Real-time in-line testing of semiconductor wafers

• US 5,661,408 A
• Filed: 03/01/1995
• Issued: 08/26/1997
• Est. Priority Date: 03/01/1995
• Status: Expired due to Term

• Current Assignee: Semilab Semiconductor Physics Laboratory Co., Ltd. (Euroventures Capital Tanacsad Kft)
• Original Assignee: QC Solutions, Inc.
• Inventors: Kamieniecki, Emil, Ruzyllo, Jerzy
• Primary Examiner(s): Karlsen, Ernest F.
• Application Number:
  US08/396,694
• Time in Patent Office: 909 Days
• Field of Search: 324/765, 324/767, 324/768, 324/769, 324/752
• US Class Current: 324/750.23
• CPC Class Codes: G01R 31/2648 Characterising semiconductor materials testing of materials or semi-finished products G01R31/2831; testing during manufacture H01L22/00
• CPC Class Codes: G01R 31/2656 using non-ionising electromagnetic radiation, e.g. optical radiation
• CPC Class Codes: G01R 31/2831 Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates G01R31/318511 takes precedence; testing during manufacture H01L22/00
• CPC Class Codes: H01L 22/10 Measuring as part of the manufacturing process burn-in G01R31/2855
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.

Claims

1. An apparatus for the real-time, in-line testing of a semiconductor wafer, having a first surface and a second surface, during semiconductor processing, said apparatus comprising:

a head assembly comprising;

a modulated light source exposing at least a portion of said semiconductor wafer to light of a predetermined wavelength and modulated at a predetermined frequency; and

a voltage sensor comprising a plurality of electrodes positioned adjacent said first surface to detect a surface photovoltage induced at said first surface of said semiconductor wafer in response to said light from said modulated light source without contacting said wafer, said plurality of electrodes sufficient for detecting said surface photovoltage on said first surface; and

a conveying apparatus conveying said wafer adjacent said voltage sensor of said head assembly during said semiconductor processing.

2. The apparatus of claim 1 wherein said wafer and said head assembly are in continuous relative motion during said detection of said surface photovoltage by said voltage sensor.

3. The apparatus of claim 1 wherein said head assembly has a longitudinal axis and the orthogonality of said longitudinal axis of said head assembly with respect to said surface of said wafer is adjustable.

4. The apparatus of claim 3 wherein said orthogonality of said longitudinal axis is adjustable manually by set screws.

5. The apparatus of claim 3 wherein said orthogonality of said longitudinal axis is adjustable automatically by actuators.

6. The apparatus of claim 2 wherein said head assembly is stationary and said wafer is moved continuously relative to said head assembly.

7. The apparatus of claim 6 wherein said conveying apparatus is a conveyor belt.

8. The apparatus of claim 6 wherein said conveying apparatus is a robotic arm.

9. The apparatus of claim 6 wherein said conveying apparatus is a wafer chuck.

10. The apparatus of claim 9 wherein said wafer chuck is insulated from said wafer and is grounded.

11. The apparatus of claim 6 wherein said conveying apparatus conveys said wafer beneath said voltage sensor of said head assembly.

12. The apparatus of claim 1 wherein said conveying apparatus is biased by a DC voltage.

13. The apparatus of claim 12 wherein said bias DC voltage is substantially between -1000 and 1000 volts.

14. The apparatus of claim 1 wherein said conveying apparatus conveys said wafer above said voltage sensor of said head assembly.

15. The apparatus of claim 1 further comprising:

a light splitting device positioned between said modulated light source and said wafer, said light splitting device passing a first portion of said modulated light from said modulated light source onto said wafer; and

a position photodiode positioned to receive light reflected by said wafer and reflected by said light splitting device,

said position photodiode producing a location signal in response to said wafer reflecting said modulated light.

16. The apparatus of claim 15 wherein said light splitting device is a beam splitter.

17. The apparatus of claim 15 wherein said position photodiode detects the edge of said wafer by said reflected light and said voltage sensor measures said surface photovoltage in response to said location signal.

18. The apparatus of claim 15 further comprising a collimating lens collimating said modulated light from said modulated light source.

19. The apparatus of claim 18 wherein said collimating lens is positioned between said modulated light source and said light splitting device.

