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Method for generating proximity correction features for a lithographic mask pattern

  • US 5,663,893 A
  • Filed: 05/03/1995
  • Issued: 09/02/1997
  • Est. Priority Date: 05/03/1995
  • Status: Expired due to Term
First Claim
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1. In a lithographic pattern generation system where a mask pattern having a plurality of features is represented by pattern data wherein each of said plurality of features is enumerated in said pattern data, a method for synthesizing at least one type of correction feature for each of said plurality of features comprising the steps of:

  • dividing said pattern data into a plurality of data sets wherein each data set contains data corresponding to an overlapping section of said mask pattern;

    processing said each data set through at least one correction feature synthesis phase wherein each synthesis phase corresponds to one of said at least one type of correction feature and wherein said each synthesis phase formats said each data set into a data representation that provides information needed to synthesize said synthesis phase'"'"'s corresponding one type of correction feature, one of said plurality of data sets being processed through said at least one synthesis phase before a next data set of said plurality of data sets is processed through said at least one synthesis phase.

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