Controlled recrystallization of buried strap in a semiconductor memory device
First Claim
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1. A semiconductor memory device, comprising:
- a semiconductor substrate;
a trench formed in said semiconductor substrate;
conductive material formed in said trench and insulatively spaced from semiconductor substrate to form a capacitor;
a transfer gate transistor including source/drain regions formed on a surface of said semiconductor substrate and a control gate insulatively spaced from a channel region between said source/drain regions; and
a buried strap electrically connecting said capacitor to one of said source/drain regions of said transfer gate transistor, a portion of said buried strap comprising recrystallized silicon.
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Abstract
A semiconductor memory device includes a trench formed in a semiconductor substrate. Conductive material is formed in the trench and is insulatively spaced from the semiconductor substrate to form a capacitor. A transfer gate transistor includes source/drain regions formed on a surface of the semiconductor substrate and a control gate which is insulatively spaced from a channel region between the source and drain regions. A buried strap electrically connects the capacitor to one of the source/drain regions of the transfer gate transistor. A portion of the buried strap includes recrystallized silicon.
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Citations
1 Claim
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1. A semiconductor memory device, comprising:
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a semiconductor substrate; a trench formed in said semiconductor substrate; conductive material formed in said trench and insulatively spaced from semiconductor substrate to form a capacitor; a transfer gate transistor including source/drain regions formed on a surface of said semiconductor substrate and a control gate insulatively spaced from a channel region between said source/drain regions; and a buried strap electrically connecting said capacitor to one of said source/drain regions of said transfer gate transistor, a portion of said buried strap comprising recrystallized silicon.
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Specification
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Current AssigneeGlobalFoundries, Inc.
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Original AssigneeInternational Business Machines Corporation, Siemens AG, Kabushiki Kaisha Toshiba (Toshiba Corporation)
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InventorsStengl, Reinhard Johannes, Shiozawa, Junichi, Ho, Herbert L., Mandelman, Jack A., Hammerl, Erwin
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Primary Examiner(s)Ngo, Ngan V.
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Application NumberUS08/643,983Time in Patent Office504 DaysField of Search257/301, 257/302, 257/303, 257/304, 257/305US Class Current257/301CPC Class CodesH10B 12/038 the capacitor being in a tr...
