×

Method for bonding compound semiconductor wafers to create an ohmic interface

  • US 5,661,316 A
  • Filed: 09/20/1996
  • Issued: 08/26/1997
  • Est. Priority Date: 01/18/1994
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device having at least one wafer bonded unipolar interface, the wafer bonded unipolar interface formed by applying uniaxial pressure at a predefined temperature, the wafer bonded unipolar interface passing current from a first semiconductor layer to a second semiconductor layer with a minimal voltage drop, at least one of the first and second semiconductor layers comprising a compound semiconductor, the surface misorientation of the layers being less than 6 degrees in magnitude and the rotational misalignment of the crystallographic directions in the plane of the wafer bonded unipolar interface being less than 20 degrees in magnitude, for a predefined crystal orientation and all crystallographically equivalent orientations between the first and second semiconductor layers.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×