Micro-machining minute hollow using native oxide membrane

• US 5,662,814 A
• Filed: 05/28/1996
• Issued: 09/02/1997
• Est. Priority Date: 12/27/1993
• Status: Expired due to Term

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Sugino, Rinji
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): BILODEAU, THOMA
• Application Number:
  US08/653,977
• Time in Patent Office: 462 Days
• Field of Search: 216/2, 216/39, 216/60, 216/56, 216/80, 216/97, 437/919, 437/977, 204/129.3, 156/633.1, 156/646.1, 156/653.1, 156/657.1
• US Class Current: 216/2
• CPC Class Codes: B81B 2203/0315 Cavities
• CPC Class Codes: B81C 1/00047 Cavities
• CPC Class Codes: B81C 1/00626 Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
• CPC Class Codes: B81C 2201/0115 Porous silicon
• CPC Class Codes: H01J 21/105 with microengineered cathode and control electrodes, e.g. Spindt-type
• CPC Class Codes: H01L 21/32137 of silicon-containing layers

Abstract

A native oxide film is formed on the surface of a silicon substrate. The native oxide film has at least island-shaped imperfect SiO₂ regions not formed with a perfect SiO₂ film. Before the native oxide film is formed, a mask layer having a necessary opening is formed over the silicon substrate, according to necessity. The silicon substrate is etched in a vapor phase via the imperfect SiO₂ regions of the native oxide film to form a hollow under the native oxide film at least at a partial region thereof. An upper film is formed on the native oxide film to cover and close the imperfect SiO₂ regions. In this manner, a minute hollow can be formed in the silicon substrate with good controllability.

Claims

1. A method of forming a hollow comprising the steps of:

(a) forming a film having a number of holes at least on a partial area of a surface of a substrate, said film being formed to pass an etchant therethrough;

(b) etching said substrate by said etchant through the holes in at least a partial region of said film to form a hollow under at least said partial region of said film; and

(c) forming an upper layer at least on said film by film deposition to cover and close the holes and seal the hollow, wherein said upper layer does not contact a bottom surface of said hollow.

2. A method according to claim 1, wherein said substrate is a silicon substrate, and said film is a native oxide film.

3. A method according to claim 2, further comprising before said step (a) the steps of:

(d) forming an underlying film having a thickness on the surface of said silicon substrate; and

(e) forming an opening in said underlying film at a region corresponding to at least said partial region to expose the surface of said silicon substrate,

wherein said step (a) forms said native oxide film on the surface of said silicon substrate exposed at the bottom of said opening.

4. A method according to claim 3, wherein said step (b) uses chlorine-containing etchant, and said underlying film is made of material not etched by the chlorine-containing etchant.

5. A method according to claim 3, wherein said underlying film is a polysilicon film.

6. A method according to claim 3, further comprising after said step (e) the step of doping n-type impurities through said opening into said silicon substrate to form a doped region having etching selectivity compared to a non-doped region.

7. A method according to claim 2, wherein said step (b) etches said silicon substrate while applying ultraviolet light to at least said partial region.

8. A method according to claim 2, wherein said step (b) etches said silicon substrate by generating plasma containing chlorine and using only neutral Active species derived from the plasma.

9. A method according to claim 2, wherein said step (b) etches said silicon substrate while applying a laser beam to at least said partial region.

10. A method according to claim 1, wherein said partial region is a stripe region having a width of 2 μ

m or less.

11. A method according to claim 1, wherein said partial region is a region having a shape capable of being included in a circle having a diameter of 3 μ

m or less.

12. A method according to claim 3, wherein at least a portion of said silicon substrate is doped with n-type impurities to such a level that a doped region has etching selectivity compared to a non-doped region.

13. A method according to claim 12, further comprising before said step (d) the step of doping n-type impurities into said silicon substrate at a region containing said partial region.

14. A method according to claim 3, wherein said silicon substrate surface is (100)-oriented silicon.

15. A method according to claim 14, wherein said hollow is of a quadrangular pyramid shape.

16. A method of forming a hollow comprising the steps of:

(a) forming a convex region of a pattern on an underlying substrate having a surface , said convex region having a side wall generally perpendicular to the surface of said underlying substrate;

(b) forming a side wall protection film on the side wall of said convex region;

(c) forming a second film having a number of holes on the upper surface of said convex region, wherein said substrate surface and said side wall protection film have a higher resistance to etching by an etchant than the convex region;

(d) removing at least a partial region of said convex region by said etchant through the holes; and

(e) forming an upper film at least on said second film to cover the holes.

17. A method according to claim 16, wherein said convex region is made of polysilicon, said second film is a native oxide film, and said step (d) removes at least a partial region of said convex region by etching said convex region made of polysilicon.

18. A method according to claim 17, wherein said pattern is a stripe pattern having a width of 2 μ

m or less.

19. A method according to claim 17, wherein said pattern is a pattern capable of being included in a circle having a diameter of 3 μ

m or less.

20. A method according to claim 16, wherein said underlying substrate is a glass substrate.

21. A method of forming a hollow comprising the steps of:

forming an intermediate film on an underlying substrate;

forming an upper film on said intermediate film, said upper film having etching selectively different from said intermediate film;

selectively etching said upper film and said intermediate film at a region, wherein said underlying substrate has a higher resistance to this selective etching than said upper film and said intermediate film;

forming a third film having a number of holes on a side wall of said intermediate film at said region, said third film having etching characteristic different from said intermediate film, said holes being capable of passing an etchant therethrough and of being closed by film deposition;

etching said intermediate film by said etchant through holes of said third film to a depth; and

forming a cover film at least on said third film to close the holes.

22. A method according to claim 21, wherein said intermediate film is made of polysilicon, and said third film is a native oxide film.

23. A method according to claim 21, wherein said underlying substrate is a glass substrate.