Non-distorting video camera for use with a system for controlling growth of a silicon crystal

• US 5,656,078 A
• Filed: 11/14/1995
• Issued: 08/12/1997
• Est. Priority Date: 11/14/1995
• Status: Expired due to Term

• Current Assignee: SunEdison, Inc.
• Original Assignee: MEMC Electronic Materials, Inc. (SunEdison, Inc.)
• Inventors: Fuerhoff, Robert H.
• Primary Examiner(s): HITESHEW, FELISA CARLA
• Application Number:
  US08/558,609
• Time in Patent Office: 637 Days
• Field of Search: 117/13, 117/14, 117/15, 117/200, 117/201, 117/202, 250/559.07, 250/559.08, 364/560, 364/564
• US Class Current: 117/201
• CPC Class Codes: C30B 15/26 using television detectors; using photo or X-ray detectors
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: Y10T 117/1004 with means for measuring, testing, or sensing
• CPC Class Codes: Y10T 117/1008 with responsive control means

Abstract

System for determining the diameter of a silicon crystal being pulled from a silicon melt for controlling a silicon crystal growing apparatus. The melt has a planar surface including a meniscus that is visible as a bright ring adjacent the crystal. A camera positioned above the melt surface and away from the crystal includes an image plane that is generally parallel to the melt surface and responsive to light from the bright ring for generating an image pattern of a portion of the bright ring. As such, the camera compensates for distortion of the image pattern caused by the position of the camera relative to the crystal. Image processing circuitry detects a characteristic of the image pattern and defines an edge of the bright ring as a function of the detected characteristic. The image processing circuitry further defines a generally circular shape including the defined edge of the bright ring. The diameter of the crystal is then determined based on the diameter of the defined shape for use in controlling the crystal growing apparatus.

Claims

1. A system for use in combination with an apparatus for growing a silicon crystal from a silicon melt, said system for determining a dimension of the silicon crystal being pulled from the silicon melt, said silicon melt having a substantially planar surface including a meniscus that is visible as a bright area adjacent the silicon crystal, said system comprising:

a camera positioned above the silicon melt surface and away from the silicon crystal for generating an image pattern of a portion of the bright area adjacent the silicon crystal, said camera including an image projector for receiving and transmitting light from the bright area adjacent the silicon crystal and an image plane responsive to the light transmitted by the image projector for generating the image pattern of the portion of the bright area adjacent the silicon crystal, said image plane being substantially parallel to the silicon melt surface thereby to compensate for distortion of the image pattern caused by the position of the camera relative to the silicon crystal;

a detection circuit for detecting a characteristic of the image pattern;

a defining circuit for defining an edge of the bright area as a function of the detected characteristic and for defining a shape including the defined edge of the bright area; and

a measurement circuit for determining a dimension of the defined shape whereby the dimension of the silicon crystal is determined as a function of the determined dimension of the defined shape.

2. The system of claim 1 wherein the image plane comprises a substantially planar photosensitive surface defining a first optical axis substantially perpendicular to the photosensitive surface.

3. The system of claim 2 wherein the image projector comprises a lens defining a second optical axis through its center and further comprising a lens mount for offsetting the lens of the camera relative to the image plane so that the second optical axis is generally parallel to and offset from the first optical axis.

4. The system of claim 3 wherein the second optical axis is offset from the first optical axis by approximately 3/8 inch.

5. The system of claim 2 wherein the image projector defines a second optical axis through its center and further comprising a mount for rotating the image projector of the camera relative to the image plane so that the second optical axis is at an acute angle relative to the first optical axis and is directed at the bright area adjacent the silicon crystal.

6. The system of claim 5 wherein the acute angle of the second optical axis relative to the first optical axis is approximately 35°

.

7. The system of claim 1 wherein the silicon crystal is pulled from the silicon melt along a vertical axis, said vertical axis being within the meniscus and substantially perpendicular to the silicon melt surface, and wherein the camera is positioned away from the vertical axis.

8. The system of claim 1 wherein the silicon crystal is substantially cylindrical and the bright area is substantially ring-shaped and wherein the defined shape is substantially circular and the dimension of the defined shape determined by the measurement circuit is the diameter of the defined circular shape.

9. A system for use in combination with an apparatus for growing a silicon crystal from a silicon melt, said system for determining a dimension of the silicon crystal being pulled from the silicon melt, said silicon melt having a substantially planar surface including a meniscus that is visible as a bright area adjacent the silicon crystal, said silicon crystal being pulled from the silicon melt along a vertical axis within the meniscus which is substantially perpendicular to the silicon melt surface, said system comprising:

a camera positioned above the silicon melt surface and away from the vertical axis for generating an image pattern of a portion of the bright area adjacent the silicon crystal, said camera including an image projector for receiving and transmitting light from the bright area adjacent the silicon crystal and an image plane responsive to the light transmitted by the image projector for generating the image pattern of the portion of the bright area adjacent the silicon crystal, said camera having an optical axis that is substantially parallel to the vertical axis thereby to compensate for distortion of the image pattern caused by the position of the camera relative to the vertical axis;

a detection circuit for detecting a characteristic of the image pattern;

a defining circuit for defining an edge of the bright area as a function of the detected characteristic and for defining a shape including the defined edge of the bright area; and

a measurement circuit for determining a dimension of the defined shape whereby the dimension of the silicon crystal is determined as a function of the determined dimension of the defined shape.

10. The system of claim 9 wherein the image projector comprises a lens defining the optical axis through its center.

11. The system of claim 10 wherein the image plane is substantially parallel to the silicon melt surface and further comprising a lens mount for offsetting the lens of the camera relative to the image plane so that the optical axis is offset from the center of the image plane.

12. The system of claim 11 wherein the optical axis is offset from the center of the image plane by approximately 3/8 inch.

13. The system of claim 9 wherein the image plane comprises a substantially planar photosensitive surface and wherein the optical axis is defined to be substantially perpendicular to the photosensitive surface.

14. The system of claim 13 further comprising a mount for rotating the image projector of the camera relative to the image plane so that the image projector is directed at the bright area adjacent the silicon crystal.

15. The system of claim 14 wherein the image projector is at an acute angle relative to the optical axis of approximately 35°

.

16. The system of claim 9 wherein the silicon crystal is substantially cylindrical and the bright area is substantially ring-shaped and wherein the defined shape is substantially circular and the dimension of the defined shape determined by the measurement circuit is the diameter of the defined circular shape.

17. A system for growing a silicon crystal from a silicon melt, said system comprising:

an apparatus for pulling the silicon crystal from the silicon melt, said silicon melt having a substantially planar surface including a meniscus that is visible as a bright area adjacent the silicon crystal as the silicon crystal is pulled from the silicon melt;

a camera positioned above the silicon melt surface and away from the silicon crystal for generating an image pattern of a portion of the bright area adjacent the silicon crystal, said camera including an image projector for receiving and transmitting light from the bright area adjacent the silicon crystal and an image plane responsive to the light transmitted by the image projector for generating the image pattern of the portion of the bright area adjacent the silicon crystal, said image plane being substantially parallel to the silicon melt surface thereby to compensate for distortion of the image pattern caused by the position of the camera relative to the silicon crystal;

a detection circuit for detecting a characteristic of the image pattern;

a defining circuit for defining an edge of the bright area as a function of the detected characteristic and for defining a shape including the defined edge of the bright area; and

a measurement circuit for determining a dimension of the defined shape whereby the dimension of the silicon crystal is determined as a function of the determined dimension of the defined shape, wherein said apparatus is responsive to the measurement circuit for growing the silicon crystal from the silicon melt as a function of the determined dimension of the silicon crystal.