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Sense amplifier having a circuit for compensating for potential voltage drops caused by parasitic interconnections

  • US 5,659,260 A
  • Filed: 02/20/1996
  • Issued: 08/19/1997
  • Est. Priority Date: 08/06/1993
  • Status: Expired due to Fees
First Claim
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1. A semiconductor circuit device comprising:

  • a ground node for receiving a ground potential,a sense amplifier including a PMOS transistor and an NMOS transistor coupled to said ground node,negative power supply means for generating a negative potential lower than said ground potential,a switching NMOS transistor provided between said NMOS transistor of said sense amplifier and said negative power supply means, andone shot pulse generation means for applying a one shot pulse signal to a gate of said switching NMOS transistor.

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