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Vertical power mosfet having thick metal layer to reduce distributed resistance

  • US 5,665,996 A
  • Filed: 12/30/1994
  • Issued: 09/09/1997
  • Est. Priority Date: 12/30/1994
  • Status: Expired due to Term
First Claim
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1. A vertical power transistor comprising:

  • a die comprising a semiconductor material;

    a plurality of transistor cells arrayed on said die, each of said cells containing a first region located near a surface of said die and a control element and being arranged so as to permit a current to flow between said first region and a second region located at a position separated from said surface, the magnitude of said current being controlled by an electrical signal applied to said control element;

    a thin metal layer in electrical contact with said first region of each of said cells;

    a thick metal layer formed in electrical contact with said thin metal layer so as to form a low-resistance path between said first region of each of said cells; and

    a passivation layer overlying a portion of a top surface of said die, said passivation layer abutting a lateral edge of said thick metal layer but not overlapping a top surface of said thick metal layer, at least a portion of a top surface of said passivation layer remaining uncovered.

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