Current comparator automatic output control

• US 5,652,547 A
• Filed: 09/11/1995
• Issued: 07/29/1997
• Est. Priority Date: 06/20/1995
• Status: Expired due to Fees

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Por, Chee Seong, Mokhtar, Fuad Haji
• Primary Examiner(s): Mullins, James B.
• Application Number:
  US08/526,186
• Time in Patent Office: 687 Days
• Field of Search: 330/129, 330/138, 330/139, 330/140, 330/278, 330/279, 330/285, 455/126, 455/127
• US Class Current: 330/279
• CPC Class Codes: H03F 1/302 in bipolar transistor amplifiers H03F1/303, H03F1/305, H03F1/307 take precedence
• CPC Class Codes: H03G 3/004 Control by varying the supply voltage

Abstract

A circuit for controlling the output level of a power amplifier is disclosed. A current comparator (230) compares a reference current with a sensed current which is representative of the power amplifier current state. The reference current is used not only for comparison with the sensed current but also for setting the power amplifier (104). The current comparator (230) provides an output, based on the comparison, that is coupled to the power amplifier so that the power amplifier current is maintained at an optimum level for minimizing temperature dependent variations and substantially leveling the power of the power amplifier.

Claims

1. A method for controlling an RF power amplifier output in an RF power amplifier comprising the steps of:

deriving a base bias current from a bipolar transistor having a base emitter voltage drop Vbe threshold voltage of a first magnitude and temperature variation;

biasing a diode rectifier having a diode threshold voltage (Vd) of a second magnitude and temperature variation about the same as the first magnitude for providing a sensed current of an opposite polarity from said base bias current;

summing said base bias current and said sensed current such that said first and second magnitude and temperature variations are canceled over temperature in a current node having an input, a first output connected to the base of said bipolar transistor, and a second output coupled to the anode of said diode rectifier;

current comparing a level of sensed current, that is representative of the RF power amplifier current state of said RF power amplifier, with a reference current;

providing said reference current for comparison with said sensed current and setting the RF power amplifier current state at said input of said current node; and

providing an output that is coupled to said power amplifier so that the RF power amplifier current is maintained at an optimum level for minimizing temperature dependent variations and substantially leveling the power of said RF power amplifier.

2. An RF power amplifier level controlling circuit comprising:

a bipolar transistor having a base emitter voltage drop Vbe threshold voltage of a first magnitude and temperature variation for deriving a variable bias current;

bias means for providing said variable bias current to said bipolar transistor in response to a programmable reference signal;

a diode rectifier having a diode threshold voltage (Vd) of a second magnitude and temperature variation about the same as the first magnitude for providing a sensed current of an opposite polarity from said variable bias current; and

a current node having an input connected to said bias means, a first output connected to the base of said bipolar transistor, and a second output coupled to the anode of said diode rectifier, for summing said variable bias current and said sensed current such that said first and second magnitude and temperature variations are canceled over temperature wherein said bipolar transistor maintains said variable bias current at a substantially constant level after the level has been determined by said programmable reference signal.

3. A radio comprising:

a transmitter section for modulating an RF signal;

an RF signal power amplifier for amplifying said modulated RF signal;

an antenna for radiating said amplified modulated RF signal; and

a radio frequency RF signal power amplifier automatic output control (AOC) circuitry having a self-temperature compensated current comparator for controlling an output level of the RF signal power amplifier wherein said AOC circuitry comprises;

a bipolar transistor having a base emitter voltage drop (Vbe) threshold voltage of a first magnitude and temperature variation for deriving a base bias current;

a diode rectifier having a diode threshold voltage (Vd) of a second magnitude and temperature variation approximately as the first magnitude for providing a sensed current relating to said output level of said RF signal power amplifier and of an opposite polarity from said base bias current; and

a current node having an input, a first output connected to the base of said bipolar transistor, and a second output coupled to the anode of said diode rectifier for summing said base bias current and said sensed current such that said first and second magnitude and temperature variations are canceled over temperature.

