Magnetic spin injected field effect transistor and method of operation

• US 5,654,566 A
• Filed: 05/06/1996
• Issued: 08/05/1997
• Est. Priority Date: 04/21/1995
• Status: Expired due to Term

• Current Assignee: Seagate Technology International (Seagate Technology Holdings Plc)
• Original Assignee: Mark B. Johnson
• Inventors: Johnson, Mark B.
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/643,804
• Time in Patent Office: 456 Days
• Field of Search: 257/295, 257/421, 257/422, 257/424, 257/425, 257/426, 257/427, 360/113, 360/126, 324/246, 324/249, 324/252, 365/65, 365/69, 365/67, 365/97, 365/145, 365/171, 365/243.5, 365/182
• US Class Current: 257/295
• CPC Class Codes: G11B 5/378 Integrated structures
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 11/18 using Hall-effect devices
• CPC Class Codes: H01L 29/66984 Devices using spin polarized carriers
• CPC Class Codes: H03K 19/168 using thin-film devices
• CPC Class Codes: H03K 19/18 using galvano-magnetic devices, e.g. Hall-effect devices

Abstract

A new hybrid magnetic spin injected-FET structure can be used as a memory element for the nonvolatile storage of digital information, as well as in other environments, including for example logic applications for performing digital combinational tasks, or a magnetic field sensor. The hybrid FET uses ferromagnetic materials for the source and drain, and like a conventional FET, has two operating states determined by a gate voltage, "off" and "on". The ferromagnetic layers of the hybrid FET are fabricated to permit the device to have two stable magnetization states, parallel and antiparallel. In the "on" state the spin injected FET has two settable, stable resistance states determined by the relative orientation of the magnetizations of the ferromagnetic source and drain. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the drain to be parallel or antiparallel with that of the source, thus changing the resistance of the device to a current of spin polarized electrons injected into the source and flowing to the drain through the channel under the gate. The new FET can be used as a memory cell because the drain magnetization is non-volatile, and can represent a binary data value to be stored in the cell. A conductive write line can be used for inductively coupling an input magnetic field (representing a data value to be stored in the device) with the drain magnetization to alter the orientation state of the latter. An array of spin injected FETs can be coupled together in an array to form a new hybrid FET memory array. The new FET can also be used as a logic gate that stores the result of a boolean function. A magnetic field generated by the combined current of one or more input data signals is coupled to the spin injected FET. Depending on the particular function to be implemented, the ferromagnetic drain magnetization can be configured to change or retain its orientation based on particular predefined combinations of input data signals.

Claims

1. A magnetic spin injected transistor device comprising:

first and second separated high conductance regions;

a first ferromagnetic layer having a first coercivity, and electrically coupled to said first high conductance region;

a second ferromagnetic layer having a second coercivity smaller than said first coercivity, and electrically coupled to said second high conductance region; and

a gate situated between said high conductance regions.

2. The device of claim 1, further including an insulating layer situated between the gate and the two high conductance regions.

3. The device of claim 2, further including a channel region beneath said gate and insulating layer that forms a low impedance electrical path between said first and second high conductance regions when a control signal is applied to the gate and a high impedance electrical path between these regions at all other times.

4. The device of claim 1, wherein the first ferromagnetic layer can be set to a first magnetization orientation, the second ferromagnetic layer can be set to a second magnetization orientation, and an impedance to spin polarized charge carrier current flow in said device is based on the first and second magnetization orientations.

5. The device of claim 2, wherein the impedance to spin polarized electron current flow is relatively low when the first and second magnetization orientations are parallel, and relatively high when the first and second magnetization orientations are anti-parallel.

6. The device of claim 5, wherein the impedance to spin polarized current flow of the device can be set to any discrete level k of n distinct levels by fixing the first magnetization orientation, and setting the second magnetization orientation to have an angle deviation of 180*(n-k)/n from the first magnetization orientation.

