×

Process for fabricating a semiconductor device having a segmented channel region

  • US 5,668,021 A
  • Filed: 06/04/1996
  • Issued: 09/16/1997
  • Est. Priority Date: 06/04/1996
  • Status: Expired due to Term
First Claim
Patent Images

1. A process for fabricating a semiconductor device comprising the steps of:

  • providing a semiconductor substrate having a dielectric layer thereon;

    forming a first polycrystalline silicon layer overlying the dielectric layer;

    forming an insulating layer overlying a first portion and a second portion of the first polycrystalline silicon layer;

    forming an opening in the insulating layer exposing the first portion of the first polycrystalline silicon layer, the opening having a wall surface;

    forming a first sidewall spacer adjacent to the wall surface;

    forming a buried junction region in the semiconductor substrate aligned to the first sidewall spacer;

    filling the opening with a second polycrystalline silicon layer;

    removing the insulating layer and the second portion of the first polycrystalline silicon layer;

    forming a second sidewall spacer adjacent to the first sidewall spacer and overlying the dielectric layer; and

    forming source and drain regions in the semiconductor substrate.

View all claims
  • 20 Assignments
Timeline View
Assignment View
    ×
    ×