20. The apparatus of claim 1 further comprising:

a position sensor providing electrical signals in response to the position of said head assembly relative to said wafer; and

a head assembly positioner moving said head assembly toward and away from said wafer in response to electrical signals received from said position sensor indicating the position of said head assembly relative to said wafer.

21. The apparatus of claim 20 wherein said position sensor comprises at least one position electrode and said surface photovoltage sensor comprises a surface photovoltage electrode in electrical communication with a surface photovoltage preamplifier.

22. The apparatus of claim 21 wherein said surface photovoltage electrode is connected to said surface photovoltage preamplifier by at least one flexible contact.

23. The apparatus of claim 21 wherein an approximately 70 kHz signal is supplied to said at least one position electrode.

24. The apparatus of claim 1 wherein said modulated light source is a light emitting diode (LED).

25. The apparatus of claim 24 wherein said modulated light source is modulated at approximately 40 kHz.

26. The apparatus of claim 21 further comprising:

an insulator having a first side and a second side and at least one side wall connecting said first side and said second side,

wherein said surface photovoltage electrode is deposited upon the first side of said insulator.

27. The apparatus of claim 26 wherein a contact electrode is deposited on said second side of said insulator, said contact electrode in electrical communication with said surface photovoltage electrode by conductors deposited on said side wall between said contact electrode and said surface photovoltage electrode.

28. The apparatus of claim 26 wherein said surface photovoltage electrode is covered with a thin insulated coating.

29. The apparatus of claim 28 wherein said thin insulating coating is thinner than the distance between the voltage electrode and said wafer during said detection of said surface photovoltage.

30. The apparatus of claim 21 further comprising:

an insulator having a first side and a second side and at least one side wall connecting said first side and said second side,

wherein said at least one position electrode is deposited upon said first side of said insulator.

31. The apparatus of claim 30 wherein at least one contact electrode is deposited on said second side of said insulator, said at least one contact electrode in electrical communication with a respective one of said at least one position electrode by conductors deposited on said side wall between each said at least one contact electrode and said respective one of said at least one position electrode.

32. The apparatus of claim 30 wherein said at least one position electrode is covered with a thin insulated coating.

33. The apparatus of claim 20 further comprising:

a computer comprising a data acquisition circuit and a position control circuit;

a position measuring circuit in electrical communication with said data acquisition circuit and in electrical communication with said position sensor; and

a surface photovoltage measuring circuit in electrical communication with said data acquisition circuit, in electrical communication with said modulated light source and in electrical communication with said surface photovoltage sensor,

said head assembly positioner moving said head assembly toward and away from said wafer in response to signals from said position control circuit, generated in response to said signal from said position measuring circuit,

said computer determining electrical characteristics of said wafer in response to said signals acquired by said data acquisition circuit from said surface photovoltage measuring circuit.

34. The apparatus of claim 33 wherein said position measuring circuit comprises:

a lock-in amplifier having an input terminal, a reference terminal and an output terminal; and

an oscillator in electrical communication with said position sensor and in electrical communication with said reference terminal of said lock-in amplifier,

said position sensor in electrical communication with said input terminal of said lock-in amplifier,

said output terminal of said lock-in amplifier in electrical communication with said data acquisition circuit.

35. The apparatus of claim 33 wherein said surface photovoltage measuring circuit comprises:

a lock-in amplifier having an input terminal, a reference terminal and an output terminal; and

an oscillator in electrical communication with said modulated light source and in electrical communication with said reference terminal of said lock-in amplifier,

said voltage sensor in electrical communication with said input terminal of said lock-in amplifier;

said output terminal of said lock-in amplifier in electrical communication with said data acquisition circuit.

36. The apparatus of claim 35 wherein said surface photovoltage measuring circuit further comprises said position sensor in electrical communication with electrical ground.

37. The apparatus of claim 1 further comprising a corona source charging said wafer to form an inversion layer prior to moving said wafer adjacent said surface photovoltage sensor.

38. The apparatus of claim 37 wherein said corona source comprises a control loop to prevent the overcharging of said wafer.

39. The apparatus of claim 37 further comprising a charge neutralizing device for discharging said wafer after said voltage sensor has measured said surface photovoltage.