ohm-cm.

5. A method as in claim 1 or 2 where the insulating layer comprises an isolation oxide layer having a thickness greater than 2.0 μ

m.

6. A method as in claim 1 or 2 where the etch-stop material comprises polycrystalline silicon.

7. A method as in claim 1 or 2 where the conductive etch-stop material comprises doped polycrystalline silicon.

8. A method as in claim 7 where the conductive etch-stop material is converted to an insulating material by oxidation.

9. A method as in claim 1 or 2 where the first layer of LTO material has a thickness which is greater than 3 μ

m.

10. A method as in claim 1 or 2 where the metallic conductor material forming the thick conductors comprises copper.

15. A method as in claim 3 where the conductive passivation layer is selectively deposited onto the exposed portions of the thick conductors by reaction with a silicon compound.

16. A method as in claim 15 where the silicon compound comprises SiH₄.

17. A method as in claim 3 where the selectively deposited conductive layer comprises a metallic material.

18. A method as in claim 17 where the selectively deposited conductive layer comprises aluminum.

19. A method as in claim 1 or 2 where at least one area of the etch-stop material which is to remain conductive comprises an electrode.

20. A method as in claim 19 where the electrode comprises an element of a capacitor.

21. A method as in claim 1 or 2 where at least one area of the etch-stop material which is to remain conductive comprises a resistor.

22. A method as in claim 1 or 2 where at least one of the thick conductors comprises an inductor.

23. A method as in claim 22 where the at least one thick conductor forms a winding of an inductor.

2. A method of making a monolithic microwave integrated circuit including thick metallic conductors, said method comprising the steps of:

a. forming a silicon-on-insulator layer structure on an insulating silicon substrate;

b. doping the silicon layer, in at least one predetermined area, to form a layer of a conductive material;

c. depositing an insulating layer onto at least the conductive material;

d. depositing onto the insulating layer, in a predetermined pattern of areas, a layer of a conductive etch-stop material which is convertible to an insulating material, said pattern including at least one area which is to remain conductive and at least one area which is to be converted to insulating material;

e. depositing onto the layer of conductive etch-stop material, and onto any exposed areas of the insulating layer, a first layer of LTO material having a thickness corresponding to the thickness of the thick metallic conductors;

f. etching through the first layer of LTO material, in a first sub-pattern corresponding to the at least one area of the conductive etch-stop material which is to be converted to said insulating material, to expose said at least one area and to form at least one cavity in the LTO material corresponding to said at least one area;

g. converting the exposed at least one area of the conductive etch-stop material to an insulating material;

h. etching through the first layer of LTO material, in a second sub-pattern corresponding to at least one portion of the at least one area of the conductive etch-stop material which is to remain conductive, to expose said portion and to form at least one cavity in the LTO material corresponding to said portion;

p1 i. depositing an adhesion layer onto walls defining the cavities formed in the layer of LTO material and onto the exposed at least one portion;

j. filling the cavities corresponding to the at least one area and to the at least one portion with a metallic conductor material for adhering to the thin adhesion layer and forming respective thick conductors.

11. A method as in claim 2 where the adhesion layer comprises a metallic material.

12. A method as in claim 11 where the adhesion layer comprises titanium.

13. A method as in claim 2 where the adhesion layer is substantially thinner than the second insulating layer.

14. A method as in claim 13 where the adhesion layer has a thickness of approximately 1000 Å

.