7. The device of claim 1, wherein both the first and second ferromagnetic layers are magnetically anisotropic.

8. The device of claim 1, wherein the first ferromagnetic layer is a 0.6 micron thin film of iron, cobalt or permalloy, said second ferromagnetic layer is a 0.6 micron thin film of iron, cobalt or permalloy, said first and second high conductance regions are formed of a highly doped region of a silicon substrate.

9. The device of claim 1, wherein the first and second high conductance regions are spaced apart by a distance approximately equal to a mean free path of an electron in these regions, and have an electron spin depth longer than a maximum length of these regions.

10. The device of claim 1, further including a conductive write line for carrying a write electric current and inductively coupling a write magnetic field associated with said write current to said second ferromagnetic layer.

11. The device of claim 4, wherein the magnetization orientation of the second ferromagnetic layer:

(i) can be set to a first state in response to a first amplitude write current and associated first write magnetic field; and

(ii) can be set to a second state in response to a second amplitude write current and associated second write magnetic field.

12. The device of claim 11, wherein the second ferromagnetic layer magnetization orientation is retained in said state until a different state is set in said layer.

13. The device of claim 1, wherein the first ferromagnetic layer is coupled to a magnetic field generated by magnetically recorded data, and a spin polarized charge carrier current is generated in the channel is related to a value of the data so that the device operates as a magnetic field sensor.

14. The device of claim 1, wherein said transistor is used as a memory element, and the memory element has a logic state corresponding to one of a first and a second value.

15. The device of claim 11, wherein the two states of the magnetization orientation of said second ferromagnetic layer correspond to data values stored in said memory element.

16. The device of claim 1, further including a plurality of additional spin injected transistors coupled together in an array to form a spin injected transistor memory array.

17. The device of claim 13, wherein an output indicative of the logic state of said device can be obtained when a control signal is applied to the gate.

18. The device of claim 13, further including a sense circuit for comparing the output of the device with a reference value to determine the logic state of said device.

20. The device of claim 18, further including a channel region beneath said gate and insulating layer that forms a low impedance electrical path between said first and second high conductance regions when a control signal is applied to the gate and a high impedance electrical path between these regions at all other times.

21. The device of claim 18, wherein the spin injected current ranges from a relatively high value when the first and second magnetization orientations are parallel to a relatively low value when the first and second magnetization orientations are anti-parallel.

22. The device of claim 18, wherein the first and second ferromagnetic layers are magnetically anisotropic.

23. The device of claim 18, wherein the first and second high conductance regions are spaced apart by a distance of the order of a carrier mean free path in these regions, and have a carrier spin depth longer than a maximum length of these regions.

24. The device of claim 18, wherein the first ferromagnetic layer has a first coercivity, and the second ferromagnetic layer has a second coercivity smaller than said first coercivity.

25. The device of claim 23, further including a conductive write line for carrying a write electric current and inductively coupling a write magnetic field associated with said write current to said second ferromagnetic layer.

26. The device of claim 20, wherein the magnetization orientation of the second ferromagnetic layer:

(i) can be set to a first state in response to a first amplitude write current and associated first write magnetic field; and

(ii) can be set to a second state in response to a second amplitude write current and associated second write magnetic field.

27. The device of claim 25, wherein the second ferromagnetic layer magnetization orientation is retained in said state until a different state is set in said layer.

28. The device of claim 18, wherein said transistor is used to implement a digital logic function, and said transistor stores a logic state corresponding to the magnetization orientation of the second ferromagnetic layer, which orientation corresponds to one of first and second magnetization states.

29. The device of claim 18, further including a conductive write line for inductively coupling said second ferromagnetic layer to a logical input magnetic field associated with one or more input logic signals.

30. The device of claim 29, wherein depending on the digital logical function implemented by the transistor, the magnetization orientation of the second ferromagnetic layer is set to the first state, the second state, or is left unchanged in response to the logical input magnetic field associated with the input logic signals.

