Apparatus for monitoring the dry etching of a dielectric film to a given thickness in an integrated circuit

• US 5,658,418 A
• Filed: 09/29/1995
• Issued: 08/19/1997
• Est. Priority Date: 03/31/1995
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation, Sofie Instruments, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Coronel, Philippe, Canteloup, Jean
• Primary Examiner(s): Tung, T.
• Application Number:
  US08/536,900
• Time in Patent Office: 690 Days
• Field of Search: 156/626.1, 156/643.1, 156/646.1, 156/345, 216/58, 216/60, 216/65-67, 216/85
• US Class Current: 156/345.25
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32972 Spectral analysis

Abstract

Detecting the desired etch end point in the dry etching of a structure that includes a dielectric film formed onto a substrate down to a given thickness Ef. The structure is placed in the chamber of an etching equipment provided with a view-port. A light source illuminates a portion of the structure at a normal angle of incidence through the view-port. The light contains at least two specified wavelengths (L1, L2) whose value is greater than a minimum value equal to 4*N*e (wherein N is the index of refraction and e the thickness error of the dielectric). The reflected light is applied to spectrometers tuned to each specified wavelength, for converting the reflected light into interference signals that are processed and analyzed in a dedicated unit to generate primary signals (S1, S2). An analysis of the primary signals is performed after a predetermined delay. For each wavelength, a pre-selected extremum of the primary signal is detected and a predetermined number of extrema is counted. The counting stops when the last extremum just before Ef is reached. As a result, the distance D between the last extremum and the given thickness is now determined. The etch rate ER is also measured in-situ before the last extremum.

Claims

1. An apparatus for etching a semiconductor substrate having an insulating layer formed thereon, the apparatus automatically terminating etching upon reaching a predetermined thickness Ef of the insulating layer, comprising:

an etch chamber having a view-port formed in one wall thereof, wherein the substrate is inserted to receive an etch treatment;

light source means for generating light having at least two wavelengths, said wavelengths having a value greater than 4*N*e, wherein N is the refractive index of said insulating layer and e is the thickness error of said insulating layer;

optical means for transporting light from said light source means to illuminate an area of said substrate, wherein said light shines through said view port at a substantially normal angle of incidence, and for collecting said light reflected from said insulated substrate;

coupled to said optical means, spectrometer means tuned to a predetermined wavelength for converting said reflected light into at least two analog interference signals having an intensity that varies with a reaction time; and

signal processing and analyzing means comprising;

means for digitizing said analog interference signals to generate respective digital primary signals;

means for initiating an analysis of said primary signals, said analysis being initiated a predetermined amount of time after said etching has begun and defining a selected extremum for each of said primary signals;

means for counting a predetermined number of said extrema starting from said selected extremum and up to the last of said extremum of each of said primary signals prior to reaching said predetermined thickness Ef of said insulating layer;

means for determining a distance between said last extremum and said preselected thickness;

means for measuring in-situ etch rates for each of said primary signals;

means for analyzing symmetry of waveforms of said primary signals and said etch rate variations to identify a singular of said waveforms that is best adapted to the composition of said dielectric layer;

means for determining a remaining time for the selected said primary signal; and

means for terminating said etching process upon elapse of said remaining time.

2. The apparatus as in claim 1, wherein operations performed by said signal processing and analyzing means are performed on a signal derived from said primary signals by numeric filtering.

3. The apparatus as in claim 1, wherein said light source means is a multi-wavelength light source.

4. The apparatus as in claim 3, wherein said multi-wavelength light source is selected from the group that consists of a mercury, a halogen and a xenon polychromatic light source.

5. The apparatus as in claim 3, wherein said multi-wavelength light source comprises a plurality of lasers, each having a determined wavelength.

6. The apparatus as in claim 3, wherein said multi-wavelength light source comprises at least one monochromatic laser and one polychromatic light source.

7. The apparatus as in claim 1, wherein said optical means includes a condenser lens.

8. The apparatus as in claim 1, wherein one of said wavelengths is combined with said illumination of said area of said substrate.