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Controlled recrystallization of buried strap in a semiconductor memory device

  • US 5,670,805 A
  • Filed: 05/07/1996
  • Issued: 09/23/1997
  • Est. Priority Date: 03/29/1995
  • Status: Expired due to Term
First Claim
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1. A semiconductor memory device, comprising:

  • a semiconductor substrate;

    a trench formed in said semiconductor substrate;

    conductive material formed in said trench and insulatively spaced from semiconductor substrate to form a capacitor;

    a transfer gate transistor including source/drain regions formed on a surface of said semiconductor substrate and a control gate insulatively spaced from a channel region between said source/drain regions; and

    a buried strap electrically connecting said capacitor to one of said source/drain regions of said transfer gate transistor, a portion of said buried strap comprising recrystallized silicon.

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