Substrate for integrated components comprising a thin film and an intermediate film

• US 5,661,333 A
• Filed: 01/25/1995
• Issued: 08/26/1997
• Est. Priority Date: 01/26/1994
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Original Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Inventors: Bruel, Michel, Biasse, Beatrice
• Primary Examiner(s): Saadat, Mahshid D.
• Assistant Examiner(s): Wallace, Valencia Martin
• Application Number:
  US08/377,835
• Time in Patent Office: 944 Days
• Field of Search: 257/618, 257/619, 257/622, 257/714, 257/715
• US Class Current: 257/618
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding

Abstract

A substrate for integrated components including a support structure and a thin non-conductive film. An intermediate film is placed between the support structure and the thin non-conductive film. The intermediate film is a sacrificial film which may be removed chemically. By doing so, the thin non-conductive film may be liberated from the support structure. The intermediate film is traversed by channels which carry the chemicals for removing the sacrificial film. The channels may form a grid on the surface of the intermediate film.

Claims

1. Substrate for integrated components comprising a support structure and a thin nonconductive film for embodying the integrated components disposed on said structure, wherein the substrate further comprises an intermediate sacrificial film made of a material which may be chemically removed between the support structure and the thin film, so as to liberate the thin nonconductive film, the intermediate sacrificial film being traversed by at least one chemical attack channel forming a groove.

2. Substrate according to claim 1, wherein the chemical attack channel is closed by a border of the intermediate film.

3. Substrate according to claim 1, wherein the intermediate film is traversed by channels forming an orthogonal network.

4. Substrate according to claim 3, wherein the network has a pitch of 100 μ

m and the channels a width of 10 μ

m.

5. Substrate according to claim 1, wherein the thin film is made of a semiconductive or nonconducting material.

6. Substrate according to claim 1, wherein the thin film is a film of monocrystalline silicon with a thickness of about 1 μ

m.

7. Substrate according to claim 1, wherein the thin film is formed of a set of sub-films, at least one of said sub-films being made of a semiconductive or nonconducting material.

8. Substrate according to claim 1, wherein the intermediate film is a film of silicon oxide with a thickness of about 10 μ

m.

9. Substrate according to claim 2, wherein the border has a width of about 4 mm.