Pattern writing method during X-ray mask fabrication

• US 5,663,018 A
• Filed: 05/28/1996
• Issued: 09/02/1997
• Est. Priority Date: 05/28/1996
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Johnson, William A., Laird, Daniel L., Cummings, Kevin D.
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US08/654,457
• Time in Patent Office: 462 Days
• Field of Search: 430/5, 430/322, 378/34, 378/35
• US Class Current: 430/5
• CPC Class Codes: G03F 1/22 Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
• CPC Class Codes: G03F 7/70425 Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
• CPC Class Codes: G03F 7/70783 Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
• CPC Class Codes: G03F 7/70866 of mask or workpiece

Abstract

A pattern writing method for X-ray mask fabrication including forming a uniform membrane layer on an X-ray absorbing layer and forming an etch mask on the layer of X-ray absorbing material including the steps of providing a layer of material sensitive to radiation. The layer of material has internal stresses which are altered by exposure to the radiation. The material is exposed in associated areas (e.g. a spiral) such that the internal stresses within the layer of material and altered internal stresses in the associated areas are substantially offset to reduce distortion in the X-ray mask.

Claims

1. A pattern writing method for membrane structure fabrication comprising the steps of:

forming a membrane structure; and

forming a material system on the membrane structure including the steps of providing a layer of material with internal stresses, the internal stresses being altered by exposure of the material to radiation to produce altered internal stresses in exposed areas, and exposing the layer of material to radiation to define a pattern, the exposing being performed in associated areas such that the internal stresses within the layer of material and altered internal stresses in the associated areas are substantially offset to reduce distortion in the material system and in the membrane structure.

2. A pattern writing method for membrane structure fabrication as claimed in claim 1 wherein the step of exposing the layer of material to the radiation to define the pattern includes exposing the layer of material in a spiral path.

3. A pattern writing method for membrane structure fabrication as claimed in claim 2 wherein the step of exposing the layer of material in a spiral path includes starting the spiral path at approximately a central portion of the layer of material.

4. A pattern writing method for mask fabrication comprising the steps of:

forming a layer of radiation absorbing material;

forming a uniform membrane layer on the radiation absorbing layer; and

forming an etch mask on the layer of radiation absorbing material including the steps of providing a layer of material sensitive to a radiation, the layer of material having internal stresses, the internal stresses being altered by exposure to the radiation of the layer of material to produce altered internal stresses in exposed areas, and exposing the layer of material to the radiation to define a pattern, the exposing being performed in associated areas such that the internal stresses within the layer of material and altered internal stresses in the associated areas are substantially offset to reduce distortion in the etch mask and in the layer of radiation absorbing material.

5. A pattern writing method for mask fabrication as claimed in claim 4 wherein the step of exposing the layer of material to the radiation to define the pattern includes exposing the layer of material in a spiral path.

6. A pattern writing method for mask fabrication as claimed in claim 5 wherein the step of exposing the layer of material in a spiral path includes starting the spiral path at approximately a central portion of the layer of material.

7. A pattern writing method for mask fabrication as claimed in claim 4 wherein the step of forming the membrane layer includes prestressing the membrane layer with tension stress.

8. A pattern writing method for mask fabrication as claimed in claim 4 including in addition a step of defining a rectangular membrane area on the membrane layer and the layer of radiation absorbing material with the pattern being defined within the rectangular membrane area.

9. A pattern writing method for mask fabrication as claimed in claim 4 including in addition a step of forming the pattern through the layer of radiation absorbing material.

10. A pattern writing method for mask fabrication as claimed in claim 9 wherein the step of forming the pattern through the layer of radiation absorbing material includes removing portions of the layer of radiation absorbing material by etching the layer of radiation absorbing material to form the pattern.

11. A pattern writing method for mask fabrication as claimed in claim 4 wherein the step of providing the layer of material sensitive to the radiation includes providing a layer of photoresist.

12. A pattern writing method for mask fabrication as claimed in claim 11 wherein the step of exposing the layer of material to the radiation to define a pattern includes writing the pattern in the layer of photoresist using an electron beam device.

13. A pattern writing method for X-ray mask fabrication comprising the steps of:

providing a wafer with a planar surface;

positioning a membrane layer on the planar surface of the wafer;

positioning a layer of X-ray absorbing material on the membrane layer;

positioning a material system on the layer of X-ray absorbing material, the material system including a layer of material sensitive to a radiation, the layer of material having internal stresses, the internal stresses being altered by exposure to the radiation of the layer of material to produce altered internal stresses in exposed areas;

forming a centrally located, rectangularly shaped opening through the wafer to define a rectangular membrane area on the membrane layer;

forming a portion of the material system overlying the rectangular membrane area into an etch mask on the layer of X-ray absorbing material including exposing the layer of material to the radiation to define a pattern, the exposing being performed in associated areas such that the internal stresses within the layer of material and altered internal stresses in the associated areas are substantially offset to reduce distortion in the etch mask and in the layer of X-ray absorbing material; and

removing exposed portions of the layer of material.

14. A pattern writing method for X-ray mask fabrication as claimed in claim 13 wherein the step of positioning the material system includes positioning a material system including a layer of hard mask material and a layer of photoresist.

15. A pattern writing method for X-ray mask fabrication as claimed in claim 14 wherein the step of exposing the layer of material to the radiation to define the pattern includes exposing the layer of material in a spiral path.

16. A pattern Writing method for X-ray mask fabrication as claimed in claim 15 wherein the step of exposing the layer of material in a spiral path includes starting the spiral path at approximately a central portion of the layer of material.