Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks

• US 5,662,770 A
• Filed: 04/16/1993
• Issued: 09/02/1997
• Est. Priority Date: 04/16/1993
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Donohoe, Kevin G.
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US08/048,991
• Time in Patent Office: 1,600 Days
• Field of Search: 156/643, 156/345, 156/643.1, 204/298.31, 204/298.34, 216/68, 216/69, 216/71, 118/723 MR, 118/723 ER
• US Class Current: 438/716
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/32642 Focus rings
• CPC Class Codes: Y10S 156/915 Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Abstract

This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the wafer chuck). The invention addresses the uniformity problem which arises as the result of nonuniform power coupling between the wafer and the walls of the etch chamber. The solution to greatly mitigate the nonuniformity problem is to increase the impedance between the wafer and the chamber walls. This may be accomplished by placing a cylindrical dielectric wall around the wafer. Quartz is a dielectric material that is ideal for the cylindrical wall if silicon is to be etched selectively with respect to silicon dioxide, as quartz it is virtually inert under such conditions.

Claims

1. A method of etching a wafer in a high density source plasma etch reactor, comprising:

(a) providing a high density source plasma etch reactor having;

walls defining an etch chamber,

a plasma source chamber remote from, and in communication with, said etch chamber for providing a plasma to said etch chamber, and

a wafer chuck disposed in said etch chamber for seating a wafer,

(b) disposing a wafer on the wafer chuck;

(c) forming a plasma within the plasma source chamber and providing this plasma to said etch chamber;

(d) applying electrical energy to the wafer chuck for assisting etching of said wafer, thereby forming electric fields between an upper surface of said wafer and said walls of said etch chamber; and

(e) providing a dielectric wall around a periphery of said wafer, said dielectric wall having walls that extend above a plane defined by the upper surface of said wafer, thereby affecting an electromagnetic characteristic impedance for electromagnetic fields coupled between an upper peripheral surface of said wafer and said walls of said etch chamber.

2. A method according to claim 1, wherein said dielectric wall comprises quartz.

3. A method according to claim 1, wherein said dielectric wall comprises a material that does not adversely affect the etching of said wafer.

4. A method according to claim 3, wherein said peripheral wall comprises a material etchable by the plasma during etching of said wafer.

5. A method according to claim 1, wherein said step (d) comprises providing a given magnitude for said electrical energy so as to establish a power density of less than 330 (mW/cm²) over said wafer.

6. A method according to claim 1, wherein said step (d) comprises providing a given magnitude for said electrical energy so as to establish a power density of less than 520 (mW/cm²) over said wafer.

7. A method according to claim 1, wherein said high density source plasma reactor further comprises a clamping ring for holding a wafer to the wafer chuck, and said step (b) comprises capturing an outer peripheral edge of the wafer with the clamping ring and pressing the outer peripheral edge of the wafer against the wafer chuck for securing the wafer thereto.

8. A method of operating a high density source plasma etch reactor for etching a substrate, comprising:

(a) providing a high density source plasma etch reactor with;

walls defining an etch chamber,

a plasma source chamber to form a plasma therein, said plasma source chamber being in communication with said etch chamber for supplying plasma thereto, and

a wafer chuck disposed concentrically within the walls of said etch chamber;

(b) seating a substrate on the wafer chuck;

(c) providing a dielectric wall in concentric relationship to said substrate, a wall of the dielectric wall extending above a plane defined by an upper surface of said substrate;

(d) forming a plasma in said plasma source chamber; and

(e) providing electrical energy to the wafer chuck so as to form electric fields between an upper surface of said substrate and said walls of said etch chamber;

wherein the wall of said dielectric wall is provided a height sufficient to cause portions of said electric fields associated with a peripheral region of the upper surface of said substrate to traverse said dielectric wall, thereby affecting a power density distribution as produced by said electrical energy across the upper surface of said substrate.

9. A method according to claim 8,

wherein the high density source plasma etch reactor further includes a clamping ring;

and

said step (b) of seating comprises clamping an outer peripheral edge of said substrate against the wafer chuck using the clamping ring.

10. A method according to claim 8, wherein said dielectric wall comprises quartz.

11. A method according to claim 8, wherein said step (c) comprises providing the electrical energy with a magnitude to effect a power density across said substrate of less than 520 (mW/cm²).

12. A method according to claim 11, wherein the electrical energy is provided a magnitude to effect a power density across said substrate of less than 330 (mW/cm²).