Soft errors handling in EEPROM devices

• US 5,657,332 A
• Filed: 03/20/1995
• Issued: 08/12/1997
• Est. Priority Date: 05/20/1992
• Status: Expired due to Term

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: SanDisk Corporation (Western Digital Corporation)
• Inventors: Mangan, John S., Mehrotra, Sanjay, Guterman, Daniel C., Craig, Jeffrey, Norman, Robert D., Auclair, Daniel L.
• Primary Examiner(s): Gordon, Paul P.
• Assistant Examiner(s): BROWN, THOMAS
• Application Number:
  US08/406,677
• Time in Patent Office: 876 Days
• Field of Search: 371/40.1, 371/21.4, 371/40.2, 365/218, 365/185, 365/184, 365/189.07, 365/189.01, 365/189.08, 365/189.11, 365/900
• US Class Current: 714/763
• CPC Class Codes: G06F 11/1068 in sector programmable memories, e.g. flash disk G06F11/1072 takes precedence
• CPC Class Codes: G06F 11/1072 in multilevel memories
• CPC Class Codes: G06F 2201/81 Threshold
• CPC Class Codes: G11C 16/04 using variable threshold transistors, e.g. FAMOS
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/3431 Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
• CPC Class Codes: G11C 2029/5004 Voltage
• CPC Class Codes: G11C 2029/5006 Current
• CPC Class Codes: G11C 29/028 with adaption or trimming of parameters
• CPC Class Codes: G11C 29/50 Marginal testing, e.g. race, voltage or current testing
• CPC Class Codes: G11C 29/50004 of threshold voltage
• CPC Class Codes: G11C 29/52 Protection of memory contents; Detection of errors in memory contents

Abstract

Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.

Claims

1. A solid-state memory system capable of recovering from read errors, including an array of memory cells, each cell capable of having its threshold voltage programmed to an intended level within a range supported by the memory system, reading means to determine a cell'"'"'s memory state by comparing the cell'"'"'s threshold voltage with a read reference level, wherein through use of the memory system, read errors may be caused by the threshold voltage of one or more cells drifted from its intended level, said solid-state memory system comprising:

error checking means associated with data read from individual group of cells for identifying read errors therein;

means for adjusting the read reference level before each read operation on said individual group of cells containing read errors, each time the read reference level being displaced a predetermined step from a reference level for normal read, until said error checking means no longer indicates read errors; and

writing means for re-writing the drifted threshold voltage of each cell associated with a read error to its intended level.

3. A solid-state memory system capable of recovering from read errors as claims 1-2, wherein said error checking and correcting means is provided by an error correction code.

2. A solid-state memory system capable of recovering from read errors, including an array of memory cells, each cell capable of having its threshold voltage programmed or erased to an intended level within a range supported by the memory system, reading means to determine a cell'"'"'s memory state by comparing the cell'"'"'s threshold voltage with a read reference level, wherein through use of the memory system, read errors may be caused by the threshold voltage of one or more cells drifted from its intended level, said solid-state memory system comprising:

error checking and correcting means associated with data read from individual group of cells for identifying read errors therein and correcting a predetermined maximum number thereof;

means for adjusting the read reference level before each read operation on said individual group of cells containing read errors exceeding said predetermined maximum number, each time the read reference level being displaced a predetermined step from a reference level for normal read, until said error checking and correcting means indicates read errors not exceeding said predetermined maximum number; and

writing means for re-writing the drifted threshold voltage of each cell associated with a read error to its intended level.

4. In a solid-state memory system including an array of memory cells, each cell capable of having its threshold voltage programmed or erased to an intended level within a range supported by the memory system, wherein hard errors may arise from cells with a threshold voltage drifted sufficiently from its intended level to cause read errors, a method for recovering from said hard errors comprising the steps of:

providing an error checking scheme for each of a plurality of groups of cells for identifying read errors therein;

adjusting the read reference level before each read operation on said individual group of cells containing read errors, each time the read reference level being displaced a predetermined step from a reference level for normal read, until said error checking means no longer indicates read errors; and

re-writing the drifted threshold voltage of each cell associated with a read error to its intended level.

6. A method for recovering from said hard errors in a solid-state memory system as in claims 4-5, wherein said error checking and correcting means is provided by an error correction code.

5. In a solid-state memory system including an array of memory cells, each cell capable of having its threshold voltage programmed or erased to an intended level within a range supported by the memory system, wherein hard errors may arise from cells with a threshold voltage drifted sufficiently from its intended level to cause read errors, a method for recovering from said hard errors comprising the steps of:

providing an error checking and correcting scheme for data read from individual group of cells for identifying read errors therein and correcting a predetermined maximum number thereof;

adjusting the read reference level before each read operation on a group of cells containing read errors exceeding said predetermined maximum number, each time the read reference level being displaced a predetermined step from a reference level for normal read, until said error checking and correcting means indicates read errors not exceeding said predetermined maximum number, thereby allowing said error checking and correcting means to correct the read errors; and

re-writing the drifted threshold voltage of each cell associated with a read error to its intended level.

7. A solid-state memory system, comprising:

a plurality of memory cells;

a read circuit that determines a memory cell'"'"'s memory state by comparing the cell'"'"'s programmed threshold voltage with a read reference level set at a predefined level;

a read error detection circuit operated in conjunction with said read circuit that produces a predefined read error indication upon detection of a predefined read error when reading data from individual group of cells; and

an error recovery circuit activated each time a predefined read error is detected to shift the read reference level of said reading circuit by a predetermined step from a reference level for normal read, until said error detection circuit no longer produces a predefined read error indication.

8. A solid-state memory system as in claim 7, wherein said error recovery circuit is deactivated when a predefined condition is reached.

9. A solid-state memory system as in claim 8, wherein said predefined condition includes when said read circuit read the data without indication of read errors.

10. A solid-state memory system as in claims 8-9, further comprising a write circuit that re-writes said data to said group of cells after said predefined condition is reached.

11. A solid-state memory system as in claims 7-8, wherein said error detection circuit includes error correction codes.