Liquid solution of TiBr.sub.4 in Br.sub.2 used as a precursor for the chemical vapor deposition of titanium or titanium nitride

• US 5,656,338 A
• Filed: 06/07/1995
• Issued: 08/12/1997
• Est. Priority Date: 12/13/1994
• Status: Expired due to Fees

• Current Assignee: Roy G. Gordon
• Original Assignee: Roy G. Gordon
• Inventors: Gordon, Roy G.
• Primary Examiner(s): King, Roy V.
• Application Number:
  US08/473,499
• Time in Patent Office: 797 Days
• Field of Search: 427/576, 427/573, 427/569, 427/250, 427/255.1, 427/255.2, 427/124, 427/126.1, 427/126.2, 427/314
• US Class Current: 427/576
• CPC Class Codes: C23C 16/14 Deposition of only one other metal element
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence

Abstract

Chemical vapor deposition of titanium metal is accomplished by forming a liquid solution of titanium tetrabromide in bromine, vaporizing the solution and contacting the vapor mixture with a plasma in the vicinity of a substrate. These titanium films show good conformality, low electrical resistance and are suitable as contact and adhesion layers in semiconductor microelectronics. By mixing ammonia gas with the mixed vapors of titanium tetrabromide and bromine, films containing titanium nitride are deposited at about 400° C. These titanium nitride films are suitable as diffusion barriers and adhesion layers in semiconductor devices.

Claims

1. A process for the chemical vapor deposition of titanium or a titanium-containing material on a substrate comprising the steps of:

a) forming a liquid solution of titanium tetrabromide dissolved in bromine;

b) vaporizing said solution to form a vapor mixture;

c) contacting said vapor mixture with a plasma in the vicinity of the substrate; and

d) depositing the titanium or the titanium-containing material on said substrate.

3. The process of claims 1 or 2 in which said solution is liquid at room temperature.

4. The process of claims 1 or 2 in which the titanium tetrabromide content of the solution is not more than 88 weight percent.

5. The process of claims 1 or 2 in which the titanium tetrabromide content of the solution is not more than 85 weight percent.

6. The process of claims 1 or 2 in which the titanium tetrabromide content of the solution is not more than 80 weight percent.

2. A process for the chemical vapor deposition of titanium nitride or a titanium nitride-containing material comprising the steps of:

a) forming a liquid solution of titanium tetrabromide dissolved in bromine;

b) vaporizing said solution to form a vapor mixture;

c) mixing said vapor mixture with ammonia vapor in the vicinity of a heated substrate; and

d) depositing the titanium nitride or the titanium-nitride-containing material on said substrate.

7. A process for the chemical vapor deposition of titanium metal or a titanium-containing material, said process comprising the steps of:

a) forming a liquid solution of titanium tetrabromide dissolved in bromine;

b) transferring some or all of said liquid solution into a container;

c) removing all or most of the bromine out of said container by distillation;

d) flowing titanium tetrabromide vapor out of said container into a chamber for chemical vapor deposition;

e) contacting said titanium tetrabromide vapor with a plasma; and

f) depositing the titanium metal or the titanium-containing material on a substrate in said chamber.

8. A process for the chemical vapor deposition of titanium nitride or a titanium nitride-containing material, said process comprising the steps of;

a) forming a liquid solution of titanium tetrabromide dissolved in bromine;

b) transferring some or all of said liquid solution into a container;

c) removing all or most of the bromine out of said container by distillation;

d) flowing titanium tetrabromide vapor out of said container into a chamber for chemical vapor deposition;

e) mixing said titanium tetrabromide vapor with ammonia vapor in the vicinity of a heated substrate in said chamber; and

f) depositing the titanium nitride or the titanium-nitride-containing material on a substrate in said chamber.