Semiconductor circuit having MOS circuit for use in strong electric field
First Claim
1. A semiconductor circuit employing a first power supply line for supplying a first voltage, a second power supply line for supplying a second voltage, and a third power supply line for supplying a third voltage outside a range determined by said first voltage and said second voltage, wherein said semiconductor circuit comprises:
- a first transistor of a first conduction type;
a second transistor of a second conduction type opposite to said first conduction type;
a third transistor of said second conduction type, said first, second, and third transistors being connected in series between said second power supply line and said third power supply line;
a fourth transistor of said first conduction type, connected between an input terminal and a control electrode of said first transistor.
4 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor circuit has a first transistor, a second transistor, a third transistor, and a fourth transistor. The first and fourth transistors are a first conduction type, and the second and third transistors are a second conduction type opposite to the first conduction type. The semiconductor circuit employs a first power supply line for supplying a first voltage, a second power supply line for supplying a second voltage, and a third power supply line for supplying a third voltage outside of the range determined by the first voltage and the second voltage. The first, second, and third transistors are connected in series between the second power supply line and the third power supply line, and the fourth transistor is connected between an input terminal and a control electrode of the first transistor.
-
Citations
26 Claims
-
1. A semiconductor circuit employing a first power supply line for supplying a first voltage, a second power supply line for supplying a second voltage, and a third power supply line for supplying a third voltage outside a range determined by said first voltage and said second voltage, wherein said semiconductor circuit comprises:
-
a first transistor of a first conduction type; a second transistor of a second conduction type opposite to said first conduction type; a third transistor of said second conduction type, said first, second, and third transistors being connected in series between said second power supply line and said third power supply line; a fourth transistor of said first conduction type, connected between an input terminal and a control electrode of said first transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A semiconductor circuit employing a first power supply voltage, a second power supply voltage, and a third power supply voltage outside a range determined by said first power supply voltage and second power supply voltage, wherein said semiconductor circuit comprises:
-
a first transistor of a first conduction type, and a strong electric field caused by said second power supply voltage and said third power supply voltage being applied to said first transistor; and a second transistor of said first conduction type, said second transistor being inserted between an input terminal and a control electrode of said first transistor, and a control electrode of said second transistor being set at a voltage determined by subtracting twice the threshold voltage of said first and second transistors from said first power supply voltage or set at a voltage lower than the determined voltage. - View Dependent Claims (10, 11, 12, 13, 14)
-
-
15. A semiconductor memory having a plurality of word lines, a plurality of bit lines, a plurality of memory cells each positioned at an intersection portion between a word line and a bit line, a column decoder for selecting a bit line, a word decoder for selecting a word line, and a pre-word decoder receiving address signals and controlling said word decoder, said pre-word decoder employing a first power supply line for supplying a first voltage, a second power supply line for supplying a second voltage, and a third power supply line for supplying a third voltage outside a range determined by said first voltage and said second voltage, wherein said pre-word decoder comprises:
-
a first transistor of a first conduction type; a second transistor of a second conduction type opposite to said first conduction type; a third transistor of said second conduction type, said first, second, and third transistors being connected in series between said second power supply line and said third power supply line; a fourth transistor of said first conduction type, connected between an input terminal and a control electrode of said first transistor. - View Dependent Claims (16, 17, 18, 19, 20, 21)
-
-
22. A semiconductor memory having a pre-word decoder employing a first power supply voltage, a second power supply voltage, and a third power supply voltage outside a range determined by said first power supply voltage second power supply voltage, wherein said pre-word decoder comprises:
-
a first transistor of a first conduction type, a strong electric field caused by said second power supply voltage and said third power supply voltage being applied to said first transistor; and a second transistor of said first conduction type, said second transistor being inserted between an input terminal and a control electrode of said first transistor, and a control electrode of said second transistor being set at a voltage determined by subtracting twice the threshold voltage of said first and second transistors for said first power supply voltage or set at a voltage lower than the determined voltage. - View Dependent Claims (23, 24, 25, 26)
-
Specification