Boron containing multilayer coatings and method of fabrication

• US 5,670,252 A
• Filed: 11/04/1994
• Issued: 09/23/1997
• Est. Priority Date: 03/11/1991
• Status: Expired due to Term

• Current Assignee: Lawrence Livermore National Security LLC (Government of the United States of America)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Jankowski, Alan F., Makowiecki, Daniel M.
• Primary Examiner(s): Robinson, Ellis
• Assistant Examiner(s): Speer, Timothy M.
• Application Number:
  US08/334,091
• Time in Patent Office: 1,054 Days
• Field of Search: 428/698, 428/704, 428/912.2, 428/336, 428/688, 359/584, 359/585, 359/589
• US Class Current: 428/336
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: C23C 14/0635 Carbides
• CPC Class Codes: C23C 14/0647 Boron nitride
• CPC Class Codes: C23C 14/18 on other inorganic substrates
• CPC Class Codes: C23C 14/185 by cathodic sputtering
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: G21K 1/062 Devices having a multilayer structure
• CPC Class Codes: G21K 2201/061 characterised by a multilayer structure
• CPC Class Codes: G21K 2201/067 Construction details
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

Hard coatings are fabricated from multilayer boron/boron carbide, boron carbide/cubic boron nitride, and boron/boron nitride/boron carbide, and the fabrication thereof involves magnetron sputtering in a selected atmosphere. These hard coatings may be applied to tools and engine and other parts, as well to reduce wear on tribological surfaces and electronic devices. These boron coatings contain no morphological growth features. For example, the boron and boron carbide used in forming the multilayers are formed in an inert (e.g. argon) atmosphere, while the cubic boron nitride is formed in a reactive (e.g. nitrogen) atmosphere. The multilayer boron/boron carbide, and boron carbide/cubic boron nitride is produced by depositing alternate layers of boron, cubic boron nitride or boron carbide, with the alternate layers having a thickness of 1 nanometer to 1 micrometer, and at least the interfaces of the layers may be of a discrete or a blended or graded composition.

Claims

1. A multilayer structure consisting of a material selected from the group consisting of alternating layers of boron and boron carbide, and alternating layers of boron nitride and boron carbide.

2. The multilayer structure of claim 1, wherein the layers of boron nitride consist of cubic boron nitride.

3. The multilayer structure of claim 1, wherein at least one of the interfaces of the alternating layers is discrete.

4. The multilayer structure of claim 1, wherein at least one of the interfaces of the alternating layers is diffused.

5. The multilayer structure of claim 1, wherein at least one of the alternating layers is of a composition which varies in composition from 0-100% boron and 100-0% boron nitride or boron carbide.

6. The multilayer structure of claim 1, additionally including layers of material consisting of alternating layers of boron, boron carbide and boron nitride.

7. The multilayer structure of claim 1, formed by a method comprising:

exposing a first target to a magnetron sputtering source, selected from the group of rf and dc magnetron sources, in a selected atmosphere containing gas selected from the group of inert and reactive gas;

collecting a thin film of material ejected from the first target material;

exposing a second target to a magnetron sputtering source in a selected atmosphere containing gas selected from the group of inert and reactive gas; and

collecting a thin film of material ejected from the second target on the thin first material film.

8. The multilayer structure of claim 7, wherein the inert gas is argon, and wherein the reactive gas is nitrogen.

9. The multilayer structure of claim 7, wherein the films of ejected material have a thickness of about 1 nanometer to about 1 micrometer.

10. The multilayer structure of claim 7, wherein gas contained in the first-mentioned atmosphere and the gas contained in the second-mentioned atmosphere may be varied to produce at least diffused interfaces between alternating films of ejected material.

11. The multilayer structure of claim 10, wherein the first-mentioned atmosphere is composed of an inert gas, and the second-mentioned atmosphere is composed of a reactive gas.

