Semiconductor laser
First Claim
1. A semiconductor laser including:
- a n type GaAs semiconductor substrate;
an n type AlGaAs cladding layer;
an active layer producing light having a wavelength no shorter than 900 nm;
a p type AlGaAs cladding layer having an Al composition ratio; and
an n type AlGaAs current blocking layer having a current concentrating structure, the n type AlGaAs current blocking layer comprising Alx Ga1-x Al having an Al composition ratio x smaller than the Al composition ratio of the p type AlGaAs cladding layer, the current blocking layer being doped with Si in a concentration no smaller than 1×
1019 cm-3, and the current concentrating structure being a ridge structure comprising the p type AlGaAs cladding layer and having a striped-shaped ridge structure, and the n type AlGaAs current blocking layer disposed on both sides of the ridge of the p-type AlGaAs cladding layer.
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Accused Products
Abstract
A semiconductor laser includes an n type GaAs semiconductor substrate, an n type AlGaAs cladding layer, an active layer producing light having a wavelength equal to or larger than 900 nm, a p type AlGaAs cladding layer, and an n type AlGaAs current blocking layer having a current concentrating structure. The n type AlGaAs current blocking layer comprises Alx Ga1-x As having an Al composition ratio x smaller than an Al composition ratio of the p type AlGaAs cladding layer, and is doped with Si to a concentration equal to or larger than 1×1019 cm-3. Therefore, since more VIII -SiGa complexes C are produced in the AlGaAs current blocking layer than those produced when the current blocking layer is GaAs and absorption of light having a wavelength of 0.9˜1.2 μm is promoted, generation of higher-order modes is reliably suppressed and laser light having a fundamental mode is stably produced. Consequently, a semiconductor laser for exciting a fiber amplifier and excellent as a pumping light source of an optical fiber is realized.
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Citations
4 Claims
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1. A semiconductor laser including:
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a n type GaAs semiconductor substrate; an n type AlGaAs cladding layer; an active layer producing light having a wavelength no shorter than 900 nm; a p type AlGaAs cladding layer having an Al composition ratio; and an n type AlGaAs current blocking layer having a current concentrating structure, the n type AlGaAs current blocking layer comprising Alx Ga1-x Al having an Al composition ratio x smaller than the Al composition ratio of the p type AlGaAs cladding layer, the current blocking layer being doped with Si in a concentration no smaller than 1×
1019 cm-3, and the current concentrating structure being a ridge structure comprising the p type AlGaAs cladding layer and having a striped-shaped ridge structure, and the n type AlGaAs current blocking layer disposed on both sides of the ridge of the p-type AlGaAs cladding layer. - View Dependent Claims (2)
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3. A semiconductor laser including;
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a n type GaAs semiconductor substrate; an n type AlGaAs cladding layer; an active layer producing light having shorter than 900 nm; a p type AlGaAs cladding layer having an Al composition ratio; and an n type AlGaAs current blocking layer having a current concentrating structure, the n type AlGaAs current blocking layer comprising Alx Ga1-x Al having an Al composition ratio x smaller than the Al composition ratio of the p type AlGaAs cladding layer, the current blocking layer being doped with Si in a concentration no smaller than 1×
1019 cm-3, and the current concentrating structure being an SAS (self-aligned structure) structure comprising the n type AlGaAs current blocking layer having a central stripe groove, and the p type GaAs cladding layer disposed on the n type AlGaAs current blocking layer including the stripe groove. - View Dependent Claims (4)
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Specification