Magnetron plasma processing apparatus and processing method

• US 5,660,671 A
• Filed: 06/28/1994
• Issued: 08/26/1997
• Est. Priority Date: 09/29/1990
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited, Kabushiki Kaisha Toshiba (Toshiba Corporation), Toshiba Corporation
• Original Assignee: Tokyo Electron Limited, Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Harada, Hiromi, Horioka, Keiji, Okumura, Katsuya, Yoshida, Yukimasa, Arami, Junichi, Kubota, Sinji, Okano, Haruo, Kumagai, Hiromi, Hasegawa, Isahiro
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US08/266,635
• Time in Patent Office: 1,155 Days
• Field of Search: 156/643.1, 156/345, 118/723 E, 204/298.34, 204/298.37, 204/298.31, 204/298.02, 204/298.06, 204/298.08, 204/298.16, 216/71
• US Class Current: 156/345.46
• CPC Class Codes: H01J 2237/3344 isotropy
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/3266 Magnetic control means
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering
• CPC Class Codes: H01J 37/3452 Magnet distribution
• CPC Class Codes: H01J 37/3494 Adaptation to extreme pressure conditions

Abstract

A magnetron plasma processing apparatus includes, a vacuum chamber storing an etching object, a first electrode which is provided in the vacuum chamber and holds the etching object, a second electrode which is disposed in opposition from the first electrode and parallel with the first electrode. A gas-supply unit feeding etching gas to the vacuum chamber while, a magnetic-field generating means is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit feeds power to either the first or second electrodes and generates discharge between the electrodes. The magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.

Claims

1. A magnetron plasma processing apparatus comprising:

a vacuum chamber which stores an etching object;

a pair of parallel electrodes respectively provided in said vacuum chamber and having a first electrode holding said etching object and a second electrode being opposite from said first electrode;

a third electrode which surrounds said first electrode and is grounded;

gas-supply means for supplying gas to said vacuum chamber;

magnetic-field generating means, which is opposite from said first electrode in opposition from said second electrode, the magnetic field generation means having a configuration for generating a magnetic field parallel with the upper surface of said etching object between said pair of parallel plane electrodes;

means for rotating the magnetic field generating means to rotate the magnetic field; and

power-supply means for supplying power to at least either of said first and second electrodes and generating discharge between said pair of parallel plane electrodes;

wherein said power-supply means has means for supplying power to said first and second electrodes.

2. A magnetron plasma processing apparatus comprising:

a vacuum chamber which stores an etching object;

first and second electrodes positioned in the vacuum chamber in a parallel relationship, the first electrode supporting said etching object, a top surface of said etching object facing the second electrode;

a high-frequency power source for outputting an oscillating output;

a means for supplying the oscillating output outputted from the high-frequency power source to the first and second electrodes, respectively; and

means provided to the supplying means, for adjusting a relative phase of the oscillating output supplied to the first and second electrodes, to maintain a stable discharge between the first and second electrodes.

3. A magnetron plasma processing apparatus according to claim 2, wherein said supplying means comprises:

a first connecting means for electrically connecting the high-frequency power source to the first electrode, and

a second connecting means for electrically connecting the high-frequency power source to the second electrode; and

said phase adjusting means provided to the second connecting means for adjusting phase of oscillated frequency supplied to the second electrode.

4. A magnetron plasma processing apparatus according to claim 3, which includes impedance matching circuits respectively provided to the first and second connecting means.

5. A magnetron plasma processing apparatus according to claim 4, which includes amplifiers respectively provided to the first and second connecting means.