Apparatus and method for optical heterodyne conversion

• US 5,663,639 A
• Filed: 01/18/1994
• Issued: 09/02/1997
• Est. Priority Date: 01/18/1994
• Status: Expired due to Fees

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Smith, Frank W., Brown, Elliott R.
• Primary Examiner(s): Karlsen, Ernest F.
• Application Number:
  US08/183,057
• Time in Patent Office: 1,323 Days
• Field of Search: 324/158.1, 324/96, 359/189, 359/191, 359/326, 250/214 A, 250/214.1, 257/465
• US Class Current: 324/96
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H01L 31/1085 the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
• CPC Class Codes: H01S 5/0623 using the beating between two closely spaced optical frequencies, i.e. heterodyne mixing
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

An apparatus and method for optical heterodyne conversion and a radiation source and integrated diagnostics using the apparatus and method are disclosed. The radiation source can operate in a high-power narrow-band mode in which a constant-frequency output is provided or in a low-power broadband mode in which the frequency is tunable to allow the radiation source to act as a sweep oscillator. The apparatus or photomixer includes two sets of interdigitated conductive electrodes formed on top of a crystal lattice formed of column III-V compounds, particularly InAlGaAs compounds. Additional column V atoms are interspersed within the lattice structure to form defect energy states in the bandgap of the host material. The region of the material between the interdigitated electrodes is illuminated by optical radiation containing two different frequencies. Photon absorption in the material causes a current at the difference frequency to be generated and coupled to the interdigitated electrodes. The current is then coupled to a planar transmission line or antenna structure to generate coherent, continuous-wave, unimodal radiation in the microwave, millimeter-wave, or submillimeter-wave regions.

Claims

1. A photomixer comprising:

a substrate;

a first layer of at least one III-V compound, the bottom of the first layer facing the substrate and the first layer including molecules of the at least one compound bonded to form a uniform crystal lattice and additional atoms of a column V element in addition to those required to form the uniform crystal lattice, the additional atoms being disposed within the uniform crystal lattice to form defects in the uniform crystal lattice; and

a second electrically conductive layer formed over the first layer comprising a region of electrically conductive interdigitated electrodes with openings in the conductive layer exposing said first layer, whereby an electrical signal of a third frequency is coupled from the first layer to the electrically conductive layer as the first layer receives optical radiation of a first and second frequency, the third frequency being the difference between the first and second frequencies of the optical radiation.

2. The photomixer of claim 1 wherein the at least one III-V compound comprises gallium arsenide or indium arsenide or aluminum arsenide.

3. The photomixer of claim 1 wherein the column V element is arsenic.

4. The photomixer of claim 1 wherein the first layer is a low-temperature-grown epitaxial layer.

5. The photomixer of claim 1 wherein the width of an interdigitated electrode is in the range 0.1 to 1.0 μ

m.

6. The photomixer of claim 1 wherein a gap between interdigitated electrodes is in the range 0.1 to 10 μ

m.

7. The photomixer of claim 1 wherein the third frequency is within the range of 50 GHz to 1 THz.

10. The photomixer of claim 7 wherein the power level of the electrical signal is approximately 1 milliwatt.

11. The photomixer of claim 7 wherein at least one of the first and second sources of optical radiation is tunable such that the frequency of the electrical signal can be swept over a second range of frequencies between 50 GHz and 1 THz.

8. A radiation source comprising:

a first source of optical radiation for providing optical radiation of a first frequency;

a second source of optical radiation for providing optical radiation of a second frequency;

a photomixer comprising;

a substrate;

a first layer of at least one III-V compound formed on the substrate for receiving said optical radiation of a first frequency and said optical radiation of a second frequency, the bottom of the first layer facing the substrate and the first layer including molecules of the at least one compound bonded to form a uniform crystal lattice and additional atoms of a column V element in addition to those required to form the uniform crystal lattice, the additional atoms being disposed within the uniform crystal lattice to form defects in the uniform crystal lattice; and

a second electrically conductive layer formed on the first layer comprising a region of electrically conductive interdigitated electrodes with openings in the conductive layer between the interdigitated electrodes which expose said first layer, whereby an electrical signal of a third frequency is coupled from the first layer to the electrically conductive layer as the first layer receives the radiation of the first and second frequencies, the third frequency being the difference between the first and second frequencies of the optical radiation; and

an antenna coupled to the conductive layer to radiate said electrical signal of the third frequency away from the photomixer.

9. The radiation source of claim 8 wherein the power level of the electrical signal is approximately 1 milliwatt.

12. The radiation source of claim 8 wherein the antenna is a resonant antenna such that the electrical signal has a high power level in a narrow frequency band, the range in frequency of the band being approximately 20 percent of a center frequency of the band.