12. The multilayer structure of claim 11, wherein the inert gas is argon, and the reactive gas is about 5-100% nitrogen.

13. The method of claim 7, additionally including repeating in an alternating manner the exposure of the targets to a magnetron sputtering source in alternating inert and reactive atmospheres to repeatedly produce alternating films of ejected material to a desired thickness.

14. The multilayer structure of claim 7, wherein the first-mentioned atmosphere is composed of an inert gas, and wherein the deposited thin film is composed of boron.

15. The multilayer structure of claim 14, wherein the second-mentioned atmosphere is composed of an inert gas, and wherein the deposited thin film is composed of boron carbide.

16. The multilayer structure of claim 7, wherein the first-mentioned atmosphere is composed of an inert gas, wherein the deposited thin film is composed of boron carbide, wherein the second-mentioned atmosphere is composed of a reactive gas, and wherein the deposited thin film is composed of cubic boron nitride.

17. The multilayer structure of claim 15, wherein an rf magnetron sputtering source is used with the first-mentioned atmosphere, and a dc magnetron sputtering source is used with the second-mentioned atmosphere, such that the material from the first target is boron, and the material from the second target is boron carbide.

18. The multilayer structure of claim 16, wherein dc magnetron sputtering source is used with the inert gas, and wherein an rf magnetron sputtering source us used with the reactive gas.

19. A multilayer structure consisting of magnetron sputtered alternating layers of at least two materials selected from the group consisting of boron, boron carbide, and cubic boron nitride.

20. The multilayer structure of claim 19, consisting of layers of boron and boron carbide.

21. The multilayer structure of claim 19, consisting of layers of boron carbide and cubic boron nitride.

22. The multilayer structure of claim 19, wherein each of the layers has a thickness in the range of 1 nanometer to 1 micrometer.

23. The multilayer structure of claim 19, additionally including a substrate wherein said layers of boron are formed by exposing a dense boron target to an rf magnetron sputtering source in an inert gas, and collecting a thin film of ejected boron on a substrate or on a layer of boron carbide.

24. The multilayer structure of claim 19, additionally including a substrate wherein said layers of boron carbide are formed by exposing a dense boron carbide target to a dc magnetron sputtering source in an inert gas, and collecting a thin film of ejected boron carbide on a substrate or on a layer of boron or on a layer of cubic boron nitride.

25. The multilayer structure of claim 19, additionally including a substrate wherein said layers of cubic boron nitride are formed by exposing a dense boron target to an rf magnetron sputtering source in a reactive gas, and collecting a thin layer of ejected gas, and collecting a thin layer of ejected cubic boron nitride on a substrate or a layer of boron carbide.

26. The multilayer structure of claim 19, wherein the layers of boron and boron carbide are formed by magnetron sputtering in an inert atmosphere.

27. The multilayer structure of claim 19, wherein the layers of cubic boron carbide are formed by magnetron sputtering in a reactive atmosphere.

28. The multilayer structure of claim 19, wherein the layers of boron and cubic boron nitride are formed by an rf magnetron sputtering source.

29. The multilayer structure of claim 19, wherein the layers of boron carbide are formed by a dc magnetron sputtering source.

30. A multilayer structure consisting of a plurality of different boron containing layers selected from the group consisting of boron, boron carbide, and cubic boron carbide, and including at least one layer of boron carbide.

31. The multilayer structure of claim 30, additionally including at least one layer of boron, whereby the structure is a boron and boron carbide multilayer.

32. The multilayer structure of claim 30, additionally including at least one layer of cubic boron nitride, whereby the structure is a cubic boron nitride and boron carbide multilayer.

33. A multilayer structure consisting of a plurality of different boron containing layers selected from the group consisting of boron, boron nitride, and boron carbide, each of said boron containing layers having compatible mechanical characteristics and atomic structures.

34. The multilayer structure of claim 33, wherein the plurality of different boron containing layers are alternately located.