Semiconductor light emitting device with defect decomposing and blocking layers

• US 5,665,977 A
• Filed: 08/02/1996
• Issued: 09/09/1997
• Est. Priority Date: 02/16/1994
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Ishibashi, Akira, Nagai, Masaharu, Matsumoto, Satoshi, Tomiya, Shigetaka, Ito, Satoshi, Morita, Etsuo, Nakano, Kazushi
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/691,536
• Time in Patent Office: 403 Days
• Field of Search: 257/21, 257/13, 257/17, 257/22, 257/96, 257/97, 257/103, 257/200, 372/43, 372/44, 372/45, 372/46
• US Class Current: 257/17
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01S 2304/02 MBE
• CPC Class Codes: H01S 5/3059 in II-VI materials
• CPC Class Codes: H01S 5/3216 quantum well or superlattice cladding layers
• CPC Class Codes: H01S 5/347 in AIIBVI compounds, e.g. ZnCdSe- laser

Abstract

A semiconductor light emitting device comprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still another semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.

Claims

1. A semiconductor light emitting device comprising:

a defect decomposing layer, a defect blocking layer, a first cladding layer, an active layer and a second cladding layer which are stacked in that order on a semiconductor substrate,

said defect decomposing layer serving to decompose a fixed dislocation into a movable dislocation,

and said defect blocking layer serving to block intrusion of defects beyond it,

said defect decomposing layer and said defect blocking layer comprising superlattice structures with the decomposing layer having well layers and barrier layers which are lattice-mismatched with regard to the substrate by having larger and smaller lattice constants than the substrate, respectively.

2. A semiconductor light emitting device according to claim 1, wherein said defect decomposing layer is made of at least one superlattice structure comprising a ZnSe layer and a ZnSSe layer.

3. A semiconductor light emitting device according to claim 1, wherein said defect blocking layer is made of at least one superlattice structure comprising a ZnMgSSe layer and a ZnSSe layer.

4. A semiconductor light emitting device according to claim 1, wherein said first cladding layer, said active layer and said second cladding layer is made of II-VI compound semiconductor.

5. A semiconductor light emitting device according to claim 1, wherein the defect decomposing layer is formed by more than one set of superlattices with each set comprising a ZnSe layer and a ZnSSe layer.

6. A semiconductor light emitting device according to claim 1, wherein the defect blocking layer is formed by more than one set of superlattices with each set comprising a ZnMgSSe layer and a ZnSSe layer.