VBB reference for pumped substrates

• US 5,670,907 A
• Filed: 03/14/1995
• Issued: 09/23/1997
• Est. Priority Date: 03/14/1995
• Status: Expired due to Term

• Current Assignee: Lattice Semiconductor Corporation
• Original Assignee: Lattice Semiconductor Corporation
• Inventors: Gorecki, James, Lall, Ravindar, Lefferts, Robert B.
• Primary Examiner(s): Callahan, Timothy P.
• Assistant Examiner(s): KIM, JUNG H
• Application Number:
  US08/403,595
• Time in Patent Office: 924 Days
• Field of Search: 327/535, 327/536, 327/537, 327/538, 327/539, 327/77, 323/313, 323/315
• US Class Current: 327/535
• CPC Class Codes: G05F 3/205 Substrate bias-voltage generators for static stores G11C5/146
• CPC Class Codes: G05F 3/262 using field-effect transistors only
• CPC Class Codes: G11C 5/146 Substrate bias generators G11C5/141 takes precedence
• CPC Class Codes: H02M 3/07 using capacitors charged and discharged alternately by semiconductor devices with control electrode , e.g. charge pumps

Abstract

An embodiment of a pumped substrate system includes an oscillator, capacitive pump, comparing circuit, and a level shifter. The level shifter is coupled between the substrate and the positive input lead of the comparator and shifts the voltage level present on the substrate by a voltage Vbg. The comparator compares ground potential to the shifted substrate voltage. The oscillator, capacitive pump and comparing circuit form a negative feedback loop which operates to maintain the substrate voltage substantially equal to -Vbg. In one embodiment, the level shifter includes a band gap reference.

Claims

1. A circuit implemented on a substrate having a voltage generated by a charge pump, said circuit comprising:

a current source providing a first current that is proportional to temperature; and

a level shifter coupled to said current source and said substrate, said level shifter providing

a first voltage that is shifted from said voltage of said substrate, wherein said level shifter comprises;

a first P-channel transistor coupled to said current source, said first P-channel transistor conducting a current substantially equal to said first current;

a first resistive device coupled to a drain of said first P-channel transistor; and

a first PNP transistor having a base and collector coupled to said substrate and an emitter coupled to said first resistive device.

2. The circuit of claim 1 wherein a voltage drop across said first resistive device and a base-to-emitter voltage of said first PNP transistor provides a voltage sum,

said first voltage and said voltage of said substrate have a voltage difference, and

the voltage sum is substantially equal to the voltage difference.

3. The circuit of claim 2 wherein said first voltage is substantially equal to ground potential.

4. The circuit of claim 1 wherein said current source comprises:

P-channel current mirror for conducting a second current, the second current being substantially equal to the first current;

a N-channel current mirror for conducting said second current from said P-channel current mirror;

a second PNP transistor having a collector coupled to said substrate and a base coupled to a source of a second voltage;

a second resistive device coupled between said N-channel current mirror and an emitter of said second PNP transistor; and

a third PNP transistor having a collector coupled to said substrate, a base coupled to said source of said second voltage, and an emitter coupled to said N-channel current mirror.

5. The circuit of claim 4 wherein said second voltage is substantially equal to ground potential.

6. The circuit of claim 4 wherein said first, second, and third PNP transistors are vertical parasitic PNP transistors.

7. The circuit of claim 6 wherein said N-channel current mirror comprises:

a first N-channel transistor having a source coupled to said emitter of said third PNP transistor; and

a second N-channel transistor having a source coupled to said second resistive device, said second resistive device being coupled in series between said source of said second N-channel transistor and said emitter of said second PNP transistor.

8. The circuit of claim 1 wherein said emitter of said first PNP transistor is formed from a source p+ diffusion, said base of said first PNP transistor is formed from a n-well and said collector of said first PNP transistor is formed from said substrate.

9. A method for maintaining a voltage of a substrate at a predetermined level, said method comprising the steps of:

providing a first voltage that is substantially equal to a sum of a base-to-emitter voltage of a transistor and a product of a thermal voltage and a constant, wherein said constant is a product of a ratio of resistances and a natural logarithm of a ratio of emitter areas;

applying said first voltage between said substrate and a first node; and

varying a charge in said substrate to maintain a voltage of said first node at a second voltage, wherein the voltage of said substrate is maintained at said predetermined level.

10. The method of claim 9 wherein said step of providing comprises the step of varying a resistance ratio, wherein a change in said resistance ratio causes a proportional change in said constant.

11. The method of claim 9 wherein said step of providing comprises the step of varying an emitter area ratio.

12. A structure for maintaining a voltage of a substrate at a predetermined level, said structure comprising:

means for providing and applying a first voltage that is substantially equal to a sum of a base-emitter voltage of a transistor and a product of a thermal voltage and a constant, wherein said constant is a product of a ratio of resistances and a natural logarithm of a ratio of emitter areas;

said first voltage being applied between said substrate and a first node; and

means for varying a charge in said substrate to maintain a voltage of said first node at a second voltage, wherein the voltage of said substrate is maintained at said predetermined level.

13. The structure of claim 12 wherein said means for providing comprises means for varying a resistance ratio, wherein a change in said resistance ratio causes a proportional change in said constant.

14. The structure of claim 13 wherein said means for providing comprises means for varying an emitter area ratio.

15. The structure of claim 12 wherein said means for varying comprises:

means for comparing said second voltage to said voltage of said first node;

means for generating a first signal when said voltage of said first node is more positive than said second voltage.

16. The structure of claim 15 wherein said means for varying further comprises means for pumping negative charge into said substrate.

17. The structure of claim 16 wherein said means for pumping comprises:

means for providing an oscillating signal; and

means for gating said oscillating signal to a capacitive charge pump.

18. The structure of claim 17 wherein said means for gating comprises:

means for receiving said first signal on a first input lead of an AND gate; and

means for receiving said oscillating signal on a second input lead of said AND gate.

19. A system for maintaining a voltage of a substrate at a predetermined voltage, said system comprising:

an oscillator;

a gating circuit having an input lead coupled to an output lead of said oscillator;

a pump circuit having an input lead coupled to an output lead of said gating circuit and an output lead coupled to said substrate;

a level shifter coupled between said substrate and a node; and

a comparing circuit having a first input lead coupled to said node, a second input lead coupled to a voltage source and an output lead coupled to a control lead of said gating circuit;

wherein said oscillator is a voltage-controlled oscillator and said comparing circuit is an amplifier, said voltage-controlled oscillator having an input lead coupled to an output lead of said amplifier.