Manufacturing method for semiconductor device

• US 5,656,511 A
• Filed: 03/06/1995
• Issued: 08/12/1997
• Est. Priority Date: 09/04/1989
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Shindo, Hitoshi
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US08/400,009
• Time in Patent Office: 890 Days
• Field of Search: 437/21, 437/40, 437/41, 437/101, 437/160, 437/162, 437/163, 437/165, 437/233, 437/164, 437/170, 437/172, 437/173, 437/929, 437/907, 437/908, 148/DIG. 91
• US Class Current: 438/160
• CPC Class Codes: H01L 21/2254 from or through or into an applied layer, e.g. photoresist, nitrides
• CPC Class Codes: H01L 21/2258 Diffusion into or out of AIIIBV compounds
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A manufacturing method for a semiconductor device is preferably used for a semiconductor device using SOI (Silicon on Insulation) technology. At minimum, the method includes the following steps: the step of forming a gate electrode on a substrate by using a light-intercepting material; of forming a gate insulating film on the substrate including the gate electrode; of forming a semiconductor layer on the gate insulating film; and of forming a source region and a drain region by virtue of the fact that light, having a wavelength such that the light is absorbed into the semiconductor layer while not being absorbed into the substrate, is irradiated from the back of the substrate, before supplying impurities into the semiconductor layer.

Claims

1. A manufacturing method for a semiconductor device, comprising the steps of:

forming a gate electrode by using light-intercepting material intercepting laser light of a wavelength shorter than a blue light wavelength on a first side of a transparent substrate;

forming a gate insulating film upon the substrate and the gate electrode;

forming a polycrystalline silicon semiconductor layer in an island-shape region to cover said gate electrode on the gate insulating film; and

placing the polycrystalline silicon semiconductor layer within a gas atmosphere including an impurity in order to introduce the impurity into the polycrystalline silicon semiconductor layer, and irradiating, in a scanning manner, a second side of the polycrystalline silicon substrate with laser light having a wavelength which is shorter than a blue-light wavelength and which is absorbed mainly in the semiconductor layer, rather than being absorbed in the substrate, for heating the semiconductor layer so that the impurity in the gas atmosphere is thermally diffused from a surface of the semiconductor layer into the polycrystalline silicon semiconductor layer, to produce a source and a drain region.

2. A method according to claim 1, wherein said light irradiation is performed intermittently.

3. A method according to claim 1, wherein said light transparent substrate includes glass.

4. A method according to claim 3, wherein said light transparent substrate includes quartz glass.

5. A method according to claim 1, wherein the atmosphere including the impurity includes B atoms.

6. A method according to claims 1, wherein said irradiating step and said impurity introducing step are performed simultaneously.

7. A method according to claim 1, further comprising the step of forming electrodes respectively on said source and drain regions.

8. A manufacturing method for semiconductor device, comprising the steps of:

forming a gate electrode on a first side of a substrate by using a light-intercepting material intercepting laser light of wavelength shorter than a blue light wavelength;

forming a gate insulating film on the substrate including the gate electrode;

forming a polycrystalline silicon semiconductor layer island-shaped region covering said gate electrode on the gate insulating film;

injecting a silicon ion into the polycrystalline silicon semiconductor layer to convert the polycrystalline silicon semiconductor layer into an amorphous silicon semiconductor layer;

thermally processing the amorphous silicon for solid-state growth to form a semiconductor layer having dendrite crystal;

forming a boron film on a surface of said semiconductor layer having the dendrite crystal; and

intermittently irradiating a second side of the substrate with laser light having a wavelength shorter than a blue-light wavelength such that the laser light is absorbed into the semiconductor layer, while not being substantially absorbed into the substrate, to heat the semiconductor layer, so that the boron from the boron film is thermally diffused as an impurity through the surface of the semiconductor layer into the semiconductor layer, to form a source region and a drain region.

9. A method according to claim 8, wherein the transparent substrate includes glass.

10. A method according to claim 9, wherein the glass includes quartz glass.