Semiconductor piezoelectric strain measuring transducer

• US 5,663,507 A
• Filed: 03/18/1996
• Issued: 09/02/1997
• Est. Priority Date: 03/18/1996
• Status: Expired due to Term

• Current Assignee: United States Navy (U.S. Department Of Defense)
• Original Assignee: Harvard University
• Inventors: Westervelt, Robert M., Beck, Rex G.
• Primary Examiner(s): Dombroske, George M.
• Assistant Examiner(s): Noori, Max H.
• Application Number:
  US08/616,886
• Time in Patent Office: 533 Days
• Field of Search: 73/726, 73/727, 73/763, 73/777
• US Class Current: 73/727
• CPC Class Codes: B82Y 35/00 Methods or apparatus for measurement or analysis of nanostructures
• CPC Class Codes: G01L 1/16 using properties of piezoelectric devices
• CPC Class Codes: G01L 1/2293 of the semi-conductor type semi-conductor devices controllable by variations of applied mechanical force H01L29/84
• CPC Class Codes: Y10S 977/837 Piezoelectric property of nanomaterial

Abstract

A novel GaAs/AlGaAs piezoelectric FET strain sensing transducer is disclosed. An embodiment of the strain sensing transducer includes a single piezoelectric crystal structure forming a cantilever arm and having an FET at the fixed cantilever base. Circuitry connected to measure changes in the conductivity of the FET Channel provides an output signal indicative of the measured strain produced by small forces which alter the conductance of the FET due to piezoelectric effects.

Claims

1. A strain measuring transducer comprising, in combination:

a beam or cantilever arm comprising a semiconductor material and having a fixed base section and a displacement section capable of being displaced by a physical force applied thereto, with the base section being a region of maximum strain of the beam or cantilever arm;

the base section being a crystal lattice heterostructure comprising in series an upper surface layer, a first aluminum gallium arsenide layer, an intermediate gallium arsenide layer, a second aluminum gallium arsenide layer and lower surface layer;

means defining a gate and means defining a semiconducting channel at the base section and beneath the surface of the crystal lattice heterostructure with the semiconducting channel comprising a portion of the intermediate gallium arsenide layer,

a doping layer separate from the semiconducting channel;

first circuit means for applying an electrical potential to opposing ends of the channel to cause an electrical current to flow through the channel,

means for applying a variable physical force to the displacement section of the beam or cantilever arm to subject the channel to a variable strain and to generate a piezoelectric effect,

sensing means connected to opposing ends of the channel to measure changes in electrical conductance of the channel caused by said variable strain, and

measuring and readout means connected to the sensing means to relate the changes in electrical conductance to the variable physical force.

2. A strain measuring transducer as set forth in claim 1 wherein the channel is formed on one face of the crystal lattice structure.

3. A strain measuring transducer as set forth in claim 1 wherein the means for applying a variable physical force comprises means for applying a deflection force to the displacement section in a direction substantially orthogonal to the face to cause a strain directed in the plane of the face at the channel.

4. A strain measuring transducer as set forth in claim 3 wherein the piezoelectric crystal lattice structure is a gallium arsenide crystal.

5. A strain measuring transducer as set forth in claim 4 wherein the beam or cantilever arm is formed from alternating layers of GaAs and AlGaAs.

6. A strain measuring transducer as set forth in claim 1 having a strain sensitivity of less than 2×

10^-9 /√

Hz.

7. A strain measuring transducer as set forth in claim 1 having a power dissipation of less than 5 μ

W.

8. A strain measuring transducer as set forth in claim 1 having an operational bandwidth of greater than 100 kHz.

9. A strain measuring transducer as set forth in claim 1 integrated into an atomic force microscope.

10. A method of measuring the magnitude of a variable force comprising, in combination,

forming a field effect semiconducting channel in a base section of a cantilever or beam having a crystal lattice heterostructure comprising in series an upper surface layer, a first aluminum gallium arsenide layer, an intermediate gallium arsenide layer, a second aluminum gallium arsenide layer and lower surface layer, with the semiconducting channel being beneath the surface of the crystal lattice heterostructure and comprising a portion of the intermediate gallium arsenide layer, and with the crystal lattice heterostructure having a doping layer separate from the semiconducting channel

fixedly attaching the base section to a mounting base such that a displacement section of the lattice structure extends outwardly from an edge of said mounting base to form the beam or cantilever arm, with the channel being positioned adjacent the edge,

applying the variable force to the displacement section of the structure to cause a variable magnitude of strain to be applied to the channel, and

measuring variations in electrical conductance of the channel to form an indication of a magnitude of the force.

11. The method of claim 10 wherein the piezoelectric crystal structure is a gallium arsenide crystal.

12. The method of claim 11 wherein the beam or cantilever arm is formed from alternating layers of GaAs and AlGaAs.

13. A strain sensing transducer comprising, in combination,

an elongated beam composed of a semiconductor crystal lattice heterostructure comprising in series an upper surface layer, a first aluminum gallium arsenide layer, an intermediate gallium arsenide layer, a second aluminum gallium arsenide layer and lower surface layer:

means defining a gate and means defining an elongated transconductive channel region beneath the surface of the crystal lattice heterostructure with the transconductive channel region comprising a portion of the intermediate gallium arsenide layer,

a doping layer separate from the transconductive channel region;

said transconductive channel having a long dimension less than 100 microns and exhibiting a piezoelectric effect which varies the electrical conductance of said channel when said channel is placed under physical strain along lines of force parallel to said long dimension,

means for rigidly mounting at least one end of said beam,

means for applying a variable deflection force to said beam to subject said channel region to a variable magnitude of physical strain such that the conductance of said channel varies,

a source of an electrical current coupled to said channel to induce a current flow therethrough, and

electrical sensing means coupled to said channel for producing an electrical output signal having a value indicative of the conductance of said channel for indicating the magnitude of said deflection force.

14. A strain sensing transducer as set forth in claim 13 characterized in that the sensitivity of said transducer to said deflection force becomes greater as the size of said beam decreases.