4. A radio frequency (RF) circuit for controlling power amplifier output in an RF power amplifier for a radio, the RF circuit comprising,

a bipolar transistor having a base emitter voltage drop (Vbe) threshold voltage of a first magnitude and temperature variation for deriving a base bias current;

a diode rectifier having a diode threshold voltage (Vd) of a second magnitude and temperature variation substantially equal to the first magnitude for providing a sensed current of an opposite polarity from said base bias current;

a current node having an input, a first output connected to the base of said bipolar transistor, and a second output coupled to the anode of said diode rectifier for summing said base bias current and said sensed current such that said first and second magnitude and temperature variations are canceled over temperature;

means for providing a reference current connected to said input of said current node for comparing with said sensed current and for setting a RF power amplifier current state, and

wherein said bipolar transistor compares a level of said sensed current, that is representative of the RF power amplifier current state of said RF power amplifier with said reference current and further wherein said bipolar transistor provides an output that is coupled to said RF power amplifier so that the RF power amplifier current is maintained at an optimum level for minimizing temperature dependent variations and substantially leveling the power of said RF power amplifier.

5. The RF circuit of claim 4, wherein said sensed current is indicative of a sensed RF voltage.

6. The RF circuit of claim 5, wherein said sensed RF voltage is direct-current (DC) voltage rectified by said diode rectifier for receiving a sample signal representative of the RF power amplifier output, said diode rectifier rectifying said sample signal to thereby provide for said sensed current.

7. The RF circuit of claim 6, wherein said sensed current is indicative of the current flowing through said diode rectifier.

8. The RF circuit of claim 6, wherein said diode rectifier is a half wave diode rectifier having an anode coupled to said sensed RF voltage.

9. The RF circuit of claim 6, wherein said diode rectifier is a half wave diode rectifier having a cathode coupled to said sensed RF voltage.

10. The RF circuit of claim 6, wherein said diode rectifier is a Schottky diode doubler full-wave rectifier.

11. The RF circuit of claim 4, wherein said bipolar transistor comprises a bipolar emitter coupled transistor having a base input node for receiving said reference current and said sensed current to derive said base bias current, and a collector output for controlling the RF power amplifier current state of said power amplifier in response to said base bias current.

12. The RF circuit of claim 11, wherein said base bias current is substantially reduced when said sensed current is increased about the value of said reference current.

13. An RF current comparator automatic output control (AOC) comprising:

an input source for providing a reference current;

an amplifier gain stage having an input and an output;

an RF final amplifier having an input for receiving an input signal and an output for providing an RF output signal in response to said output from said amplifier gain stage;

a bipolar transistor having a base emitter voltage drop (Vbe) threshold voltage of a first magnitude and temperature variation for deriving a base bias current with varying base current conditions, where said bipolar transistor comprises an emitter-coupled transistor having a base input coupled to a current node, a collector output, and three transistor operating regions for controlling the collector output in response to the base input;

a diode rectifier having a diode threshold voltage (Vd) of a second magnitude and temperature variation about the same as the first magnitude for receiving a sample signal negatively representative of said RF amplifier output signal, said diode rectifier rectifying said sample signal to thereby provide for a detector current and said diode rectifier providing said detector current of an opposite polarity from said base bias current; and

wherein the current node having an input connected to said input source, a first output connected to the base of said bipolar transistor, and a second output coupled to the anode of said diode rectifier, for summing said base bias current and said detector current such that said first and second magnitude and temperature variations are canceled over temperature and for comparing said detector current of said diode rectifier with said reference current to obtain one of three signal conditions;

a first greater than reference current cut-off condition, a second much less than reference saturated current condition, or about equal steady-state condition; and

further wherein said three transistor operating regions include;

a first cut-off region wherein the base input has said base bias current with an insufficient base current condition for de-activating the transistor and providing an insufficient collector current as an input to the amplifier gain stage to reduce the gain of the amplifier gain stage in response to said first greater than reference current signal condition;

a second saturation mode wherein the base input has said base bias current with an exceedingly large base current condition for providing a maximum collector current as an input to the amplifier gain stage for maximally adjusting the output of said amplifier in relation to a maximum of said reference current magnitude to thereby maintain a maximum gain amplifier output signal in response to said second much less than reference current condition; and

a third active mode wherein the base input has said base bias current with a linear range of base current conditions for providing a linearly-related collector current as an input to the amplifier gain stage for linearly adjusting the output of said amplifier gain stage in relation to said reference current to thereby maintain a desired amplifier RF output signal in response to said third about equal signal condition.

14. The RF current comparator AOC of claim 13 wherein said input source comprises a programmable reference current source for providing said reference current that is representative of the RF final amplifier output signal.

15. The RF current comparator AOC of claim 13 wherein said input source comprises:

means for storing a plurality of programming voltages, each programming voltage being representative of a given range for the amplifier output signal; and

controller means for providing one of said programming voltages to derive said reference current.