31. The device of claim 29, wherein the magnetization state of the second ferromagnetic layer can be set initially based on the logical function to be implemented by the magnetic spin injected transistor.

32. The device of claim 29, wherein the magnetization state of the first ferromagnetic layer can be set initially based on the logical function to be implemented by the magnetic spin injected transistor.

33. The device of claim 29, wherein the input signals are based on output signals from one or more additional spin injected transistors.

34. The device of claim 29, wherein the logic device implements the predetermined logical function of one of the following:

an OR gate, a NOR gate, a NOT gate, a NAND gate, or an AND gate, and wherein the predetermined logical function is based on an initial configuration of the magnetization state of the ferromagnetic layers, and the amplitude of the current associated with each of the data input signals.

35. The device of claim 28, further including a plurality of additional spin injected transistors coupled together in an array to form a spin injected transistor logic gate array.

36. The device of claim 28, wherein an output indicative of the logic state of said device can be obtained when a control signal is applied to the gate.

37. The device of claim 28, further including a sense circuit for comparing the output of the device with a reference value to determine the logic state of said device.

19. A magnetic spin injected transistor device comprising:

a first ferromagnetic layer for generating spin polarized electrons and having a first magnetization orientation;

a first high conductance region coupled to the first ferromagnetic layer;

a second ferromagnetic layer having a second magnetization orientation;

a second high conductance region coupled to the second ferromagnetic layer;

a gate situated between said first and second high conductance regions for controlling electrical conductance of a channel region connecting the first and second high conductance regions in response to a control signal;

wherein a spin polarized current comprised of spin polarized charge carriers flows from the first ferromagnetic layer to the second ferromagnetic layer when the channel is controlled to have a high electrical conductance; and

wherein the spin injected charge carrier current has a first value when the first and second magnetization orientations are the same, and has a second, different value when the first and second magnetization orientations are different.

38. A logic device for implementing a logic function relating a combination of one or more input signals to an output signal comprising:

a first ferromagnetic layer having a first magnetization orientation, for generating spin polarized electrons;

a first high conductance region coupled to the first ferromagnetic layer;

a second ferromagnetic layer having a second magnetization orientation;

a second high conductance region coupled to the second ferromagnetic layer;

a gate situated between said first and second high conductance regions for controlling electrical conductance of a channel region connecting the first and second high conductance regions in response to a control signal;

a wire for inductively coupling said second ferromagnetic layer with a magnetic field generated by the combination of one or more input data signals on said wire, the input data signals having either a first or second current value, and whereby the second ferromagnetic layer magnetization orientation is alterable by magnetic fields corresponding to combinations of said input data signals related to said logic function;

said output signal corresponding to a spin polarized current comprised of spin polarized charge carriers, and having a first value when the first and second magnetization orientations are the same, and having a second, different value when the first and second magnetization orientations are different.

39. The device of claim 38, wherein the magnetization orientation of the second ferromagnetic layer can be altered to have one of a first and a second magnetization state.

40. The device of claim 38, wherein the magnetization state of the second ferromagnetic layer can be set initially based on the logical function to be implemented by the logic device.

41. The device of claim 38, wherein the input signals are based on output signals from one or more additional spin injected transistors.

42. The device of claim 38, wherein the logic device implements the predetermined logical function of one of the following:

an OR gate, a NOR gate, a NOT gate, a NAND gate, or an AND gate, and wherein the predetermined logical function is based on an initial configuration of the magnetization state of the ferromagnetic layers, and the amplitude of the current associated with each of the data input signals.

43. The device of claim 38, further including a plurality of additional spin injected transistors coupled together in an array to form a spin injected transistor logic gate array performing a plurality of logical functions and storing the result of these functions.

44. The device of claim 38, wherein an output indicative of the logic state of said device can be obtained when a control signal is applied to the gate.

