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Vertical interconnect process for silicon segments

  • US 5,661,087 A
  • Filed: 06/07/1995
  • Issued: 08/26/1997
  • Est. Priority Date: 06/23/1994
  • Status: Expired due to Term
First Claim
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1. A method for forming a stack of segments, comprising the steps of:

  • providing a wafer having a plurality of die;

    creating a plurality of segments, each one of said plurality of segments formed by grouping a plurality of adjacent ones of said die on said wafer;

    interconnecting said plurality of adjacent die on said each one of said plurality of segments;

    separating said each one of said plurality of segments from said wafer;

    placing said plurality of segments on top of one another to create a stack of segments, said stack having external vertical sides; and

    electrically interconnecting said stack of segments.

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