13. The radiation source of claim 12 wherein the power level of the electrical signal within the narrow frequency band is approximately 10 milliwatts.

14. The radiation source of claim 8 wherein the power level of the electrical signal is approximately 10 milliwatts.

15. The radiation source of claim 8 wherein the third frequency is within the range of 50 GHz to 1 THz.

16. The radiation source of claim 8 wherein the first source is a solid state laser.

17. The radiation source of claim 8 wherein the second source is a solid state laser.

18. The radiation source of claim 8 wherein the first source is a semiconductor diode laser.

19. The radiation source of claim 8 wherein the second source is a semiconductor diode laser.

20. The radiation source of claim 8 wherein the first frequency of the first source is tunable.

21. The radiation source of claim 8 wherein the second frequency of the second source is tunable.

22. A photomixer comprising:

a substrate;

a low-temperature-grown epitaxial first layer of at least one III-V compound, the bottom of the first layer facing the substrate and the first layer including molecules of the at least one compound bonded to form a uniform crystal lattice and additional atoms of a column V element in addition to those required to form the uniform crystal lattice, the additional atoms being disposed within the uniform crystal lattice to form defects in the uniform crystal lattice; and

a second electrically conductive layer formed over the first layer comprising a region of electrically conductive interdigitated electrodes with openings formed in the conductive layer between the electrodes to expose the first layer, whereby an electrical signal of a third frequency is coupled from the first layer to the electrically conductive layer as the first layer receives the optical radiation of a first and second frequency, the third frequency being the difference between the first and second frequencies of the optical radiation.

23. The photomixer of claim 22 wherein the at least one III-V compound comprises gallium arsenide or indium arsenide or aluminum arsenide.

24. The photomixer of claim 22 wherein the column V element is arsenic.

25. The photomixer of claim 22 wherein the width of an interdigitated electrode is in the range 0.1 to 1.0 μ

m.

26. The photomixer of claim 22 wherein a gap between interdigitated electrodes is in the range 0.1 to 10.0 μ

m.

27. A radiation source comprising:

a first source of optical radiation for providing optical radiation of a first frequency;

a second source of optical radiation for providing optical radiation of a second frequency;

a photomixer comprising;

a substrate;

a low-temperature-grown epitaxial first layer of at least one III-V compound formed on the substrate, the bottom of the first layer facing the substrate and the first layer including molecules of the at least one compound bonded to form a uniform crystal lattice and additional atoms of a column V element in addition to those required to form the uniform crystal lattice, the additional atoms being disposed within the uniform crystal lattice to form defects in the uniform crystal lattice;

a second electrically conductive layer formed over the first layer comprising a region of electrically conductive interdigitated electrodes with openings formed in the conductive layer between the electrodes to expose the first layer, whereby an electrical signal of a third frequency is coupled from the first layer to the electrically conductive layer as the first layer receives the optical radiation of a first and second frequency, the third frequency being the difference between the first and second frequencies of the optical radiation; and

an antenna coupled to the conductive layer to radiate a signal of the third frequency away from the photomixer.

28. The radiation source of claim 27 wherein the first source is a solid state laser.

29. The radiation source of claim 27 wherein the second source is a solid state laser.

30. The radiation source of claim 27 wherein the first source is a semiconductor diode laser.

31. The radiation source of claim 27 wherein the second source is a semiconductor diode laser.

32. The radiation source of claim 27 wherein the first frequency of the first source is tunable.

33. The radiation source of claim 27 wherein the second frequency of the second source is tunable.

34. A sweep oscillator comprising:

a first tunable source of optical radiation for providing optical radiation of a first frequency;

a second tunable source of optical radiation for providing optical radiation of a second frequency;

a photomixer comprising;

a substrate;

a first layer of at least one III-V compound formed on the substrate for receiving said optical radiation of a first frequency and said optical radiation of a second frequency, the bottom of the first layer facing the substrate and the first layer including molecules of the at least one compound bonded to form a uniform crystal lattice and additional atoms of a column V element in addition to those required to form the uniform crystal lattice, the additional atoms being disposed within the uniform crystal lattice to form defects in the uniform crystal lattice; and

a second electrically conductive layer formed on the first layer comprising a region of electrically conductive interdigitated electrodes with openings in the conductive layer between the interdigitated electrodes which expose said first layer, whereby an electrical signal of a third frequency is coupled from the first layer to the electrically conductive layer as the first layer receives the radiation of the first and second frequencies, the third frequency being the difference between the first and second frequencies of the optical radiation, and being sweepable over a range of frequencies as at least one of the first and second tunable sources of optical radiation is tuned; and

a planar antenna coupled to the conductive layer to radiate said electrical signal of the third frequency away from the photomixer.