45. The device of claim 38, further including a sense circuit for comparing the output of the device with a reference value to determine the logic state of said device.

46. The device of claim 43, further including a readout circuit for reading out the results of the results of the logic functions in a predetermined sequence.

47. The device of claim 44, further including a level shifter circuit for converting the output of the logic device to an acceptable voltage logic level usable by a later stage semiconductor circuit.

48. A memory cell for storing a data state corresponding to one of a first and a second logical data value, said memory cell comprising:

a first ferromagnetic layer having a first magnetization orientation;

a first high conductance region coupled to the first ferromagnetic layer;

a second ferromagnetic layer having a second alterable magnetization orientation;

a second high conductance region coupled to the second ferromagnetic layer;

a gate situated between said first and second high conductance regions for controlling electrical conductance of a channel region connecting the first and second high conductance regions in response to a cell select signal; and

wherein said memory element stores the first logical value when the first and second magnetization orientations are aligned, and the second logical value when the first and second magnetization orientations are opposite.

49. The device of claim 48, wherein the data state stored in the cell can be read by applying the control signal and measuring a spin polarized current which flows between the ferromagnetic layers in said device, the current being relatively high when the first and second magnetization orientations are aligned to indicate when the first logical data value is stored, and relatively low when the first and second magnetization orientations are opposite to indicate when the second logical data value is stored.

50. The device of claim 49, further including a wire for inductively coupling said second ferromagnetic layer with a magnetic field generated by an input data signal on said wire, the input data signal having one of a first and a second current value corresponding to said first and second logical data values respectively, and whereby the second layer magnetization orientation can be altered by the magnetic field to become one of aligned and opposite to the first layer magnetization.

51. The cell of claim 50, wherein the memory cell is retained until a different state is written to said cell.

52. The cell of claim 48, wherein the channel region isolates the memory cell when said cell is not selected by said cell select signal.

53. A method of operating a hybrid magnetic spin injected-field effect transistor device comprising the steps of:

providing a current of spin polarized charge carriers to flow from a first ferromagnetic layer to a second ferromagnetic layer;

controlling the flow of spin polarized charge carriers between the two layers by applying a control signal to a gate of the field effect transistor having a channel interposed between the two layers; and

controlling the quantity of spin polarized current flowing in the device by aligning a second magnetization orientation state of the second ferromagnetic layer relative to a first magnetization orientation state of the first ferromagnetic layer;

whereby when said control signal is applied, a relatively high amount of spin polarized current flows in said device when the magnetization orientation states of the two ferromagnetic layers are the same, and a relatively small amount of spin polarized current flows in said device when the magnetization orientation states of the two ferromagnetic layers are opposite to each other.

54. The method of claim 53, wherein aligning of the second magnetization orientation state of the second ferromagnetic layer relative to the first magnetization orientation state of the first ferromagnetic layer can be changed by inductively coupling the second ferromagnetic layer with a write line generating a magnetic field.

55. The method of claim 54, wherein the magnetic field from the write line can set the second magnetization orientation to either of two stable non-volatile states, and these states represent a binary value of a data bit to be stored in the device.

56. The method of claim 54, wherein the magnetic field from the write line can set the second magnetization orientation to either of two stable non-volatile states, and these states represent a boolean function binary data value relating one or more input logic signals, and wherein the second magnetization orientation stores the boolean function binary data value and only changes in response to certain predetermined combinations of the input logic signals.

57. The method of claim 55, further including a step of reading the data bit stored in the device by applying the control signal to the gate, and comparing an output signal generated by the spin polarized current with a reference value to determine the data bit stored in said device.

58. The method of claim 56, further including a step of reading the boolean function binary data stored in the device by applying the control signal to the gate, and comparing an output signal generated by the spin polarized current with a reference value to determine the boolean function binary data stored in said device.

59. The device of claim 58, further including a step of converting the output signal of the logic device to an acceptable voltage logic level usable by a later stage semiconductor circuit.