In-situ monitoring of conductive films on semiconductor wafers
First Claim
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1. An apparatus for in-situ monitoring of chemical-mechanical polishing a conductive film on a front side of a semiconductor wafer using a tool including a metal wafer carrier which holds the wafer by a back side opposite the front side, comprising:
- a sensor positioned in the carrier proximate the back side of the wafer, the sensor including(a) an inductor for inducing a current in the film by producing an alternating electromagnetic field proximate the film, and(b) means for shaping the alternating electromagnetic field so that the field is unaffected by the carrier;
a capacitor electrically coupled to the inductor; and
detecting means for detecting a change in the current due to a change in the thickness of the film, the detecting means electrically coupled to the sensor and the capacitor.
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Abstract
The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.
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Citations
64 Claims
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1. An apparatus for in-situ monitoring of chemical-mechanical polishing a conductive film on a front side of a semiconductor wafer using a tool including a metal wafer carrier which holds the wafer by a back side opposite the front side, comprising:
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a sensor positioned in the carrier proximate the back side of the wafer, the sensor including (a) an inductor for inducing a current in the film by producing an alternating electromagnetic field proximate the film, and (b) means for shaping the alternating electromagnetic field so that the field is unaffected by the carrier; a capacitor electrically coupled to the inductor; and
detecting means for detecting a change in the current due to a change in the thickness of the film, the detecting means electrically coupled to the sensor and the capacitor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. An apparatus for in-situ monitoring of a process for changing the thickness of a conductive film from a front side of a semiconductor wafer using a tool including a metal wafer support means which supports the wafer by a back side opposite the front side, comprising:
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a sensor positioned in the support means proximate the back side of the wafer, the sensor including (a) an inductor for inducing a current in the film by producing an alternating electromagnetic field proximate the film, and (b) means for shaping the alternating electromagnetic field so that the field is unaffected by the support means; a capacitor electrically coupled to the inductor; and detecting means for detecting a change in the current due to a change in the thickness of the film, the detecting means electrically coupled to the sensor and the capacitor. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64)
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Specification