Metal matrix composite power dissipation apparatus

• US 5,666,269 A
• Filed: 10/28/1996
• Issued: 09/09/1997
• Est. Priority Date: 01/03/1994
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Romero, Guillermo L., Pinder, Brent W., Anderson, Samuel J.
• Primary Examiner(s): Tolin, Gerald P.
• Application Number:
  US08/741,576
• Time in Patent Office: 316 Days
• Field of Search: 62/259.2, 174/15.1, 174/16.1, 174/16.3, 174/52.4, 165/80.3, 165/80.4, 165/185, 165/104.33, 165/905, 428/620, 428/901, 428/539.5, 428/565, 428/551, 428/553, 428/554, 428/557, 428/559, 164/97-105, 164/122, 164/122.1, 257/703, 257/704, 257/707, 257/713, 257/714, 257/722, 361/689, 361/713, 361/699-710, 361/717-720, 361/722
• US Class Current: 361/699
• CPC Class Codes: F28F 3/12 Elements constructed in the shape of a hollow panel, e.g. with channels F28D1/02, F28D1/03 take precedence
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 428/901 Printed circuit

Abstract

A liquid cooled power dissipation apparatus (10) includes a metal matrix composite heat sink (11) with an insulation layer (17) integral to the apparatus (10). The insulation layer (17) is made integral to the apparatus (10) during infiltration of the metal matrix composite heat sink (11). Electronic components 23 are situated on top of the insulation layer (17).

Claims

1. A power dissipation apparatus comprising:

a metal matrix composite liquid cooled heatsink structure comprising a base and a lid;

an electrical isolation material positioned on and directly bonded to the metal matrix composite liquid cooled heatsink structure, the electrical isolation material having a first major surface, a second major surface, and a layer of conductive material disposed on the first major surface, wherein the second major surface contacts the metal matrix composite liquid cooled heatsink structure, and wherein the electrical isolation material is integral with the metal matrix composite liquid cooled heatsink structure and non-solder boned to the metal matrix composite material via a metal of the metal matrix composite liquid cooled heatsink structure which metal infiltrates said heatsink structure; and

an electronic circuit positioned on the layer of conductive material disposed on the electrical isolation material.

2. The apparatus of claim 1 wherein the base comprises fins.

3. The apparatus of claim 1, wherein the metal matrix composite liquid cooled heatsink structure comprises an infiltrated metal matrix composite.

4. The apparatus of claim 1, wherein the isolation layer comprises aluminum oxide.

5. The apparatus of claim 1, wherein the isolation layer comprises epoxy.

6. The apparatus of claim 1, wherein the electronic circuit comprises a power transistor.

7. The apparatus of claim 1, wherein the electronic circuit comprises a microprocessor.

8. The apparatus of claim 1, wherein the insulating layer comprises aluminum nitride.

9. A power dissipation apparatus comprising:

a metal matrix composite liquid cooled heatsink comprising a base having internal pin fins and a lid;

an insulating layer positioned on the metal matrix composite liquid cooled heatsink, the insulating layer and the metal matrix liquid cooled heatsink being a unitary structure and the insulating layer having a first major surface, a second major surface, and a layer of conductive material disposed on the first major surface, wherein the second major surface is non-solder bonded to the metal matrix composite liquid cooled heatsink by a metal of the metal matrix composite liquid cooled heatsink which metal infiltrates said heatsink; and

an electronic circuit positioned on the layer of conductive material disposed of the insulating layer.

10. The apparatus of claim 9, wherein the electronic circuit comprises a power transistor.

11. The apparatus of claim 9, wherein the insulating layer comprises aluminum nitride.