Semiconductor device having a single-crystal metal wiring
First Claim
1. A semiconductor device comprising:
- an insulator in which there is formed a plurality of groove portions, each of which is kept separate one from the other and having a predetermined shape; and
single-crystal electrode interconnections, filled in the groove portions, each of which differs in crystal orientation thereof.
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Abstract
The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed; and agglomerating the metal film by in-situ annealing, wherein agglomeration of the metal film is started before the metal film reacts with the surface of the substrate due to annealing, while formation of a native oxide on the metal film is suppressed, and whereby the metal film is filled into the groove by annealing at a predetermined temperature for a predetermined period of time. The structure of the semiconductor device includes an insulator in which there is formed a groove portion having a predetermined pattern shape and an electrode interconnection made of a single-crystal metal which is filled in the groove portion.
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Citations
3 Claims
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1. A semiconductor device comprising:
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an insulator in which there is formed a plurality of groove portions, each of which is kept separate one from the other and having a predetermined shape; and single-crystal electrode interconnections, filled in the groove portions, each of which differs in crystal orientation thereof.
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2. A semiconductor device comprising:
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an insulator in which there is formed a groove portion having a predetermined pattern shape; and an electrode interconnection made of a single-crystal metal which is filled in the groove portion, and a wettability improving layer of polycrystalline or amorphous material is formed between the insulator and the single-crystal metal.
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3. A semiconductor device comprising:
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a first insulator in which there is formed a groove portion having a predetermined pattern shape; a second insulator in which there is formed a groove portion having a predetermined pattern shape; a first electrode interconnection made of a single-crystal metal which is filled in the groove portion in the first insulator; and a second electrode interconnection made of a single-crystal metal which is filled in the groove portion in the second insulator, and the first and second electrode interconnections are connected with a single-crystal metal which has a same crystal orientation as the first and second electrode interconnections.
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Specification