Method for manufacturing salicide semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a gate insulating layer on a monocrystalline silicon substrate;
forming a polycrystalline silicon gate electrode layer on said gate insulating layer;
forming a sidewall insulating layer on a sidewall of said polycrystalline silicon gate electrode layer;
introducing first impurities into said monocrystalline silicon substrate with a mask of said sidewall insulating layer and said polycrystalline silicon gate electrode layer to form impurity diffusion regions in said monocrystalline silicon substrate;
selectively removing an upper portion of said polycrystalline silicon gate electrode layer after said impurity diffusion regions are formed;
forming a metal layer on said etched polycrystalline silicon gate electrode layer and said impurity diffusion regions;
performing a heating operation upon said metal layer so that said metal layer is reacted with said etched polycrystalline silicon gate layer and said impurity diffusion regions to form metal silicide layers; and
removing a portion of said metal layer which is unreacted.
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Accused Products
Abstract
In a method for manufacturing a salicide MOS device, a gate insulating layer and a polycrystalline silicon gate electrode layer are formed on a monocrystalline silicon substrate. A sidewall insulating layer is formed on a sidewall of the gate electrode layer, and impurities are introduced into the substrate with a mask of the sidewall insulating layer and the gate electrode layer, thus forming impurity diffusion regions in the substrate. Then, an upper portion of the gate electrode layer is etched out. Finally, a metal layer is formed on the entire surface, and a heating operation is carried out, so that metal silicide layers are formed on upper portions of the gate electrodes and the impurity diffusion regions. In an alternative embodiment, the gate further comprises an intervening metal nitride layer.
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Citations
21 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate insulating layer on a monocrystalline silicon substrate; forming a polycrystalline silicon gate electrode layer on said gate insulating layer; forming a sidewall insulating layer on a sidewall of said polycrystalline silicon gate electrode layer; introducing first impurities into said monocrystalline silicon substrate with a mask of said sidewall insulating layer and said polycrystalline silicon gate electrode layer to form impurity diffusion regions in said monocrystalline silicon substrate; selectively removing an upper portion of said polycrystalline silicon gate electrode layer after said impurity diffusion regions are formed; forming a metal layer on said etched polycrystalline silicon gate electrode layer and said impurity diffusion regions; performing a heating operation upon said metal layer so that said metal layer is reacted with said etched polycrystalline silicon gate layer and said impurity diffusion regions to form metal silicide layers; and removing a portion of said metal layer which is unreacted. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate insulating layer on a monocrystalline silicon substrate; forming a first polycrystalline silicon layer on said gate insulating layer; forming a metal nitride layer on said first polycrystalline silicon layer; forming a second polycrystalline silicon layer on said metal nitride layer; forming a sidewall insulating layer on a sidewall of said second polycrystalline silicon layer said metal nitride layer and said first polycrystalline silicon layer; introducing first impurities into said monocrystalline silicon substrate with a mask of said sidewall insulating layer and said second polycrystalline silicon layer to form impurity diffusion regions in said monocrystalline silicon substrate; removing said second polycrystalline silicon layer after said impurity diffusion regions are formed; forming a metal layer on said metal nitride layer and said impurity diffusion regions; performing a heating operation upon said metal layer so that said metal layer is reacted with said impurity diffusion regions to form metal silicide layers; and removing a portion of said metal layer which is unreacted. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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Specification