Semiconductor device and package structure therefore and power inverter having semiconductor device

• US 5,652,467 A
• Filed: 07/27/1995
• Issued: 07/29/1997
• Est. Priority Date: 07/27/1995
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Onose, Hidekatsu, Sakurada, Shuroku
• Primary Examiner(s): Saadat, Mahshid D.
• Assistant Examiner(s): ARROYO, TERESA M
• Application Number:
  US08/507,989
• Time in Patent Office: 733 Days
• Field of Search: 257/147, 257/150-152, 257/785
• US Class Current: 257/785
• CPC Class Codes: H01L 24/72 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01021 Scandium [Sc]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01038 Strontium [Sr]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/1301 Thyristor
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/30107 Inductance

Abstract

An auxiliary cathode lead is contacted to a cathode buffer electrode which contacts to an unit GTO arranged at the most remote region from a gate pressure contacting portion of a GTO pellet and the push-into effect of the auxiliary cathode current during the turn-off can be remarkably performed. Without inviting bad affects such as the increase in "on" voltage, it is proposed a package structure of a semiconductor which the unit GTO arranged remote from a gate is easily to perform the turn-off. The maximum turn-off current can be heightened, it can easily correspond to the increase in the diameter of the pellet according to the large current of the unit element. Further, a condenser of a snubber circuit as a protection circuit of the unit GTO in a power inverter can be small, and the snubber loss can be lessened.

Claims

1. A semiconductor device comprises:

a semiconductor pellet on which a first main electrode, a second main electrode, and a control electrode for controlling current flow between said first main electrode and said second main electrode are formed;

a first electrode plate contacted to said first main electrode of said semiconductor pellet;

a second electrode plate contacted to said second main electrode of said semiconductor pellet;

a first outside electrode pressed under pressure in contact with said first electrode plate;

a second outside electrode pressed under pressure in contact with said second electrode plate; and

a control electrode lead contacted to said control electrode of said semiconductor pellet;

wherein the semiconductor deice comprises further;

an auxiliary electrode lead contacted to said first electrode plate, wherein said first outside electrode is not directly contacted to said auxiliary electrode lead.

3. A semiconductor device according to claim 1 or claim 2,

wherein each of said control electrode lead and said auxiliary electrode lead is respectively connected to a control circuit.

4. A semiconductor device according to any one of from claim 1 or claim 2,

wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion of said semiconductor pellet;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a peripheral portion of said semiconductor pellet.

5. A semiconductor device according to claim 1 or claim 2,

wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a peripheral portion of said semiconductor pellet;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a central portion of said semiconductor pellet.

6. A semiconductor device according to claim 1 or claim 2,

wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a portion between a central portion and a peripheral portion of said semiconductor pellet;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a portion between said central portion and said peripheral portion of said semiconductor pellet.

7. A semiconductor device according to claim 1 or claim 2,

wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion and a peripheral portion of said semiconductor pellet;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a portion between said central portion and said peripheral portion of said semiconductor pellet.

8. A semiconductor device according to claim 1 or claim 2,

wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.

9. A semiconductor device according to claim 1 or claim 2,

the semiconductor device characterized in that

said auxiliary electrode lead is fixed to said outside electrode through an insulation material member;

and

said outside electrode is pressed under pressure in contact with said electrode plate.

10. A semiconductor device according to claim 3, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion of said semiconductor pellet;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a peripheral portion of said semiconductor pellet.

11. A semiconductor device according to claim 3, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a peripheral portion of said semiconductor pellet;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a central portion of said semiconductor pellet.

12. A semiconductor device according to claim 3, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a portion between a central portion and a peripheral portion of said semiconductor pellet;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a portion between said central portion and said peripheral portion of said semiconductor pellet.

13. A semiconductor device according to claim 3, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion and a peripheral portion of said semiconductor pellet;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a portion between said central portion and said peripheral portion of said semiconductor pellet.

14. A semiconductor device according to claim 3, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.

15. A semiconductor device according to claim 4, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.

16. A semiconductor device according to claim 5, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.

17. A semiconductor device according to claim 6, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.

18. A semiconductor device according to claim 7, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.

19. A semiconductor device according to claim 3, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member;

and

said outside electrode is pressed under pressure in contact with said electrode plate.

20. A semiconductor device according to claim 4, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member;

and

said outside electrode is pressed under pressure in contact with said electrode plate.

21. A semiconductor device according to claim 5, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member;

and

said outside electrode is pressed under pressure in contact with said electrode plate.

22. A semiconductor device according to claim 6, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member;

and

said outside electrode is pressed under pressure in contact with said electrode plate.

23. A semiconductor device according to claim 7, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member;

and

said outside electrode is pressed under pressure in contact with said electrode plate.

