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Active matrix crystal display apparatus using thin film transistor

  • US 5,668,379 A
  • Filed: 07/26/1995
  • Issued: 09/16/1997
  • Est. Priority Date: 07/27/1994
  • Status: Expired due to Term
First Claim
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1. A semiconductor device, comprising:

  • a substrate, anda semiconductor switching element comprising;

    a gate electrode on said substrate,an insulating layer and a semiconductor layer, providing a laminate layer on the gate electrode, anda source electrode and a drain electrode which are formed so as to cross over said gate electrode, whereinsaid laminate layer has an end portion which is tapered, and said gate electrode has an end portion which is tapered, anda taper angle θ

    g of said end portion of said gate electrode is formed so as to be less than 90°

    , and also equal to or less than three times, of a taper angle θ

    s of said end portion of said laminate layer.

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