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Planar photodetection device suitable for flip-chip process and a fabrication process of such a planar photodetection device

  • US 5,668,386 A
  • Filed: 07/25/1995
  • Issued: 09/16/1997
  • Est. Priority Date: 09/19/1994
  • Status: Expired due to Fees
First Claim
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1. A semiconductor photodetection device, comprising:

  • a substrate;

    a first semiconductor layer of a first conductivity type provided on said substrate;

    a second semiconductor layer of said first conductivity type provided on said first semiconductor layer;

    a first conductive region formed in said second semiconductor layer and having a second, opposite conductivity type;

    a second conductive region formed in said second semiconductor layer with a separation from said first conductive region, said second conductive region having said second conductivity type and an area substantially larger than an area of said first conductive region;

    a first metal bump provided on said second semiconductor layer in correspondence to said first conductive region, said first metal bump having a first area; and

    a second metal bump provided on said second semiconductor layer in correspondence to said second conductive region, said second metal bump having a second area;

    said first and second metal bumps projecting from said second semiconductor layer with a substantially identical distance;

    wherein said second area is at least ten times as large as said first area.

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