Single resist layer lift-off process for forming patterned layers on a substrate
First Claim
Patent Images
1. A process for forming a pattern of material on a substrate, comprising the steps of:
- depositing a single photoresist layer on an upper surface of said substrate to form a resist/substrate preform;
subjecting said resist/substrate preform to a first heat treatment to adhere said resist layer to said substrate;
immersing said resist/substrate preform in a bath of aromatic solvent;
subjecting said resist/substrate preform to a second heat treatment;
exposing portions of said resist layer in the shape of said pattern;
developing said resist layer to remove said exposed portions thereof and form a patterned resist layer wherein openings are provided through said resist layer to expose the upper surface of said substrate;
applying a layer of deposition material on the patterned resist layer and through the openings therein to forms aid pattern of said deposition material on the upper surface of said substrate;
subjecting said substrate, with the remaining resist layer and deposition material thereon, to a third heat treatment at a temperature within a range of about 100°
C. to 140°
C. andimmersing said substrate, with the remaining resist layer and deposition material thereon, in a solvent bath to lift-off said resist layer, with deposition material thereon, while leaving said pattern of deposition material on the upper surface of said substrate.
0 Assignments
0 Petitions
Accused Products
Abstract
A single resist layer lift-off process for forming patterned layers on a substrate, wherein a post-soak bake is used to control the extent to which chlorobenzene penetrates the resist layer. A post-metallization bake can also be employed to improve lift-off of the resist layer. The process of the present invention provides the resist profile with increased overhang length and the sidewalls of the resist profile with a negative slope. Such increased overhang length and negative slope prevent metallization of the sidewalls of the resist, and thus facilitate more rapid removal of the resist during lift-off.
26 Citations
24 Claims
-
1. A process for forming a pattern of material on a substrate, comprising the steps of:
-
depositing a single photoresist layer on an upper surface of said substrate to form a resist/substrate preform; subjecting said resist/substrate preform to a first heat treatment to adhere said resist layer to said substrate; immersing said resist/substrate preform in a bath of aromatic solvent; subjecting said resist/substrate preform to a second heat treatment; exposing portions of said resist layer in the shape of said pattern; developing said resist layer to remove said exposed portions thereof and form a patterned resist layer wherein openings are provided through said resist layer to expose the upper surface of said substrate; applying a layer of deposition material on the patterned resist layer and through the openings therein to forms aid pattern of said deposition material on the upper surface of said substrate; subjecting said substrate, with the remaining resist layer and deposition material thereon, to a third heat treatment at a temperature within a range of about 100°
C. to 140°
C. andimmersing said substrate, with the remaining resist layer and deposition material thereon, in a solvent bath to lift-off said resist layer, with deposition material thereon, while leaving said pattern of deposition material on the upper surface of said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
-
Specification