Spatial light modulator with buried passive charge storage cell array

• US 5,671,083 A
• Filed: 02/02/1995
• Issued: 09/23/1997
• Est. Priority Date: 02/02/1995
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Overlaur, Mike, Conner, James L., Bhuva, Rohit L.
• Primary Examiner(s): Epps, Georgia Y.
• Assistant Examiner(s): Robbins, Thomas
• Application Number:
  US08/382,566
• Time in Patent Office: 964 Days
• Field of Search: 359/291
• US Class Current: 359/291
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means

Abstract

A monolithic DMD spatial light modulator (20) including a storage cell array (24) of charge storage elements (30). Each charge storage cell (30) is formed using robust MOS processes, and comprises a pair of capacitors (32) having a polysilicon electrode fabricated over a substrate, and separated by a thin oxide dielectric. Each capacitor (32) is shielded by several light impermeable metal shields (37, 64, 66, 68, 72, 74, 80, 82, 88) to prevent discharging due to light incident to SLM (20). The substrate electrode (38) is encompassed by an n+ doped region (42) providing a source of minority carriers to an inversion region under the polysilicon electrode (50).

Claims

1. A monolithic spatial light modulator, comprising;

a) a plurality of pixels; and

b) control means connected to said pixels for controlling said pixels including an array of charge storage cells positioned under said pixels, each said charge storage cell comprising a multi-layered semiconductor structure including a substrate forming a capacitor with one electrode being said substrate.

2. The spatial light modulator as specified in claim 1 wherein said capacitors underlie at least one light impermeable layer.

3. The spatial light modulator as specified in claim 2 wherein said light impermeable layer comprises metal.

4. The spatial light modulator as specified in claim 2 wherein each said charge storage cell underlies a plurality of said light impermeable layers.

5. The spatial light modulator as specified in claim 2 further comprising a data bus, and said charge storage cell further comprising a pass gate coupled between said capacitor and said data bus.

6. The spatial light modulator as specified in claim 2 wherein said semi conductor structure includes a pair of data buses, a pair of pass gates and a pair of said capacitors, each said pass gate being coupled between one said data bus and one said capacitor.

7. The spatial light modulator as specified in claim 2 wherein said capacitor comprises one electrode being said substrate of said semiconductor structure, and another electrode comprised of metal.

8. The spatial light modulator as specified in claim 1 wherein said capacitor comprises one electrode being said substrate of said semiconductor structure, and another electrode extending thereover comprised of polysilicon.

9. The spatial light modulator as specified in claim 8 wherein said polysilicon electrode overlaps said substrate electrode, and is separated therefrom by a thin dielectric oxide layer.

10. The spatial light modulator as specified in claim 8 wherein said substrate electrode is encompassed by a complimentary doped region.

11. The spatial light modulator as specified in claim 10 wherein said substrate is of p-type, and said complimentary doped region is n+ doped.

12. The spatial light modulator as specified in claim 1 wherein said pixels each comprise a deflectable mirror, and said control means includes an address electrode coupled to one said charge storage cell.

13. The spatial light modulator as specified in claim 12 wherein said address electrode is positioned over one said charge storage cell.

14. The spatial light modulator as specified in claim 13 wherein said address electrode is electrically coupled to said capacitor.

15. The spatial light modulator as specified in claim 1 wherein each said pixel is associated with one said charge storage cell.

16. The spatial light modulator as specified in claim 1 wherein one said charge storage cell is associated with a plurality of pixels.