Semiconductor laser diode and manufacturing method therefor

• US 5,658,823 A
• Filed: 12/20/1994
• Issued: 08/19/1997
• Est. Priority Date: 08/27/1994
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Yang, Seung-kee
• Primary Examiner(s): KUNEMUND, ROBERT M
• Application Number:
  US08/359,657
• Time in Patent Office: 973 Days
• Field of Search: 437/129
• US Class Current: 438/38
• CPC Class Codes: H01S 5/02476 Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
• CPC Class Codes: H01S 5/04252 characterised by the material
• CPC Class Codes: H01S 5/04254 characterised by the shape
• CPC Class Codes: H01S 5/2081 using special etching techniques
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/2214 based on oxides or nitrides
• CPC Class Codes: H01S 5/2231 with inner confining structure only between the active layer and the upper electrode

Abstract

A self-align structured laser diode and manufacturing method including the steps of forming a multiple epitaxy layer including an activation layer on a semiconductor substrate; forming a rectangular ridge on a top surface of the multiple epitaxy layer; depositing a passivation layer having a predetermined thickness on the multiple epitaxy layer having the ridge; depositing a photoresist on the passivation layer; exposing the entire photoresist on the top surface of the ridge or the portion of the entire photoresist overlapping the top surface of the ridge and the upper portion of the photoresist deposited on the side surface of the ridge perpendicular to the top surface of the ridge to a predetermined depth; removing the exposed portion of the photoresist; removing the exposed passivation layer; removing the photoresist that remains in both sides of the ridge; and forming a current injection layer in the top surface of the resultant structure.

Claims

1. A method for manufacturing a ridge-type laser diode having an activation layer on a semiconductor substrate, said method comprising the steps of:

forming a multiple epitaxy layer including an activation layer on the semiconductor substrate;

forming a rectangular ridge on a top surface of said multiple epitaxy layer;

depositing a passivation layer having a predetermined thickness on the multiple epitaxy layer having said ridge;

depositing a photoresist layer on said passivation layer such that the thickness of the deposited photoresist layer is thinner over said ridge than beside said ridge;

flood exposing said photoresist layer to a predetermined depth such that the entire portion of said photoresist layer on the top surface of said ridge or the portion of the entire portion of said photoresist layer overlapping the top surface said ridge and the upper portion of the photoresist layer deposited on the side surface of said ridge perpendicular to the top surface of said ridge is exposed;

removing the exposed portion of said photoresist layer;

removing the exposed passivation layer;

removing the photoresist that remains on both sides of said ridge; and

forming a current injection layer in the top surface of the resultant structure.

2. A method for manufacturing a laser diode comprising the steps of:

forming a ridge by etching a substrate, and depositing a epitaxy layer including an activation layer on said ridge while maintaining the ridge structure;

forming a passivation layer on the epitaxy layer while maintaining the ridge structure;

depositing a photoresist layer on said passivation layer such that the thickness of the deposited photoresist layer is thinner over said ridge than beside said ridge;

flood exposing said photoresist layer to a predetermined depth such that the entire portion of said photoresist layer on the top surface of said ridge or the portion of the entire portion of said photoresist layer overlapping the top surface of said ridge and the upper portion of the photoresist layer deposited on the side surface of said ridge perpendicular to the top surface of said ridge is exposed;

removing the exposed portion of said photoresist layer;

removing the exposed passivation layer;

removing the photoresist that remains on both sides of said ridge; and

forming a current injection layer in the top surface of the resultant structure.

3. A method for manufacturing a double channel ridge type laser diode having an activation layer on a semiconductor substrate, said method comprising the steps of:

forming a multiple epitaxy layer including an activation layer on the semiconductor substrate;

forming the double channel structured ridge on a top surface of said multiple epitaxy layer;

depositing a passivation layer having a predetermined thickness on said multiple epitaxy layer;

depositing a photoresist layer on said passivation layer such that the thickness of the deposited photoresist layer is thinner over said ridge than beside said ridge;

exposing the portion of the entire photoresist layer overlapping the top surface of said ridge or the entire portion of the photoresist layer overlapping the top end surface of said ridge and the upper portion of the photoresist deposited on the side surface of said ridge at the direction perpendicular to the top end surface of said ridge to a predetermined depth;

removing the exposed portion of said photoresist layer;

removing the exposed passivation layer;

removing the photoresist that remains on both sides of said ridge; and

forming a current injection layer in the top surface of the resultant structure.