2. A semiconductor device comprises:

a semiconductor pellet on which a first main electrode, a second main electrode, and a control electrode for controlling current flow between said first main electrode and said second main electrode are formed;

a first electrode plate contacted to said first main electrode of said semiconductor pellet;

a second electrode plate contacted to said second main electrode of said semiconductor pellet;

a first outside electrode pressed under pressure in contact with said first electrode plate;

a second outside electrode pressed under pressure in contact with said second electrode plate; and

a control electrode lead contacted to said control electrode of said semiconductor pellet;

wherein the semiconductor device comprises further;

an auxiliary electrode lead contacted to said first electrode plate, wherein said first outside electrode is not directly contacted to said auxiliary electrode lead; and

a contact portion between said first electrode plate and said auxiliary electrode lead being adjacent to said first electrode plate at a region which is most remote from a contact portion between said control electrode lead and said control electrode of said semiconductor pellet.

24. A package structure of a semiconductor device comprises:

a semiconductor pellet on which a first main electrode, a second main electrode, and a control electrode for controlling current flow between said first main electrode and said second main electrode are formed

a first electrode plate contacted to said first main electrode of said semiconductor pellet;

a second electrode plate contacted to said second main electrode of said semiconductor pellet;

a first outside electrode pressed under pressure in contact with said first electrode plate;

a second outside electrode pressed under pressure in contact with said second electrode plate; and

a common electrode lead contacted to said control electrode of said semiconductor pellet;

wherein the package structure of the semiconductor device comprises further;

an auxiliary electrode lead contacted to said first electrode plate, wherein said first outside electrode is not directly contacted to said auxiliary electrode lead.

26. A package structure of a semiconductor device according to claim 24 or claim 25,

wherein each of said control electrode lead and said auxiliary electrode lead is respectively connected to a control circuit.

27. A package structure of a semiconductor device according to from claim 24 or claim 26,

wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion of said electrode plate;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a peripheral portion of said electrode plate.

28. A package structure of a semiconductor device according to claim 24 or claim 26,

wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a peripheral portion of said electrode plate;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a central portion of electrode plate.

29. A package structure of a semiconductor device according to claim 24 or claim 26,

wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a portion between a central portion and a peripheral portion of said electrode plate;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on said central portion and said peripheral portion of said electrode plate.

30. A package structure of a semiconductor device according to claim 24 or claim 26,

wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion and a peripheral portion of said electrode plate;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a portion between said central portion and said peripheral portion of said electrode plate.

31. A package structure of a semiconductor device according to claim 24 or claim 30,

wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.

32. A package structure of a semiconductor device according to claim 24 or claim 30,

wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member;

and

wherein said outside electrode is pressed under pressure in contact with said electrode plate.

33. A semiconductor device according to claim 26, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion of said electrode plate;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a peripheral portion of said electrode plate.

34. A semiconductor device according to claim 26, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a peripheral portion of said electrode plate;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a central portion of said electrode plate.

35. A semiconductor device according to claim 26, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a portion between said a central portion and a peripheral portion of said electrode plate;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on said central portion and said peripheral portion of said electrode plate.

36. A semiconductor device according to claim 26, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion and a peripheral portion of said electrode plate;

and

wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a portion between said central portion and said peripheral portion of said electrode plate.

37. A semiconductor device according to claim 26, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.

38. A semiconductor device according to claim 27, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.

39. A semiconductor device according to claim 28, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.

40. A semiconductor device according to claim 29, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.

41. A semiconductor device according to claim 30, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.

42. A semiconductor device according to claim 26, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member;

and

wherein said outside electrode is pressed under pressure in contact with said electrode plate.

43. A semiconductor device according to claim 27, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member;

and

wherein said outside electrode is pressed under pressure in contact with said electrode plate.

44. A semiconductor device according to claim 28, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member;

and

wherein said outside electrode is pressed under pressure in contact with said electrode plate.

45. A semiconductor device according to claim 29, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member;

and

wherein said outside electrode is pressed under pressure in contact with said electrode plate.

46. A semiconductor device according to claim 30, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member;

and

wherein said outside electrode is pressed under pressure in contact with said electrode plate.

25. A package structure of a semiconductor device comprises:

a semiconductor pellet on which a first main electrode, a second main electrode, and a control electrode for controlling current flow between said first main electrode and said second main electrode are formed;

a first electrode plate contacted to said first main electrode of said semiconductor pellet;

a second electrode plate contacted to said second main electrode of said semiconductor pellet;

a first outside electrode pressed under pressure in contact with said first electrode plate;

a second outside electrode pressed under pressure in contact with said second electrode plate; and

a control electrode lead contacted to said control electrode of said semiconductor pellet;

wherein the package structure of the semiconductor device comprises further;

an auxiliary electrode lead contacted to said first electrode plate wherein said first outside electrode is not directly contacted to said auxiliary electrode lead; and

wherein a contact portion between said first electrode plate and said auxiliary electrode lead is adjacent to said electrode plate at a region most remote from a contact portion between said control electrode lead and said control electrode of said semiconductor pellet.