High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
First Claim
1. A method of making a green-blue to ultraviolet light-emitting diode comprising forming a green-blue to ultraviolet light emitting material selected from the group consisting of:
- GaN;
MGaN; and
MM'"'"'GaNwherein;
M is a metal which is compatible with Ga and N in the composition MGaN and the composition MGaN is stable at 25°
C. and one atmosphere pressure conditions, andM'"'"' is a compatible metal providing quaternary compounds of the formula M1-x-y M'"'"'y Gax N, wherein x and y range from 0 to 1, on a base structure comprising a SiC substrate selected from the group consisting of 2H--SiC, 4H--SiC and a-axis oriented 6H--SiC.
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Accused Products
Abstract
A green-blue to ultraviolet light-emitting optical device, e.g. a green-blue to ultraviolet emitting laser or a green-blue to ultraviolet emitting diode, comprising a green-blue to ultraviolet light emitting gallium nitride material on a base structure including a silicon carbide substrate, which preferably consists of 2H--SiC, 4H--SiC, or a-axis oriented 6H--SiC. The carrier mobility and the transparency of the silicon carbide substrate are optimized by the selection of orientation and polytype, thus enhancing device performance. The light-emitting diodes may incorporate a structural modification to increase the light output comprising a dielectric Bragg mirror beneath the LED structure, made of alternating layers of AlN, GaN, InN or their alloys. Methods for making such light-emitting diodes are provided, including a technique for defining individual devices by mesa etching which avoids possible damage to the active area during dicing.
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Citations
15 Claims
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1. A method of making a green-blue to ultraviolet light-emitting diode comprising forming a green-blue to ultraviolet light emitting material selected from the group consisting of:
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GaN; MGaN; and MM'"'"'GaN wherein; M is a metal which is compatible with Ga and N in the composition MGaN and the composition MGaN is stable at 25°
C. and one atmosphere pressure conditions, andM'"'"' is a compatible metal providing quaternary compounds of the formula M1-x-y M'"'"'y Gax N, wherein x and y range from 0 to 1, on a base structure comprising a SiC substrate selected from the group consisting of 2H--SiC, 4H--SiC and a-axis oriented 6H--SiC. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification